Results 161 to 170 of about 5,679 (194)

Millimeter-wave integrated circuits for wireless transceivers in BiCMOS technologies

2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015
This invited paper provides an overview of important attributes of a BiCMOS process in designing high-performance mm-wave integrated circuits, and contends, through several design examples, that it is perhaps one of the best process technologies for wireless applications that seek both high level of integration and high performance.
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Circuit applications of high-performance SiGe:C HBTs integrated in BiCMOS technology

Applied Surface Science, 2004
Abstract Carbon-doped SiGe (SiGe:C) bipolar devices have been developed and integrated in to a 0.25 μm CMOS platform. The resulting SiGe:C BiCMOS technology offers a wide spectrum of active and passive devices for wireless and wired communication systems.
W Winkler, J Borngräber, B Heinemann, H Rücker, R Barth, J Bauer, D Bolze, J Drews, K.-E Ehwald, T Grabolla, U Haak, W Höppner, D Knoll, D Krüger, B Kuck, R Kurps, M Marschmeyer, H Richter, P Schley, D Schmidt, R Scholz, B Tillack, D Wolansky, H.-E Wulf, Y Yamamoto, P Zaumseil   +25 more
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Silicon Germanium BiCMOS Integrated Circuits for Scalable Cryogenic Sensing Applications

2022
This dissertation is focused on an investigation of BiCMOS cryogenic low noise amplifiers (LNAs) based on Silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) for simultaneous low noise and low power design and also taking advantage of CMOS circuitry for adding flexibility to the LNA design.
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STAIC: a synthesis tool for CMOS and BiCMOS analog integrated circuits

1991 IEEE International Symposium on Circuits and Systems (ISCAS), 1991
STAIC is an interactive design tool that synthesizes CMOS and BiCMOS analog integrated circuits which conform to specified performance constraints. STAIC features an input modeling language for entering hierarchical circuit descriptions and a symbolic/numeric solver unit for dynamic integration of analytical model equations across hierarchical ...
J.P. Harvey, M.I. Elmasry, B. Leung
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Silicon-based optical receivers in BiCMOS technology for advanced optoelectronic integrated circuits

Materials Science in Semiconductor Processing, 2000
Abstract A double photodiode (DPD) and a phototransistor were implemented in an industrial 0.8 μm bipolar complementary metal oxide semiconductor (BiCMOS) n-well process. Both devices are 100% BiCMOS compatible, so that no process modifications were necessary. A −3 dB bandwidth of more than 200 MHz was measured for the DPD. The rise
K Kieschnick, H Zimmermann, P Seegebrecht   +2 more
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SiGe BiCMOS integrated circuits for optical communication transmitters

2019
Telecommunications play a crucial role in our daily lives, not only because of their significance in allowing interaction between all of us, but also due to the forthcoming expansion of connection and exchange of data between machines, the so-called Internet of Things (IoT), which will result in a massive network of thousands of millions of devices ...
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BiCMOS-Integrated Circuits for Millimeter-Wave Wireless Backhaul Transmitters

2022
Andrea Mazzanti, Lorenzo Iotti, Mahmoud Mahdipour Pirbazari, Farshad Piri, Elham Rahimi, Francesco Svelto   +5 more
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Digital BiCMOS Integrated Circuit Design

Microprocessors and Microsystems, 1994
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Book Review: Digital BiCMOS Integrated Circuit Design:

International Journal of Electrical Engineering & Education, 1995
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Guest Editorial IEEE 2022 BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium

IEEE Journal of Solid-State Circuits, 2023
yuriy Greshishchev
exaly