Results 11 to 20 of about 39,927 (260)
Modeling power amplifiers in the Microwave Office environment [PDF]
Известия Саратовского университета. Новая серия: Физика, 2021 Background and Objectives: A very difficult and urgent task is to obtain high output powers of transistor amplifiers. This class of devices in many radio engineering systems determines the most important technical parameters of the system, such as ...
Khvalin, Alexander Lvovich +1 more
doaj +1 more source
Вестник Дагестанского государственного технического университета: Технические науки, 2016 Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods.
T. A. Ismailov +2 more
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Magnetic bipolar transistor based on ZnO/NiO/Si heterostructure using pulsed laser deposition
AIP Advances, 2020 Oxide semiconductors are promising candidates for next generation electronics. In this work, magnetic bipolar transistor was fabricated by growing thin films of p-NiO and n-ZnO on n-type silicon wafer by pulsed laser deposition technique with an in-situ ...
Harsimrat Kaur +4 more
doaj +1 more source
Numerical Simulation Analysis on a Composite Edge Terminal Reverse Blocking IGBT
Zhongguo dianli, 2022 Insulated gate bipolar transistor (IGBT) is usually used in combination with power diode in power electric circuit because it has no reverse blocking ability.
Lei CUI +4 more
doaj +1 more source
Investigation of impact of the gate circuitry on IGBT transistor dynamic parameters
Mokslas: Lietuvos Ateitis, 2010 The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated.
Vytautas Bleizgys, Andrius Platakis
doaj +1 more source
Research progress of THz solid state amplifier
Dianzi Jishu Yingyong, 2019 With the development of semiconductor technology, characteristic frequency of transistors have been improving so far and into THz frequency range, which makes it possible for solid state devices to work in THz frequency range.
Guo Fangjin +5 more
doaj +1 more source
Ballistic two-dimensional lateral heterojunction bipolar transistor
Physical Review Research, 2021 We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides.
Leonardo Lucchesi +3 more
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Direct measurement of the carrier leakage in an InGaAsP/InP laser [PDF]
, 1983 Carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser-bipolar-transistor structure.
Chen, T. R. +6 more
core +1 more source
High Speed Non-Linear Circuit Simulation of Bipolar Junction Transistors
Active and Passive Electronic Components, 1999 This paper presents HIBTRA (High Speed Bipolar Transistor Analysis), a high speed non-linear bipolar transistor circuit simulation package. The paper discusses about the modelling of Bipolar Junction Transistor operated at high speed in the sinusoidal ...
M. N. Doja, Moinuddin, Umesh Kumar
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Turn-on speed of grounded gate NMOS ESD protection transistors [PDF]
, 1996 The turn-on speed of nMOS transistors (nMOST) is of paramount importance for robust Charged Device Model (CDM) protection circuitry. In this paper the nMOST turn-on time has been measured for the first time in the sub-halve nanosecond range with a ...
Kuper, F.G. +3 more
core +15 more sources