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Barrier height of Hf/GaAs diode
Journal of Applied Physics, 1975Schottky barrier heights of 0.72 V for Hf/n-GaAs and 0.68 V for Hf/p-GaAs are experimentally obtained. These values agree with the empirical rule. Existence of an interfacial insulating layer is suggested.
K. Kajiyama, S. Sakata, O. Ochi
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Barrier heights from optical torsional transitions
Chemical Physics, 1977Abstract Analytical expressions for the torsional transitions are given in this paper for one-top molecules in the high barrier case. These equations involve self-consistent harmonic torsional frequencies corrected with second-order perturbation theory and the parameter F used in the MW theory of torsion.
L. Piseri, G. Dellepiane, P. Bosi
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Barrier heights of GaN Schottky contacts
Applied Surface Science, 1997Abstract Silver and lead contacts prepared by evaporation onto clean n-GaN(0001) surfaces are rectifying. Their zero-bias barrier heights and ideality factors were determined from the current-voltage characteristics. The observed linear correlation between the barrier heights and the ideality factors is attributed to nonuniform distributions of ...
Thorsten U. Kampen, Winfried Mönch
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Schottky-barrier height of iridium silicide
Applied Physics Letters, 1978Iridium silicides have been prepared by annealing Ir films on (100) - and (111) -oriented Si from 300 to 500 °C. Phase identification was performed by both x-ray and electron diffractions, and Schottky-barrier height by current-voltage measurements. The silicide IrSi has been found to have a barrier height of 0.93 eV, which is the highest among all the
I. Ohdomari +4 more
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Barrier height tuning in Ti/4H-SiC Schottky diodes
, 2021G. Bellocchi +6 more
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PAIRING CORRELATIONS AND FISSION BARRIER HEIGHTS
International Journal of Modern Physics E, 2009The influence of a pairing strength proportional to the surface of the deformed nucleus, on the fission barrier heights evaluated within the macroscopic-microscopic model which does not contain the average pairing energy in its macroscopic part is investigated.
KRZYSZTOF POMORSKI, FEDIR IVANYUK
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Metal/n-GaP Schottky barrier heights
Solid-State Electronics, 1979Abstract A systematic study, which aims to extend the existing metal/n-Gap Schottky barrier height data, is made. Schottky diodes of various barriers, which included Pt/n-GaP, Au/n-GaP, Ni/n-GaP, Mo/n-Gap, Al/n-GaP, Cr/n-GaP, Ag/n-GaP and Cu/n-GaP, were fabricated and their I-V and C-V characteristics were measured.
Tan F. Lei, Chung L. Lee, Chun Y. Chang
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Barrier height and negative tunnel magnetoresistance
Solid State Communications, 2004Abstract Based on the free-electron approximation method proposed by Slonczewski, we substitute the finite magnetic zone by a semi-infinite magnet. On this basis, the relationship between the tunnel magnetoresistance (TMR) and the barrier height of magnetic tunnel junction (MTJ) is studied. We find the TMR at small bias is always positive for various
Xue-Fei Liang, Wei Yang
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Barrier height for cobalt on silicon
physica status solidi (a), 1982H. Nakashima, K. Hashimoto
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