Results 271 to 280 of about 145,393 (311)

Determination of Barrier Heights and offsets

2004
As in the bulk of semiconductors the current flow through space-charge regions of metal semiconductor contacts occurs via drift and diffusion. The semiconductors will be assumed to be doped non-degenerately n-type so that Maxwell-Boltzmann statistics applies. The temperature shall be chosen such that all donors are ionized, i.e., the semiconductors are
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The barrier height formation in ZnO varistors

Journal of the European Ceramic Society, 1995
Abstract The electrical characteristics of ZnO ceramic varistors are interpreted as being due to the existence of potential barriers at the grain boundaries. The two main models describing the origin of these barriers, surface states at the interface, and surface oxidation, are discussed in this work, where the microstructure and the electrical ...
P.Q. Mantas, J.L. Baptista
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Hopping conductivity with distributed energy-barrier heights

Physical Review B, 1993
An alternative expression for the temperature dependence of hopping conductivity is proposed. A conduction model is proposed based on a collection of many independent Arrhenius-type processes. The density in the material considered has a A-shaped distribution as a function of activation energy, for example Gaussian, isosceles, and scalene distributions.
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Calculated photocurrents and surface barrier heights

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1992
This article solves the equations that dictate band flattening due to photo-induced electron–hole pair generation in the depletion region of a semiconductor. The calculations show the influence of the barrier height, the optical properties of the substrate, and the minority carrier properties.
C. M. Aldao, A. Palermo, J. H. Weaver
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Barrier Height of Fe Contacts to Si

Physica Scripta, 1981
Measurements of electron and hole barriers of junctions between evaporated Fe films and Si both of p- and n-type are reported. From a study of the forward I-V characteristics, we obtain a value for the hole barrier of Bh ≈ 0.50 ± 0.03 eV using the p-type diodes and a value of Be ≈ 0.62 ± 0.03 eV using the n-type diodes.
M P Ali, P A Tove, L Stolt
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Barrier height for cobalt on silicon

physica status solidi (a), 1982
H. Nakashima, K. Hashimoto
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Ethnicity no barrier to career heights.

Nursing standard (Royal College of Nursing (Great Britain) : 1987), 2015
The newly appointed regional director for the RCN in the North West region of England, Estephanie Dunn, will provide support to nursing directors in trusts on special measures. She hopes employers will support BME nurses with leadership potential to 'navigate the system'.
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Capacitance and Barrier Height in Grain Boundaries

Journal of Applied Physics, 1959
It is shown that the capacitance of a grain boundary depends on the height of the potential barrier φ only if φ is smaller than 2kT ln (Nd/ni) (ev). For higher barrier potentials the capacitance is in good approximation a function of the bulk properties only. The capacitance as a function of applied bias and temperature (100–250°K) has been measured on
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Measuring barrier height

Nature Nanotechnology, 2014
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Fission Barrier Heights

1973
ROBERT VANDENBOSCH, JOHN R. HUIZENGA
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