Results 71 to 80 of about 2,489 (207)

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Demonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector Regions

IEEE Journal of the Electron Devices Society, 2018
Symmetric lateral NPN bipolar junction transistors on Si-on-insulator having epitaxially grown emitter/collector regions are demonstrated, for the first time.
Pouya Hashemi, Jeng-Bang Yau, Kevin K. Chan, Tak H. Ning, Ghavam G. Shahidi   +4 more
doaj   +1 more source

Non‐volatile Sliding Ferroelectric Memory Effect in Ultrathin γ‐InSe

Advanced Electronic Materials, EarlyView.
Room‐temperature sliding ferroelectricity in γ‐InSe enables a two‐dimensional FeFET with a 6.8 V memory window, above 104 conductance modulation, longer than 10‐years retention and above 103 cycles fatigue resistance. An ultrathin (4.8 nm) γ‐InSe ferroelectric tunnel junction exhibits reversible high/low resistance switching with TER of 105 at room ...
Yue Li, Luoyang Ding, Zhixiong Li, Feng Chen, Xiaoyao Weng, Min Zhu, Siyuan Wan, Yangbo Zhou   +7 more
wiley   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source

Investigation of Analog Memristor Characteristics for Hardware Synaptic Weight in Multilayer Neural Network

Advanced Intelligent Systems, Volume 7, Issue 3, March 2025.
The systematic design of memristor‐based neural network is provided by analog conductance state parameters to accurately emulate the software‐based high‐resolution weight at discrete device level. The requirement of discrete analog conductance of memristor device is measured as ≈50 states with nonlinearity value of ≈0.142 within the deviation range of ...
Jingon Jang, Yoonseok Song, Sungjun Park
wiley   +1 more source

On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors

IEEE Journal of the Electron Devices Society, 2014
The SOI symmetric lateral bipolar transistor is uniquely suitable for operation at high injection currents where the injected minority carrier density in the base region is larger than the base doping concentration.
Jin Cai, Tak H. Ning, Christopher P. D'Emic, Jeng-Bang Yau, Kevin K. Chan, Joonah Yoon, Ramachandran Muralidhar, Dae-Gyu Park   +7 more
doaj   +1 more source

Nonplanar Atomic Layer Deposition (ALD)‐Niobium Oxide (NbOx) Neurons for Oscillatory Neural Network Applications

Advanced Intelligent Systems, EarlyView.
This article presents a nonplanar niobium oxide (NbOx) neuron device fabricated using an atomic layer deposition (ALD) method for use in oscillatory neural networks (ONNs). Potentially, such nonplanar geometry allows for high‐density arrays. The desired threshold switching (TS) characteristics are achieved through an interfacial method using a thin ...
Jaehyun Moon, Kitae Kim, Jihyun Kim, Soohyung Park, Yeonjin Yi, Jiyong Woo, Seung‐Youl Kang   +6 more
wiley   +1 more source

A Flexible and Energy‐Efficient Compute‐in‐Memory Accelerator for Kolmogorov–Arnold Networks

Advanced Intelligent Systems, EarlyView.
This article presents KA‐CIM, a compute‐in‐memory accelerator for Kolmogorov–Arnold Networks (KANs). It enables flexible and efficient computation of arbitrary nonlinear functions through cross‐layer co‐optimization from algorithm to device. KA‐CIM surpasses CPU, ASIC, VMM‐CIM, and prior KAN accelerators by 1–3 orders of magnitude in energy‐delay ...
Chirag Sudarshan, Oliver Artner, Paul‐Philipp Manea, Sebastian Siegel, Susanne Hoffmann‐Eifert, Regina Dittmann, John Paul Strachan   +6 more
wiley   +1 more source

Optimization of Energy Efficiency in Photovoltaic Water Pumping Systems Using Neural Networks

Energy Science &Engineering, EarlyView.
This study investigates an optimal control strategy for a photovoltaic (PV) water pumping system aimed at improving efficiency and autonomy in off‐grid applications. The system uses an induction motor with direct torque control and compares three maximum power point tracking (MPPT) techniques: neural network–based MPPT, Incremental Conductance (IC ...
Sihem Ghoudelbourk, Habib Benbouhenni, Z. M. S. Elbarbary, Mohamed Benidir   +3 more
wiley   +1 more source

GA-LSTM-Based Degradation Prediction for IGBTs in Power Electronic Systems

Energies
The reliability and lifetime of insulated gate bipolar transistors (IGBTs) are critical to ensuring the stability and safety of power electronic systems.
Yunfeng Qiu, Zehong Li, Shan Tian
doaj   +1 more source