Results 21 to 30 of about 141,674 (295)
The Effect of the Pillar Ripple on the Reverse Recovery in Superjunction MOSFETs
Power Electronic Devices and Components, 2022 Fast dI/dt and oscillations often are the causes of failure during the reverse-recovery of superjunction MOSFETs. These issues become more prominent with shrinking the pitch size of the superjunction in an attempt to improve the overall performance from ...
H. Kang, N. Donato, F. Udrea
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Bias temperature instability and condition monitoring in SiC power MOSFETs [PDF]
, 2018 Threshold voltage shift due to bias temperature instability (BTI) is a major concern in SiC power MOSFETs. The SiC/SiO2 gate dielectric interface is typically characterized by a higher density of interface traps compared to the conventional Si/SiO2 ...
Alatise, Olayiwola M. +1 more
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IEEE Journal of the Electron Devices Society, 2022 SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse ...
Dongyoung Kim +4 more
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Development of a Hybrid Photo-Diode and its Front-End Electronics for the BTEV Experiment [PDF]
, 2002 This paper describes the development of a 163-channel Hybrid Photo-Diode (HPD) to be used in the RICH Detector for the BTEV Experiment. This is a joint development project with DEP, Netherlands.
Alemi +5 more
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Superconducting gravimeters based on advanced nanomaterials and quantum neural network
Sistemnì Doslìdženâ ta Informacìjnì Tehnologìï, 2022 The paper is focused on a new concept of a cryogenic-optical sensor intended for use in the space industry, geodynamics, and fundamental experiments. The basis of the sensor is a magnetic suspension with a levitating test body, a high-precision optical ...
Vitaly Yatsenko +2 more
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A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching
Micromachines, 2023 A novel split-gate SiC MOSFET with an embedded MOS-channel diode for enhanced third-quadrant and switching performances is proposed and studied using TCAD simulations in this paper.
Ping Li +3 more
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机车电传动, 2021 For super junction field effect transistor (SJ-MOSFET), two device structures with different p-pillar morphology of multiple epitaxial ion implantation and deep groove etching were established.
Maosen TANG +5 more
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AIP Advances, 2020 This study examines the impact of the different diode characteristics on the magnetic hysteretic and iron loss properties of a conventional non-oriented (NO) silicon steel sheet core under silicon carbide (SiC) inverter excitation.
Atsushi Yao +5 more
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Contactless heat flux control with photonic devices [PDF]
, 2015 The ability to control electric currents in solids using diodes and transistors is undoubtedly at the origin of the main developments in modern electronics which have revolutionized the daily life in the second half of 20th century.
Ben-Abdallah, Philippe, Biehs, Svend-Age
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Study on Anti-surge Capacity of Body Diode of 1 200 V SiC MOSFET
机车电传动, 2021 The anti-surge capability of the body diode of 1 200 V planar, double trench and asymmetric trench SiC MOSFETs was compared and analyzed by experiment.
Chao CHEN +3 more
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