Results 161 to 170 of about 3,360,387 (243)

Barrier-Free Electronic Height Instrument

2011 International Conference on Future Computer Science and Education, 2011
In order to give the testers a barrier-free environment and to encourage the use of run-up in the height test, we combine the mechanical rotating feeler with the electronic display, achieving a high degree of accurate measurement of touch. The height instrument introduced in this paper adopts ATMEGA16 AVR as the microcontroller to collect and process ...
Hu Pu, Zheng Weitao, Wang Ji'an, He Haifeng, Ma Yong, Shi Qing, Han Jiurui, Huang Qiang, Zhang Teng, Han Rui   +9 more
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Optimum barrier height for Schottky-barrier detectors

Journal of Physics D: Applied Physics, 1982
Performance characteristics of Schottky-barrier detectors are investigated in terms of their physical parameters. It is shown that the detector cut-off frequency and responsivity-bandwidth product can be maximised while the level of minimum detectable power can be minimised by the proper choice of detector parameters.
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CESIUM-GaAs SCHOTTKY BARRIER HEIGHT

Applied Physics Letters, 1967
The Schottky barrier height at the interface of cesium metal and vacuum-cleaved p-type GaAs has been found to be 0.63 ± 0.03 eV. These measurements were made photovoltaically at 80°K and indicate that a heavy coverage of cesium leaves the surface roughly intrinsic.
John J. Uebbing, Ronald L. Bell
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Barrier Height of Titanium Silicide Schottky Barrier Diodes

Japanese Journal of Applied Physics, 1986
Schottky barrier diodes were fabricated on n-type Si surfaces with high resistivity. Barriers were produced by TiSi or TiSi2. Barrier height and resistivity of titanium silicide were examined in relation to phase differences identified by X-ray diffraction analysis. Barrier height was found to be unaffected by silicide phase.
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Fluctuations in Schottky barrier heights

Journal of Applied Physics, 1984
A double Schottky barrier is often formed at the grain boundary in polycrystalline semiconductors. The barrier height is shown to fluctuate in value due to the random nature of the impurity positions. The magnitude of the fluctuations is 0.1 eV, and the fluctuations cause the barrier height measured by capacitance to differ from the one measured by ...
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Apparent Barrier Height and Barrier-Height Imaging of Surfaces

2000
Tunneling barrier height is one of the most fundamental parameters in STM. It is this barrier height that leads to the exponential gap dependence of the tunneling current and hence enables STM to probe surfaces with atomic resolution. In a simple one-dimensional model of electron tunneling in STM, the barrier height has a definite meaning and its ...
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Location of Energy Barriers. II. Correlation with Barrier Height

The Journal of Chemical Physics, 1969
In Paper I of this series a hypothetical potential-energy surface was used in order to examine the effect on the dynamics of exchange reactions A + BC→AB + C of moving the energy barrier from an “early” to a “late” position along the reaction coordinate (i.e., from the entry valley to the exit valley of the energy surface).
M. H. Mok, J. C. Polanyi
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Systematics of Spontaneous-Fission Barrier Heights

Acta Physica Hungarica A) Heavy Ion Physics, 2003
Heights of (static) spontaneous-fission barriers of heaviest nuclei are calculated within a macroscopic—microscopic approach. Even—even nuclei with proton numbers Z = 96–120 are considered.
Z. Patyk, I. Muntian, A. Sobiczewski
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Hopping conductivity with distributed energy-barrier heights

Physical Review B, 1993
An alternative expression for the temperature dependence of hopping conductivity is proposed. A conduction model is proposed based on a collection of many independent Arrhenius-type processes. The density in the material considered has a A-shaped distribution as a function of activation energy, for example Gaussian, isosceles, and scalene distributions.
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Schottky Barrier Height of Phosphidized InGaAs

Japanese Journal of Applied Physics, 1993
The Schottky barrier height of phosphidized InGaAs has been studied. The surface of InGaAs (In 53%) lattice-matched to InP is treated with gentle phosphine plasma. Schottky junctions are then formed on phosphidized InGaAs by evaporating various metals such as Au, Cu, Ti and Ag.
Takashi Sugino, Yoshifumi Sakamoto Yoshifumi Sakamoto, Junji Shirafuji Junji Shirafuji   +2 more
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