Results 261 to 270 of about 145,393 (311)

Quantitative explanation of the Schottky barrier height

Physical Review B, 2021
Eight decades ago, Schottky proposed that the energy barrier at the metal-semiconductor interface, which now bears his name, should be compared with the difference of two surface quantities, the work function (WF) of the metal and the ionization potential of the semiconductor.
Raymond T. Tung, Leeor Kronik
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Measurement of the barrier height of a multiple quantum barrier (MQB)

IEEE Journal of Quantum Electronics, 1994
A method of using a light-emitting diode structure with two active regions to measure the excess barrier height induced by the inclusion of a multiple quantum barrier structure is outlined. For a multiple quantum barrier structure previously used in a visible laser device, the resultant increase in barrier height was found to be 26 meV.
J. Rennie, M. Okajima, K. Itaya, G. Hatakoshi   +3 more
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Apparent Barrier Height and Barrier-Height Imaging of Surfaces

2000
Tunneling barrier height is one of the most fundamental parameters in STM. It is this barrier height that leads to the exponential gap dependence of the tunneling current and hence enables STM to probe surfaces with atomic resolution. In a simple one-dimensional model of electron tunneling in STM, the barrier height has a definite meaning and its ...
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Location of Energy Barriers. II. Correlation with Barrier Height

The Journal of Chemical Physics, 1969
In Paper I of this series a hypothetical potential-energy surface was used in order to examine the effect on the dynamics of exchange reactions A + BC→AB + C of moving the energy barrier from an “early” to a “late” position along the reaction coordinate (i.e., from the entry valley to the exit valley of the energy surface).
M. H. Mok, J. C. Polanyi
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The height of the self-trapping barrier

Soviet Journal of Low Temperature Physics, 1977
In the case of a nonpolarization electron-phonon interaction, the transition to the self-trapped state involves overcoming a potential barrier. In the case of a strong electron-phonon interaction, the barrier lies in the macroscopic region, although the scale of the self-trapped states always is of the order of the lattice constant.
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Fluctuations in Schottky barrier heights

Journal of Applied Physics, 1984
A double Schottky barrier is often formed at the grain boundary in polycrystalline semiconductors. The barrier height is shown to fluctuate in value due to the random nature of the impurity positions. The magnitude of the fluctuations is 0.1 eV, and the fluctuations cause the barrier height measured by capacitance to differ from the one measured by ...
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Distribution of barrier heights in amorphous organic materials

Physical Review Letters, 1987
Etude theorique de la distribution des hauteurs de barrieres dans les systemes 2 niveaux par la technique spectrale «hole burning».
, Köhler, , Friedrich
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Barrier Height of Titanium Silicide Schottky Barrier Diodes

Japanese Journal of Applied Physics, 1986
Schottky barrier diodes were fabricated on n-type Si surfaces with high resistivity. Barriers were produced by TiSi or TiSi2. Barrier height and resistivity of titanium silicide were examined in relation to phase differences identified by X-ray diffraction analysis. Barrier height was found to be unaffected by silicide phase.
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Systematics of Spontaneous-Fission Barrier Heights

Acta Physica Hungarica A) Heavy Ion Physics, 2003
Heights of (static) spontaneous-fission barriers of heaviest nuclei are calculated within a macroscopic—microscopic approach. Even—even nuclei with proton numbers Z = 96–120 are considered.
Z. Patyk, I. Muntian, A. Sobiczewski
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The height of the barrier hindering rotation in nitrosodimethylamine

Il Nuovo Cimento, 1958
The height of the barrier hindering rotation in nitroso-dimethylamine has ben calculated by a simpe molecular orbital treatment, in itsn electrons approximation. Σ bond energies and non bonding-forces are also evaluated. Fair agreement with experimental results is obtained.
M. Simonetta, S. Carrà
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