Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n−/n+-Buffer Layer [PDF]
Micromachines, 2022 In this paper, a novel silicon super-junction (SJ) MOSFET embedded with a soft reverse recovery body diode is proposed and studied by numerical simulation.
Zhi Lin +4 more
doaj +2 more sources
TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode [PDF]
Micromachines, 2022 In this paper, a 650 V 4H-SiC trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a hetero-junction diode (HJD) and double current spreading layers (CSLs) is proposed and studied based on Sentaurus TCAD simulation.
Ruoyu Wang +5 more
doaj +2 more sources
An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures [PDF]
MicromachinesThe body diode degradation in SiC power MOSFETs has been demonstrated to be caused by basal plane dislocation (BPD)-induced stacking faults (SFs) in the drift region.
Jiashu Qian +8 more
doaj +2 more sources
A Trench Heterojunction Diode-Integrated 4H-SiC LDMOS with Enhanced Reverse Recovery Characteristics [PDF]
MicromachinesIn this paper, a novel 4H-SiC LDMOS structure with a trench heterojunction in the source (referred as to THD-LDMOS) is proposed and investigated for the first time, to enhance the reverse recovery performance of its parasitic diode. Compared with 4H-SiC,
Yanjuan Liu, Fangfei Bai, Junpeng Fang
doaj +2 more sources
Diode laser versus scalpel in the surgical treatment of infant ankyloglossia: a randomized, parallel, double-blind, controlled clinical trial [PDF]
BMC PediatricsBackground Ankyloglossia can impair vital functions such as breastfeeding, swallowing, and maxillomandibular development, making effective treatment essential.
Mariana Laprovitera Teixeira Carneiro +12 more
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Validation of In vivo Diode Characteristics at Extended Source to Surface Distance for Total Body Irradiation [PDF]
Journal of Medical PhysicsThe application of ISORAD diode detectors in treatments like total body irradiation (TBI), where small fractions of potentially lethal doses are delivered, lacks comprehensive clarity and requires further investigation.
K Nithin +3 more
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Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics [PDF]
NanomaterialsIn this study, a novel silicon carbide (SiC) double-trench MOSFET (DT-MOS) combined Schottky barrier diode (SBD) and MOS-channel diode (MCD) is proposed and investigated using TCAD simulations. The integrated MCD helps inactivate the parasitic body diode
Peiran Wang +10 more
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High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode
Energies, 2022 Built-in freewheeling diode metal–oxide–semiconductor field-effect transistors (MOSFETs) that ensure high performance and reliability at high voltages are crucial for chip integration.
Jaeyeop Na, Minju Kim, Kwangsoo Kim
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The Road to a Robust and Affordable SiC Power MOSFET Technology
Energies, 2021 This article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage variation across devices from the same vendor, instability of threshold ...
Hema Lata Rao Maddi +9 more
doaj +1 more source
Energies, 2021 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics.
Kyuhyun Cha, Kwangsoo Kim
doaj +1 more source