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Temperature dependence of barrier height inhomogeneity in β-Ga2O3 Schottky barrier diodes
Journal of Vacuum Science & Technology B, 2021From an analysis of Pd contact Schottky diodes fabricated on (100) β-Ga2O3 wafers, in combination with data extracted from published work, we show that the barrier height inhomogeneity commonly observed in β-Ga2O3 Schottky diodes has a strong correlation
Aakash Jadhav +5 more
semanticscholar +1 more source
, 2021
The development of the novel three-terminal hybrid lateral memristor and transistor device called memtransistor, has successfully provided additional functionalities in memory devices. However, their high operating voltage is critical. In this report, we
Shania Rehman +5 more
semanticscholar +1 more source
The development of the novel three-terminal hybrid lateral memristor and transistor device called memtransistor, has successfully provided additional functionalities in memory devices. However, their high operating voltage is critical. In this report, we
Shania Rehman +5 more
semanticscholar +1 more source
Modeling and analysis of the effects of barrier height on automobiles emission dispersion
, 2021In this paper, a mathematical model has been developed that describes the characteristics of fluid flow and dispersion of pollutants in a certain quarter of Almaty city, Kazakhstan.
A. Issakhov, P. Omarova
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Barrier height enhancement of triangular barrier diodes
Journal of Applied Physics, 1986A modified model of a triangular barrier diode has been proposed and analyzed by considering the effect of low to moderate p-type doping in the two intrinsic regions. The presence of such acceptor impurities is shown to increase the effective barrier height. The functional dependence of barrier height, saturation current, and ideality factor on various
R. S. Gupta +2 more
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Schottky-barrier devices with low barrier height
Proceedings of the IEEE, 1974It is calculated that the barrier height of the Schottky diode has an optimum value of ∼0.3 V for the detector, the harmonic generator, and the frequency converter at high frequency. The low barrier height can be realized by the mixed crystal (n-type) composed of InAs (i.e., In x Ga 1-x As,InAs y P 1-y , and In x Ga 1-x As y P 1-y ).
K. Kajiyama, S. Sakata, Y. Mizushima
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ACS Nano, 2018
The difficulty in Schottky barrier height (SBH) control arising from Fermi-level pinning (FLP) at electrical contacts is a bottleneck in designing high-performance nanoscale electronics and optoelectronics based on molybdenum disulfide (MoS2).
Gwang-Sik Kim +5 more
semanticscholar +1 more source
The difficulty in Schottky barrier height (SBH) control arising from Fermi-level pinning (FLP) at electrical contacts is a bottleneck in designing high-performance nanoscale electronics and optoelectronics based on molybdenum disulfide (MoS2).
Gwang-Sik Kim +5 more
semanticscholar +1 more source
Advances in Materials, 2018
2D transition metal dichalcogenides (TMDCs) have emerged as promising candidates for post‐silicon nanoelectronics owing to their unique and outstanding semiconducting properties. However, contact engineering for these materials to create high‐performance
Sang‐Soo Chee +9 more
semanticscholar +1 more source
2D transition metal dichalcogenides (TMDCs) have emerged as promising candidates for post‐silicon nanoelectronics owing to their unique and outstanding semiconducting properties. However, contact engineering for these materials to create high‐performance
Sang‐Soo Chee +9 more
semanticscholar +1 more source
Adjustment methods of Schottky barrier height in one- and two-dimensional semiconductor devices.
Science BulletinThe Schottky contact which is a crucial interface between semiconductors and metals is becoming increasingly significant in nano-semiconductor devices.
Jianping Meng, Chengkuo Lee, Zhou Li
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