Results 11 to 20 of about 141,674 (295)
Materials Science Forum, 2023 SiC MOSFETs display reliability issues related to the quality of SiO2/SiC interface and bulk material due to the presence of near interface traps and point and extended material defects [1]. These material related issues give rise to a degradation of device reliability and ruggedness.
Lee, Geon Hee +3 more
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An Experimental Investigation of MOSFET Intrisic Body Diode Performance [PDF]
2018 IEEE 27th International Symposium on Industrial Electronics (ISIE), 2018 In order to enable evaluation of power loss during both forward and reverse conduction of intrinsic body diodes in power MOSFETs, an experimental series is performed to derive a set of expressions to approximate performance. A set of relevant performance metrics are selected, and then tested over a range of devices.
Petersen, A., Stone, D.A., Foster, M.P.
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Body diode reliability investigation of SiC power MOSFETs [PDF]
Microelectronics Reliability, 2016 A special feature of vertical power MOSFETs, in general, is the inbuilt body diode which could eliminate the need of having to use additional anti-parallel diodes for current freewheeling in industrial inverter applications: this, clearly, subject to their demonstration of an acceptable level of reliability. Recent improvements in Silicon Carbide (SiC)
Fayyaz, A., Romano, G., Castellazzi, A.
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Nasal septal Swell Body reduction a diode laser [PDF]
Russian Otorhinolaryngology, 2019 The nasal swell body (NSB) is a structure in the form of mucosa thickening from the nasal cavity bottom up to the middle nasal concha. The septal swell body was first described by Wustrow in the 17th century, he indicated it as an “intumescentia septi nasi anterior”; later, in 1900, P.
S. A. Karpishchenko +3 more
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Energies, 2020 In this study, a novel 4H-SiC double-trench metal-oxide semiconductor field-effect transistor (MOSFET) with a side wall heterojunction diode is proposed and investigated by conducting numerical technology computer-aided design simulations.
Junghun Kim, Kwangsoo Kim
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Sensors, 2023 The value of a semiconductor’s diode temperature determines the correct operation of this element and its useful lifetime. One of the methods for determining the die temperature of a semiconductor diode is through the use of indirect thermographic ...
Arkadiusz Hulewicz +2 more
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First results on 1.2 kV SiC MOSFET body diode robustness tests
Microelectronics Reliability, 2023 The paper proposes a methodology study to analyze the body diode robustness of SiC MOSFETs. Devices from different manufacturers are used to validate the analysis. Two types of stresses have been applied: a continuous conduction test (BDCT) or a pulsed conduction test, the classical half-sine surge current test applied to body diodes, BDSCT.
Hassan Hamad +7 more
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A Radiation hard bandgap reference circuit in a standard 0.13um CMOS Technology [PDF]
, 2007 With ongoing CMOS evolution, the gate-oxide thickness steadily decreases, resulting in an increased radiation tolerance of MOS transistors. Combined with special layout techniques, this yields circuits with a high inherent robustness against X-rays and ...
Annema, A.-J. +4 more
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Fabrication and characterization of the charge-plasma diode [PDF]
, 2010 We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body.
Hemert, T. van +5 more
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Investigation of 1200 V SiC MOSFETs’ Surge Reliability
Micromachines, 2019 In this work, the surge reliability of 1200 V SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) from various manufactures has been investigated in the reverse conduction mode.
Huan Li +4 more
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