Results 31 to 40 of about 3,360,387 (243)

Optimum Barrier Height for SiC Schottky Barrier Diode

open access: yesISRN Electronics, 2013
The study of barrier height control and optimization for Schottky barrier diode (SBD) from its physical parameters have been introduced using particle swarm optimization (PSO) algorithm. SBD is the rectifying barrier for electrical conduction across the metal semiconductor (MS) junction and, therefore, is of vital importance to the successful operation
Alaa El-Din Sayed Hafez   +1 more
openaire   +1 more source

Modulation of Schottky barrier height in graphene/MoS2/metal vertical heterostructure with large current ON–OFF ratio [PDF]

open access: yes, 2015
Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barrier.
Y. Sata   +7 more
semanticscholar   +1 more source

Macro-microscopic Calculation of Five-dimensional Potential Energy Surface for 234U Fission

open access: yesYuanzineng kexue jishu, 2022
A key question about the fission process of a heavy nucleus is to probe the nuclear potential energy landscape and its evolution from the single groundstate compound nucleus over the top of the fission barrier and further to the scission point, finally ...
ZHU Xin;WANG Zhiming;LUO Changkai;NI Lei;ZHONG Chunlai;FAN Tieshuan
doaj  

Enhancement of critical current density and vortex activation energy in proton-irradiated Co-doped BaFe2As2

open access: yes, 2012
The effect of proton irradiation in Ba(Fe0.93Co0.07)2As2 single crystals is reported. We analyze temperature dependence of current density and normalized flux relaxation rate in the framework of collective creep model.
Kitamura, Hisashi   +3 more
core   +1 more source

Modelling of Low-Voltage Varistors’ Responses under Slow-Front Overvoltages

open access: yesElectronic Materials, 2023
In this study, commercially low-voltage MOVs are exposed to switching surges to analyse and model the relationship between the number of surges and the MOV grain barrier height response.
Lutendo Muremi   +2 more
doaj   +1 more source

Heights of Nuclear Potential Barriers [PDF]

open access: yesNature, 1933
As a result of experimental work in the past few years on the artificial disintegration of light nuclei and the nuclear scattering of α-particles, we now have a means of estimating the heights of the potential walls surrounding these nuclei. I have collected the evidence from a variety of sources which can be summarised as below.
openaire   +1 more source

Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al2O3/Nb:SrTiO3

open access: yesAdvanced Electronic Materials, 2018
The rectification of the Pt/amorphous Al2O3 (a‐AO)/Nb‐doped SrTiO3 (NSTO) structure with excellent applicability as a selector for crossbar array resistive switching random access memory is introduced.
Taehwan Moon   +8 more
doaj   +1 more source

Free Energy Barrier for Electric Field Driven Polymer Entry into Nanoscale Channels

open access: yes, 2011
Free energy barrier for entry of a charged polymer into a nanoscale channel by a driving electric field is studied theoretically and using molecular dynamics simulations. Dependence of the barrier height on the polymer length, the driving field strength,
B. Hornblower   +2 more
core   +1 more source

Electronic properties of SnO2-based ceramics with double function of varistor and humidity sensor [PDF]

open access: yes, 2009
This is the post-print version of the article. The official published version can be obtained from the link below - Copyright @ 2010 AD-Tech.Tin dioxide based varistor ceramics SnO2-Co3O4-Nb2O5-Cr2O3-xCuO (x=0; 0.05; 0.1 and 0.5) were made and their ...
Bulpett, R   +5 more
core   +1 more source

Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

open access: yesCrystals, 2020
The diffusion welding (DW) is a comprehensive mechanism that can be extensively used to develop silicon carbide (SiC) Schottky rectifiers as a cheaper alternative to existing mainstream contact forming technologies.
Mehadi Hasan Ziko   +3 more
doaj   +1 more source

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