Results 31 to 40 of about 87,187 (276)

Fabrication of TiO2 nanotubes on Ti spheres using bipolar electrochemistry

open access: yesElectrochemistry Communications, 2020
In this work, the anodization of Ti spheres using bipolar electrochemistry is reported for the first time. TiO2 nanotubes were found over the entire surface area of the Ti spheres when a square-wave potential was employed.
Hanna Sopha   +3 more
doaj   +1 more source

Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed

open access: yesMicromachines
A SiC double-trench MOSFET embedded with a lower-barrier diode and an L-shaped gate-source in the gate trench, showing improved reverse conduction and an improved switching performance, was proposed and studied with 2-D simulations.
Yangjie Ou   +3 more
doaj   +1 more source

A thermal network model considering thermal coupling effect and TIM degradation in IGBT modules

open access: yesEnergy Reports, 2023
Thermal interface materials (TIMs), as important materials for heat dissipation of insulated gate bipolar transistor (IGBT) modules, degrade under long-term thermal cycling, resulting in elevated junction temperatures and threatening the safe operation ...
Xiaotong Zhang   +5 more
doaj   +1 more source

Are spin junction transistors suitable for signal processing? [PDF]

open access: yes, 2004
A number of spintronic junction transistors, that exploit the spin degree of freedom of an electron in addition to the charge degree of freedom, have been proposed to provide simultaneous non-volatile storage and signal processing functionality. Here, we
M. Cahay   +3 more
core   +3 more sources

Overview of monitoring methods of press‐pack insulated gate bipolar transistor modules under different package failure modes

open access: yesIET Power Electronics, 2023
Press‐pack insulated gate bipolar transistor modules (PP‐IGBTs) have been widely used in high‐voltage and high‐power‐density applications, such as high‐voltage direct‐current (HVDC) converters, because of their advantages of low thermal resistance ...
Renkuan Liu   +5 more
doaj   +1 more source

Probabilistic Monte-Carlo method for modelling and prediction of electronics component life [PDF]

open access: yes, 2014
Power electronics are widely used in electric vehicles, railway locomotive and new generation aircrafts. Reliability of these components directly affect the reliability and performance of these vehicular platforms.
Alghassi, Ali   +3 more
core   +1 more source

Survivin and Aurora Kinase A control cell fate decisions during mitosis

open access: yesMolecular Oncology, EarlyView.
Aurora A interacts with survivin during mitosis and regulates its centromeric role. Loss of Aurora A activity mislocalises survivin, the CPC and BubR1, leading to disruption of the spindle checkpoint and triggering premature mitotic exit, which we refer to as ‘mitotic slippage’.
Hana Abdelkabir   +2 more
wiley   +1 more source

An Improved SiC MOSFET With Integrated Schottky Contact Super Barrier Rectifier

open access: yesIEEE Access
This study focuses on the SiC MOSFET with integrated Schottky contact super barrier rectifier (SiC SSBR-MOSFET) through the application of TCAD simulation methodologies.
Xintian Zhou   +7 more
doaj   +1 more source

Valproic acid causes proteasomal degradation of DICER and influences miRNA expression. [PDF]

open access: yesPLoS ONE, 2013
Valproic acid (VPA) is a commonly used drug to treat epilepsy and bipolar disorders. Known properties of VPA are inhibitions of histone deacetylases and activation of extracellular signal regulated kinases (ERK), which cannot fully explain VPA's clinical
Zhaiyi Zhang   +7 more
doaj   +1 more source

Ferrocene Derivatives Enable Ultrasensitive Perovskite Photodetectors with Enhanced Reverse Bias Stability

open access: yesAdvanced Functional Materials, EarlyView.
Novel ferrocene derivatives (e.g., FcPhc2) are used as an ultrathin layer hole‐blocking layer, reducing hole injection from the Ag contact. This results in an ultralow noise spectral density of 1.2 × 10−14 A Hz−1/2, and a high specific detectivity of 8.1 × 1012 Jones at −0.5 V.
Eunyoung Hong   +16 more
wiley   +1 more source

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