Results 1 to 10 of about 141,240 (139)
Materials Science Forum, 2023 SiC MOSFETs display reliability issues related to the quality of SiO2/SiC interface and bulk material due to the presence of near interface traps and point and extended material defects [1]. These material related issues give rise to a degradation of device reliability and ruggedness.
Lee, Geon Hee +3 more
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An Experimental Investigation of MOSFET Intrisic Body Diode Performance [PDF]
2018 IEEE 27th International Symposium on Industrial Electronics (ISIE), 2018 In order to enable evaluation of power loss during both forward and reverse conduction of intrinsic body diodes in power MOSFETs, an experimental series is performed to derive a set of expressions to approximate performance. A set of relevant performance metrics are selected, and then tested over a range of devices.
Petersen, A., Stone, D.A., Foster, M.P.
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Body diode reliability investigation of SiC power MOSFETs [PDF]
Microelectronics Reliability, 2016 A special feature of vertical power MOSFETs, in general, is the inbuilt body diode which could eliminate the need of having to use additional anti-parallel diodes for current freewheeling in industrial inverter applications: this, clearly, subject to their demonstration of an acceptable level of reliability. Recent improvements in Silicon Carbide (SiC)
Fayyaz, A., Romano, G., Castellazzi, A.
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Nasal septal Swell Body reduction a diode laser [PDF]
Russian Otorhinolaryngology, 2019 The nasal swell body (NSB) is a structure in the form of mucosa thickening from the nasal cavity bottom up to the middle nasal concha. The septal swell body was first described by Wustrow in the 17th century, he indicated it as an “intumescentia septi nasi anterior”; later, in 1900, P.
S. A. Karpishchenko +3 more
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First results on 1.2 kV SiC MOSFET body diode robustness tests
Microelectronics Reliability, 2023 The paper proposes a methodology study to analyze the body diode robustness of SiC MOSFETs. Devices from different manufacturers are used to validate the analysis. Two types of stresses have been applied: a continuous conduction test (BDCT) or a pulsed conduction test, the classical half-sine surge current test applied to body diodes, BDSCT.
Hassan Hamad +7 more
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Fabrication and characterization of the charge-plasma diode [PDF]
, 2010 We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body.
Hemert, T. van +5 more
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Bias temperature instability and condition monitoring in SiC power MOSFETs [PDF]
, 2018 Threshold voltage shift due to bias temperature instability (BTI) is a major concern in SiC power MOSFETs. The SiC/SiO2 gate dielectric interface is typically characterized by a higher density of interface traps compared to the conventional Si/SiO2 ...
Alatise, Olayiwola M. +1 more
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Laser microdissection as a new approach to prefertilization genetic diagnosis [PDF]
, 2000 The genetic status of oocytes can be determined by polar body (PB) analysis. Following PB extraction, a genetic evaluation is performed. As each PB contains the complementary genetic material of the oocyte, PB analysis reveals information about its ...
Buchholz, Tina +2 more
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Development of a Hybrid Photo-Diode and its Front-End Electronics for the BTEV Experiment [PDF]
, 2002 This paper describes the development of a 163-channel Hybrid Photo-Diode (HPD) to be used in the RICH Detector for the BTEV Experiment. This is a joint development project with DEP, Netherlands.
Alemi +5 more
core +4 more sources
A Radiation hard bandgap reference circuit in a standard 0.13um CMOS Technology [PDF]
, 2007 With ongoing CMOS evolution, the gate-oxide thickness steadily decreases, resulting in an increased radiation tolerance of MOS transistors. Combined with special layout techniques, this yields circuits with a high inherent robustness against X-rays and ...
Annema, A.-J. +4 more
core +4 more sources