Boron: a Hunt for Superhard Polymorphs [PDF]
, 2009 Boron is a unique element, being the only element, all known polymorphs of which are superhard, and all of its crystal structures are distinct from any other element.
Oganov, A. R., Solozhenko, V. L.
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Removal of Boron from aqueous solutions by adsorption using fly ash, zeolite and demineralized lignite [PDF]
, 2009 In the present study for the purpose of removal of boron from water by adsorption using adsorbents like fly ash, natural zeolite and demineralized lignite was investigated.
Yuksel, Seren +3 more
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Development of accuracy enhancement system for boron meters using multisensitive detector for reactor safety [PDF]
, 2020 Boric acid is used as a coolant for pressurized-water reactors, and the degree of burnup is controlled by the concentration of boric acid. Therefore, accurate measurement of the concentration of boric acid is an important factor in reactor safety.
Kim, Hee Reyoung, Sung, Si Hyeong
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First Principles Simulations of Boron Diffusion in Graphite [PDF]
, 2007 Boron strongly modifies electronic and diffusion properties of graphite. We report the first ab initio study of boron interaction with the point defects in graphite, which includes structures, thermodynamics, and diffusion. A number of possible diffusion
El-Barbary, A A +3 more
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Boron Fullerenes: A First-Principles Study [PDF]
, 2007 A family of unusually stable boron cages was identified and examined using first-principles local density functional method. The structure of the fullerenes is similar to that of the B12 icosahedron and consists of six crossing double-rings.
A N. Alexandrovaa +15 more
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Stability of boron-doped graphene/copper interface: DFT, XPS and OSEE studies [PDF]
, 2018 Two different types of boron-doped graphene/copper interfaces synthesized using two different flow rates of Ar through the bubbler containing the boron source were studied.
Boukhvalov, D. W. +6 more
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Shouldering in B diffusion profiles in Si: Role of di-boron diffusion [PDF]
, 2003 The role of di-boron diffusion in evolution of B diffusion profiles has been investigated. We find that boron pair (B-s-B-i) diffusion can become as important as boron-interstitial pair (B-s-Si-i) diffusion when both boron concentration and annealing ...
Goddard, William A., III +1 more
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Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements [PDF]
, 2001 Injection-level dependent recombination lifetime measurements of iron-diffused, boron-doped silicon wafers of different resistivities are used to determine the electron and hole capture crosssections of the acceptor level of iron-boron pairs in silicon.
Cuevas, Andres +2 more
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Boron Abundances in Main Sequence B-type Stars: A Test of Rotational Depletion during Main Sequence Evolution [PDF]
, 2001 Boron abundances have been derived for seven main sequence B-type stars from HST STIS spectra around the B III 2066 A line. In two stars, boron appears to be undepleted with respect to the presumed initial abundance.
A. M. Brooks +29 more
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, 2018 The addition of boron to GaAs nanowires grown by self-catalyzed molecular beam epitaxy was found to have a strong effect on the nanowire morphology, with axial growth greatly reduced as the nominal boron concentration was increased. Transmission electron
Andrews, Aaron M. +7 more
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