Results 151 to 160 of about 13,901 (202)
Some of the next articles are maybe not open access.
BiCMOS: technology and circuit design
Microelectronics Journal, 1989Abstract In this paper, the state-of-the-art of combined bipolar/CMOS (BiCMOS) technologies and circuit techniques is described. Examples of advanced BiCMOS technologies for various applications will be given, together with theoretical considerations which allow a comparison of the bipolar and MOS transistors.
Zimmer, Günter +5 more
openaire +1 more source
BiCMOS current source reference network for ULSI BiCMOS with ECL circuitry
IEEE International Solid-State Circuits Conference, 2003A BiCMOS current source reference network which eliminates the impact of DC power supply voltage drops on the operation of ECL (emitter coupled logic) circuits is described. This is essential for implementing ECL design techniques in ULSI BiCMOS circuits.
H.V. Tran, P.K. Fung, D.B. Scott
openaire +1 more source
1990
BiCMOS technology combines Bipolar and CMOS transistors in a single integrated circuit. By retaining the benefits of Bipolar and CMOS, BiCMOS is able to achieve VLSI circuits with speed-power-density performance previously unattainable with either technology individually.
openaire +1 more source
BiCMOS technology combines Bipolar and CMOS transistors in a single integrated circuit. By retaining the benefits of Bipolar and CMOS, BiCMOS is able to achieve VLSI circuits with speed-power-density performance previously unattainable with either technology individually.
openaire +1 more source
2009
Radiation detection has been increasingly developed in various fields of radioactivity control, medical imaging and space science. CMOS and BiCMOS technologies are chosen for the implementation of integrated front end systems due to their high integration density, relatively low power consumption, and capability to combine analog and digital circuits ...
openaire +1 more source
Radiation detection has been increasingly developed in various fields of radioactivity control, medical imaging and space science. CMOS and BiCMOS technologies are chosen for the implementation of integrated front end systems due to their high integration density, relatively low power consumption, and capability to combine analog and digital circuits ...
openaire +1 more source
1990
Over the past few years, memory performance has been the primary demonstration vehicle for BiCMOS technologies. Intrinsic gate delay, power dissipation and area have been regarded as the theoretical indications for technology performance and density. In a similar manner memory access time, memory power dissipation and memory size have been regarded as ...
H. V. Tran +3 more
openaire +1 more source
Over the past few years, memory performance has been the primary demonstration vehicle for BiCMOS technologies. Intrinsic gate delay, power dissipation and area have been regarded as the theoretical indications for technology performance and density. In a similar manner memory access time, memory power dissipation and memory size have been regarded as ...
H. V. Tran +3 more
openaire +1 more source
SiGe BiCMOS Technology Collaboration
New Electronics, 2021X-FAB and IHP have announced a major industry-academic partnership.
openaire +1 more source
1990
For high performance LSI and VLSI digital circuit applications, BiCMOS technology has become predominantly driven from a CMOS processing base. The principle reason for this is that LSI and VLSI digital BiCMOS circuits tend to be CMOS-intensive because of power dissipation limitations (for example, high density ECL I/O SRAMs and gate arrays).
R. A. Haken +3 more
openaire +1 more source
For high performance LSI and VLSI digital circuit applications, BiCMOS technology has become predominantly driven from a CMOS processing base. The principle reason for this is that LSI and VLSI digital BiCMOS circuits tend to be CMOS-intensive because of power dissipation limitations (for example, high density ECL I/O SRAMs and gate arrays).
R. A. Haken +3 more
openaire +1 more source
High performance BiCMOS technology
Proceedings of IEEE Custom Integrated Circuits Conference - CICC '93, 2002The authors describe the process integration issues of high-performance BiCMOS technologies intended to be used not only in high-density digital applications but also in high speed ECL (emitter coupled logic) and mixed analog/digital signal applications.
T.M. Liu, T.-Y. Chiu, R.G. Swartz
openaire +1 more source
BiCMOS submicron compiler memories
Third Annual IEEE Proceedings on ASIC Seminar and Exhibit, 2002An advanced submicron BiCMOS process and an ASIC memory compiler are discussed. The BICMOS process uses bipolar transistors to enhance the fast CMOS transistors by driving heavily loaded nodes at high speeds. The multiple layers of metal in the process significantly increase the gate density available for system-level design. >
J. Drummond, M. Lepkowski
openaire +1 more source
Schottky merged BiCMOS structures
IEEE Journal of Solid-State Circuits, 1994A new merged BiCMOS structure is presented. It incorporates a Schottky diode between the base and the collector of the n-p-n bipolar transistor. The structure offers the same reduced area advantage of merged over conventional BiCMOS, and is shown to have granted latchup immunity to BiCMOS circuits. The device simulations using HSPICE verify the latchup
S.S. Rofail, M.I. Elmasry
openaire +1 more source