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Output performance of Bi-Sb-Te based thermoelectric-transistor model on parallel temperature gradient. [PDF]
Sci RepGuo T +6 more
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A Suspended Graphene Field-Effect Transistor for Ultra-Sensitive and Label-Free Detection of Cancer Biomarker miR-21. [PDF]
Biosensors (Basel)Deng Z, Zeng C, Wu Q, Zhang F, Zhuang P.
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Optically Pumped Bipolar Transistor
Russian Microelectronics, 2023The properties of a bipolar npn transistor were studied when exposed to unmodulated incoherent radiation created by a “white” LED. The static and dynamic characteristics of the transistor were measured at various exposure intensities. It is shown that the change in the characteristics of the transistor under optical influence is due to an increase in ...
Yu. K. Altudov +3 more
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1993
The first germanium alloy bipolar junction transistor (BJT) was invented by Bardeen, Brattain, and Shockley in 1948. The bipolar junction transistor is considered to be one of the most important electronic components used in integrated circuits (ICs) for computers, communications and power systems, and in many other digital and analog electronic ...
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The first germanium alloy bipolar junction transistor (BJT) was invented by Bardeen, Brattain, and Shockley in 1948. The bipolar junction transistor is considered to be one of the most important electronic components used in integrated circuits (ICs) for computers, communications and power systems, and in many other digital and analog electronic ...
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Heterojunction Bipolar Transistors
2004Heterojunction Bipolar Transistors (HBTs) are an advanced development of the Bipolar Junction Transistors (BJTs). The basic principles of operation of bipolar transistors are explained in detail elsewhere, e.g. in [305, 496, 570].
Vassil Palankovski, Rüdiger Quay
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2020
The bipolar junction transistor or BJT is a device capable of amplifying a voltage or current, something that diodes are not able to do. This amplifying characteristic makes the BJT suitable for a wide range of applications. The device was invented in 1947 by Walter H.
Stephan J. G. Gift, Brent Maundy
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The bipolar junction transistor or BJT is a device capable of amplifying a voltage or current, something that diodes are not able to do. This amplifying characteristic makes the BJT suitable for a wide range of applications. The device was invented in 1947 by Walter H.
Stephan J. G. Gift, Brent Maundy
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2020
The bipolar junction transistor, or BJT, is a three-lead device made by stacking three layers of doped semiconductor material with alternating p- and n-doping. Hence, there are NPN or PNP type transistors. While the details of the electronic behavior of these transistors differs from that seen for the FET, the general approach for circuit analysis ...
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The bipolar junction transistor, or BJT, is a three-lead device made by stacking three layers of doped semiconductor material with alternating p- and n-doping. Hence, there are NPN or PNP type transistors. While the details of the electronic behavior of these transistors differs from that seen for the FET, the general approach for circuit analysis ...
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Heterostructure Bipolar Transistors
1993Heterojunctions make it possible to obtain a qualitative improvement in the operating speed of bipolar transistors.
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2000
Abstract In Chapter 12 the p-n junction and the metal-semiconductor junction were discussed. These devices are two-terminal devices which are useful as rectifiers, but cannot be used as amplifiers because they contain no mechanism for modulating the electric current in such a way as to produce gain.
M Balkanski, R F Wallis
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Abstract In Chapter 12 the p-n junction and the metal-semiconductor junction were discussed. These devices are two-terminal devices which are useful as rectifiers, but cannot be used as amplifiers because they contain no mechanism for modulating the electric current in such a way as to produce gain.
M Balkanski, R F Wallis
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1994
ALTHOUGH in principle consisting merely of two p-n junction diodes back to back, in practice the bipolar junction transistor (BJT) is a completely different class of device; whereas the diode is a passive device, the transistor is active — it can be used to amplify voltages (signals).
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ALTHOUGH in principle consisting merely of two p-n junction diodes back to back, in practice the bipolar junction transistor (BJT) is a completely different class of device; whereas the diode is a passive device, the transistor is active — it can be used to amplify voltages (signals).
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