Results 141 to 150 of about 1,893,473 (266)

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source

System-level FPGA validation of a trainable and robust multiplier-free spiking neural network. [PDF]

iScience
Li Q, Zhang L.
europepmc   +1 more source

Atomic Scale Control of Thermal Conductivity in LaMnO3/SrMnO3 Superlattices

Advanced Electronic Materials, EarlyView.
Interface‐dominated cross‐plane thermal transport in [(LaMnO3)m/(SrMnO3)n]10 superlattices can be controlled by the octahedral rotation/tilt angle φOOR of the MnO6 octahedra, which as well is controlled by the “m/n” ratio. ABSTRACT We report atomic scale structure and phonon thermal transport in (LaMnO3)m/(SrMnO3)n/SrTiO3(100) superlattices (LMO/SMO ...
H. Ulrichs, V. Roddatis, U. Roß, J. P. Bange, D. Meyer, S. Lopatin, V. Radisch, D. Metternich, I. V. Maznichenko, S. Ostanin, R. Egoavil, I. Lazić, V. Moshnyaga   +12 more
wiley   +1 more source

Precision meets speed through an FPGA-based natively sparse Ising machine for combinatorial optimization. [PDF]

Nat Commun
Yao B, Ebler D, Shi X, Wang J, Zhang F, Zhang W, Sun J.   +6 more
europepmc   +1 more source

Predictable and Scalable Analog Matrix–Vector Multiplication in Memristor Crossbars via Closed‐Form Wire‐Resistance Compensation

Advanced Electronic Materials, EarlyView.
Wire resistance and sneak paths severely compromise the performance of large memristor crossbars. A predictive closed‐form distributed line‐resistance model, combined with a fourmatrix geometry‐averaging algorithm, eliminates these parasitic limitations.
Davide Rossetti, Yichun Xu, Ludovica Asselta, J. Joshua Yang, R. Stanley Williams, Fernando Corinto   +5 more
wiley   +1 more source

Reliable Ru‐Based CBRAM Synapses for Energy‐Efficient Neuromorphic Computing: Suppressing Filament Overgrowth and Read Noise via Ru‐Pt Alloy and AlOx Engineering

Advanced Electronic Materials, EarlyView.
Ru–Pt alloying suppresses filament overgrowth and an AlOx switching layer enhances reliable switching, hopping transport enables conductance tuning via hopping distance modulation, Ru7Pt3/AlOx/Pt device yields 16 low‐noise conductance states, a 2–3‐fold improvement over prior Ru‐based CBRAM, and CSNN inference on FMNIST reaches 81% accuracy with 103 ...
Sangmin Lee, Sungmin Yoo, Yeonjoo Jeong, Jaewook Kim, Hyun Jae Jang, Jongkil Park, Seongsik Park, Suyoun Lee, Byeong‐Kwon Ju, Jong Keuk Park, Inho Kim   +10 more
wiley   +1 more source

Design of low power and high speed approximate multipliers utilizing current mode 4 to 2 compressors based on CNTFET technology. [PDF]

Sci Rep
Foroutan P, Navi K.
europepmc   +1 more source

A Multimodal Piezoelectric Vertical Sidewall Architecture for Scalable In‐Plane NEMS Resonators

Advanced Electronic Materials, EarlyView.
A vertical in‐plane piezoelectric resonator design shifts frequency tuning from film thickness to lithographic lateral definition, facilitating monolithic multiband integration. Initially validated via microscale length‐extensional resonators, this cavities‐first fabrication approach scales to the nanoscale for high‐frequency operation.
Artem Gabrelian, Kristina Bespalova, Glenn Ross, Mervi Paulasto‐Kröckel   +3 more
wiley   +1 more source

Design of high-performance, accurate, and approximate Dadda-tree multipliers for image processing applications. [PDF]

Sci Rep
Rather AA, Khurshid B, Banday SA, Algarni AA.   +3 more
europepmc   +1 more source

Characterizing Fill Factor Limitations in Perovskite‐Silicon Tandem Solar Cells

Advanced Energy Materials, EarlyView.
The fill factor of monolithic perovskite‐Si tandem solar cells is limited by the photoshunt behavior of the perovskite top cells, which is the result of the competition between slow charge extraction through the transport layers and recombination in the absorber.
Yueming Wang, Nan Sun, Chris Dreessen, Gaosheng Huang, Alexander Eberst, Kaining Ding, Thomas Kirchartz   +6 more
wiley   +1 more source