Results 151 to 160 of about 5,679 (194)
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Fast Prototyping for BiCMOS Analog Integrated Circuits Design

1998
At University Bordeaux 1, analog integrated circuit electronics teaching adresses students from ‘IUP Genie Electrique et Informatique Industrielle’ second and third year, from Licence and Maitrise Electronique, Electrotechnique et Automatique (EEA) and from DESS Microelectronique (from Bachelors to Masters of Science).
J. Tomas   +3 more
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SiGe BiCMOS integrated circuits for high-speed serial communication links

IBM Journal of Research and Development, 2003
Considerable progress has been made in integrating multi-Gb/s functions into silicon chips for data- and telecommunication applications. This paper reviews the key requirements for implementing such functions in monolithic form and describes their implementation in the IBM SiGe BiCMOS technology.
D. J. Friedman   +11 more
openaire   +1 more source

Signal isolation in BiCMOS mixed mode integrated circuits

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting, 2002
Comparing several cross-talk reduction schemes using two-dimensional device simulation and measurements on silicon has shown that while SOI based processes provide high isolation from cross-talk, fully junction isolated wells can provide equal or better cross-talk immunity at a lesser expense.
openaire   +1 more source

Design Methodology for BiCMOS Millimeter-Wave Integrated Circuits

2018
The design of millimeter-wave circuits involves understanding and dealing with new challenges, which make every design step crucial for a successful design. For instance, the high frequency of operation makes almost every layout connection behave as a transmission line, and therefore, they need to be adequately modeled and sized.
David del Rio   +4 more
openaire   +1 more source

BiCMOS integrated circuit for capacitive pressure sensors in automotive applications

Sensors and Actuators A: Physical, 1993
Abstract A new integrated electronic circuit has been designed in cooperation with the most important French automotive industrial group which is working on the Prometheus programme. This circuit is connected to a differential capacitive pressure sensor which varies from 30 to 40 pF when pressure increases from 0 to 5 bars.
Ph. Dondon   +2 more
openaire   +1 more source

Substrate crosstalk in BiCMOS mixed mode integrated circuits

Solid-State Electronics, 1996
Abstract A comparison of several crosstalk reduction schemes using two-dimensional device simulation and measurements on silicon has shown that while SOI based processes provide high isolation from crosstalk, fully junction isolated wells can provide equal or better crosstalk immunity at a lesser expense.
openaire   +1 more source

A methodology for worst-case design of BiCMOS integrated circuits

Proceedings of the 1988 Bipolar Circuits and Technology Meeting,, 2003
A corners methodology for BiCMOS is derived using CMOS corners as the basis. Five corners for CMOS are proposed. Coupled to the four axis corners are two bipolar corners per CMOS corner. This implies that for BiCMOS there are a total of nine possible transistor corners that are superimposed on temperature, voltage, and resistor variation.
A.R. Alvarez   +3 more
openaire   +1 more source

BiCMOS amplifier–discriminator integrated circuit for gas-filled detector readout

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2005
The paper presents a 16-channel amplifier-discriminator designed in BiCMOS technology. It will be used for the binary parallel readout of gas-filled detectors being designed at the European Synchrotron Radiation Facility. The circuit (named AMS211) has been manufactured.
Herve, C.   +4 more
openaire   +2 more sources

Precision High-Frequency Continuous-Time Integrator Circuits in BiCMOS

1995
In Chapters 2 through 4, we have considered the broad technological and theoretical aspects of high-performance integrated continuous-time filter design. The theoretical limitations of wave filters and architectural considerations in their design were examined in Chapters 2 and 3 and the modified leapfrog filter topology was demonstrated to be apropos ...
Scott D. Willingham, Ken Martin
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Current sensing schemes for use in BiCMOS integrated circuits

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting, 2002
In integrated circuits it is often required to devise some scheme to measure or limit current in a power transistor. By using the properties of bipolar transistors several simple circuits can be manufactured that enable accurate sensing of transistor current without the usual bandwidth limitations.
openaire   +1 more source

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