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Failure Mechanism Detection Algorithm with MOSFET Body Diode
2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2021Autonomous driving is playing a big role in the automotive industry and defines the future of mobility on a big scale. However, autonomous driving faces several challenges, such as the performance of artificial intelligence and hardware reliability. To ensure safe functionality, the reliability of the electronic components plays an essential role and ...
El Khatib, Mohamad +2 more
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Floating-Body Diode—A Novel DRAM Device
IEEE Electron Device Letters, 2012A novel 8F2 DRAM cell is introduced, consisting of two gates controlling a low-doped silicon-on-insulator channel and opposite-polarity source and drain. Simulation with models calibrated to experimental floating-body cell data confirms virtual thyristor memory operation and demonstrates 85°C retention time in excess of 10 ms in a scaled FinFET ...
Uygar E. Avci +2 more
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Body Diode Reliability of Commercial SiC Power MOSFETs
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2019Stacking faults in the drift layer of 1.7 kV 4H-SiC MOSFETs result in body diode degradation, poor carrier conduction in on-state, and high leakage current in off-state. In this paper, the results of forward-bias stress on body diodes are analyzed in commercially available 1.7 kV 4H-SiC MOSFETs. Some devices show a significant degradation after forward-
Minseok Kang +8 more
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Switching performance of a SiC MOSFET body diode and SiC schottky diodes at different temperatures
2017 IEEE Energy Conversion Congress and Exposition (ECCE), 2017This paper investigates the reverse recovery behaviour of a SiC MOSFET intrinsic/body diode and compares the diode's performance with similarly rated SiC Schottky diodes at different temperatures. A circuit level analytical modelling approach is proposed for rapid and accurate predictions of switching transients and losses.
M. R. Ahmed, R. Todd, A. J. Forsyth
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Characterization on latest-generation SiC MOSFET's body diode
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2016This work evaluates the reverse recovery behavior of CREE's Gen 3 900V SiC MOSFET's body diode under different conditions. As the highest current rating discrete SiC MOSFET available up-to-now, CREE's Gen 3 900V 10 mΩ SiC MOSFET is the main device under test (DUT) in this work. Both static and dynamic characteristics of the DUT are presented.
Xueyu Hou +2 more
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Characterization and modeling of SiC MOSFET body diode
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2016In this paper, the static and switching characterizations of a SiC MOSFET's body diode are presented. The static characterization of SiC MOSFET's body diode is carried out using a curve tracer and a double pulse test bench is built to characterize the inductive switching behavior of SiC MOSFET's body diode.
Kang Peng +2 more
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Efficacy of a multiple diode laser system for body contouring
Lasers in Surgery and Medicine, 2011AbstractBackground and ObjectivesLow‐level laser therapy (LLLT) has been shown to induce cellular reactions in nonphotosynthetic cells however skepticism remains regarding efficacy at the clinical level. The purpose of this study was to evaluate the efficacy of LLLT independent of liposuction.
Courtney M L, Elm +3 more
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Materials Science Forum, 2017
External Schottky barrier diodes (SBD) are generally used to suppress the conduction of the body diode of MOSFET. A large external SBD is required for a high voltage module because of its high specific resistance, while the forward voltage of SBD should be kept smaller than the built-in potential of the body diode.
Shiro Hino +9 more
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External Schottky barrier diodes (SBD) are generally used to suppress the conduction of the body diode of MOSFET. A large external SBD is required for a high voltage module because of its high specific resistance, while the forward voltage of SBD should be kept smaller than the built-in potential of the body diode.
Shiro Hino +9 more
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Whole-body Fluorescent Optical Imaging Based on Power Light Emitting Diode
2005 IEEE Engineering in Medicine and Biology 27th Annual Conference, 2005With complex configuration, the general whole-body fluorescence optical imaging system is power-consuming for it is mainly composed of laser or mercury lamp, filter and fiber-optic cable. In this paper we aimed at setting up a compact imaging system based on power light emitting diode (LED).
Yanping, Chen +4 more
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Threshold Voltage Monitoring Method for SiC MOSFET Based on Body Diode Voltage under Body Effect
2021 IEEE 4th International Electrical and Energy Conference (CIEEC), 2021Threshold voltage (V TH ) shift caused by bias temperature instability (BTI) has become the most serious reliability problems in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). BTI-induced V TH shift is divided into recoverable shift and permanent shift.
Jinlei Xin +5 more
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