Results 31 to 40 of about 141,674 (295)
Study on Surge Capacity of SiC MOSFET Based on Channel State
机车电传动, 2021 The reliability of the SiC MOSFET body diode has been greatly improved due to technological progress, and it has replaced freewheeling diodes in some fields and modules. Based on the surge current test, the non-repetitive surge current characteristics of
Heli MENG +3 more
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International Journal of Engineering Materials and Manufacture, 2019 Diode components used in the electronic relay packages of avionics of a weapon system had been found corroded. Two sets of the complete assembly of the damaged diode parts consisting of diode body, plain washer, spring washer and mounting nuts were ...
Mrityunjoy Hazra, Satyapal Singh
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Laser microdissection as a new approach to prefertilization genetic diagnosis [PDF]
, 2000 The genetic status of oocytes can be determined by polar body (PB) analysis. Following PB extraction, a genetic evaluation is performed. As each PB contains the complementary genetic material of the oocyte, PB analysis reveals information about its ...
Buchholz, Tina +2 more
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Body Diode of 1.2kV SiC MOSFET: Unipolar and Bipolar Operation
Materials Science Forum, 2023 In this work, we investigate the Body Diode (BD) of a 40mOhm, 1.2kV SiC MOSFETs. We performed DC measurements and switching measurements, at Room Temperature (RT) and High Temperature (HT) (T=175°C), together with TCAD simulation and calibration. In switching measurements, we focused on the low side (LS) switch turn-on event, i.e., the BD turn-off ...
Thanh Toan Pham +2 more
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Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions
EnergiesThis paper investigates the behavior of SiC MOSFETs body diode reverse recovery as a function of different operating conditions. The knowledge of their effects is crucial to properly designing and driving power converters based on SiC devices, in order ...
Giuseppe Pennisi +7 more
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Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction
Nanoscale Research Letters, 2022 A vertical GaN power MOSFET featuring an integrated fin-shaped non-junction diode (FDMOS) is proposed to improve reverse conduction and switching characteristics.
Tao Sun +7 more
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The Berkeley tunable far infrared laser spectrometers [PDF]
, 1991 A detailed description is presented for a tunable far infrared laser spectrometer based on frequency mixing of an optically pumped molecular gas laser with tunable microwave radiation in a Schottky point contact diode.
Blake, G. A. +7 more
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, 2006 Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations.
Ashburn, P. +6 more
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IEEE Journal of the Electron Devices Society, 2019 We report on the implementation of dynamic body-bias technique to improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) with the successful integration of body-diode.
Isra Mahaboob +5 more
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Non-Reciprocal Geometric Wave Diode by Engineering Asymmetric Shapes of Nonlinear Materials [PDF]
, 2014 Unidirectional nonreciprocal transport is at the heart of many fundamental problems and applications in both science and technology. Here we study the novel design of wave diode devices by engineering asymmetric shapes of nonlinear materials to realize ...
Li, Nianbei, Ren, Jie
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