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Terahertz emission from black silicon

Applied Physics Letters, 2008
We report on a terahertz emitter made out of black silicon. The black surface structure absorbs the whole optical pump power in the very surface. In contrast to expectations for indirect semiconductors, the black structure shows an emission in the terahertz range.
P. Hoyer   +3 more
openaire   +1 more source

Black Silicon Solar Cells with Black Ribbons

2016
32nd European Photovoltaic Solar Energy Conference and Exhibition; 631 ...
Schmidt Davidson, R.   +7 more
openaire   +1 more source

Electrical properties of black silicon

SPIE Proceedings, 2012
Black silicon thin films with supersaturated heavily doped sulfur were fabricated on silicon substrates through femtosecond laser scanning the silicon substrate surface in SF6 atmosphere. The temperature characteristics of the carrier concentration and mobility of the two-layer structure, black silicon films/silicon substrate, were measured with ...
Zhengxi Cheng, Yongping Chen, Bin Ma
openaire   +1 more source

An ultra‐black silicon absorber

Laser & Photonics Reviews, 2014
AbstractAn ultra‐black (A > 99%) broadband absorber concept on the basis of a needle‐like silicon nanostructure called Black Silicon is proposed. The absorber comprises Black Silicon established by inductively coupled plasma reactive ion etching (ICP‐RIE) on a highly doped, degenerated silicon substrate.
Martin Steglich   +6 more
openaire   +1 more source

Electrowetting Properties of Micro/Nanostructured Black Silicon

Langmuir, 2010
This paper reports on the electrowetting on dielectric (EWOD) properties of dual rough black silicon (Si) surfaces, produced by pulsed laser structuring of Si wafers and subsequently coating with a thermally grown oxide and a chloroalkylsilane layer. By varying the laser fluence, it was possible to tune the black Si wettability, from hydrophobicity to ...
Marios, Barberoglou   +4 more
openaire   +2 more sources

Conformal Transparent Conducting Oxides on Black Silicon

Advanced Materials, 2010
higher than those of state-of-the-art homojunction silicon solar cells. One reason is the interfacial electronic properties of the b-Si layer. In the literature, typically a thermally grown oxide is used to passivate the statistically structured surface of b-Si and metal contacts are fi red into the oxide.
Otto, M.   +8 more
openaire   +4 more sources

Optical Annealing of Black Silicon

2014
Silicon hyperdoped with chalcogens using femtosecond (fs) laser irradiation (“black silicon”) shows strong broad-band absorption due to intermediate band formation and surface texturing; thus, this material has promise for advanced optoelectronic devices such as silicon-based infrared photodetectors and intermediate band solar cells.
Benjamin Franta   +3 more
openaire   +1 more source

Black silicon

N M Ravindra, Priyanka Singh
  +4 more sources

Performance of Black Silicon Photodiodes

2023 IEEE Nuclear Science Symposium, Medical Imaging Conference and International Symposium on Room-Temperature Semiconductor Detectors (NSS MIC RTSD), 2023
T. Y. Tsang   +8 more
openaire   +1 more source

Black silicon carbide

Metal Finishing, 2000
openaire   +1 more source

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