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Ion bipolar junction transistors [PDF]
Proceedings of the National Academy of Sciences, 2010 Dynamic control of chemical microenvironments is essential for continued development in numerous fields of life sciences. Such control could be achieved with active chemical circuits for delivery of ions and biomolecules. As the basis for such circuitry, we report a solid-state ion bipolar junction transistor (IBJT) based on conducting polymers and ...
Tybrandt, Klas +3 more
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IEEE Journal of the Electron Devices Society, 2020 In this article, a novel bipolar-field-effect composite power transistor, called SiC GCBT (Silicon Carbide Gate-Controlled Bipolar-field-effect Composite Transistor) is presented and studied.
Yipan Zhang, Baoxing Duan, Yintang Yang
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IEEE Journal of the Electron Devices Society, 2021 4H-SiC is a wide-bandgap material that exhibits excellent high-temperature conductivity and high operating voltage. These characteristics can provide high electrostatic discharge (ESD) robustness in high voltage applications. However, a considerably wide
Kyoung-Il Do +3 more
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Journal of Engineering, 2021 The research aims to design a narrow-band frequency drive amplifier (1.5GHz -1.6GHz), which is used to boost the transmitter amplifier's input signal or amplify the GPS, GlONASS signals at the L1 band.
ABDO zouhair Ballouk +2 more
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International Journal of Advances in Telecommunications, Electrotechnics, Signals and Systems, 2012 This paper presents a new active building block (ABB) called voltage gain-controlled modified current feedback amplifier (VGC-MCFOA) based on bipolar junction transistor technology.
Norbert Herencsar +4 more
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Graded collector heterojunction bipolar transistor [PDF]
, 1984 A graded collector heterojunction bipolar transistor is proposed. The graded collector improves device speed performance at high current densities by reducing the influence of the Kirk ...
Chiu, L. C. +3 more
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Investigating student understanding of bipolar junction transistor circuits
Physical Review Physics Education Research, 2018 The research reported in this article represents a systematic, multiyear investigation of student understanding of the behavior of bipolar junction transistor circuits using a variety of different tasks to isolate and probe key aspects of transistor ...
Kevin L. Van De Bogart +1 more
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Приборы и методы измерений, 2019 Controlling of parameters of manufactured transistors and interoperational controlling during their production are necessary conditions for production of competitive products of electronic industry.
N. I. Gorbachuk +3 more
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DEVELOPMENT OF CONTROLLED RECTIFIERS BASED ON THE BIPOLAR WITH STATIC INDUCTION TRANSISTORS (BSIT)
Вестник Дагестанского государственного технического университета: Технические науки, 2016 Aim. The aim of this study is to develop one of the most perspective semiconductor device suitable for creation and improvement of controlled rectifiers, bipolar static induction transistor.Methods.
F. I. Bukashev, A. R. Shakhmaeva
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Silicon-based distributed voltage-controlled oscillators [PDF]
, 2001 Distributed voltage-controlled oscillators (DVCOs) are presented as a new approach to the design of silicon VCOs at microwave frequencies. In this paper, the operation of distributed oscillators is analyzed and the general oscillation condition is ...
Hajimiri, Ali, Wu, Hui
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