Results 41 to 50 of about 1,949,697 (379)
Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV
IEEE Electron Device Letters, 2018 High-voltage vertical Ga2O3 MISFETs are developed employing halide vapor phase epitaxial (HVPE) layers on bulk Ga2O3 (001) substrates. The low charge concentration of ~1016 cm−3 in the n-drift region allows three terminal breakdown voltages to reach up ...
Zongyang Hu +8 more
semanticscholar +1 more source
Analysis of Anti-JFET for 600V VDMOS and HCI Reliability
MATEC Web of Conferences, 2018 In VDMOS device the anti-JFET concentration has important role for determining the breakdown voltage and on-resistance of the device. Because higher N-drift doping concentration can provide the very best on-resistance of the device but also decrease ...
Yang Shao-Ming +3 more
doaj +1 more source
High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs
IEEE Electron Device Letters, 2019 In evaluating GaN high-electron mobility transistors (HEMTs) for high-power applications, it is crucial to consider the device-level breakdown characteristics.
A. Hickman +6 more
semanticscholar +1 more source
IEEE Access, 2020 This paper presents the investigation on the breakdown characteristics and pre-breakdown streamer propagation of Palm Oil (PO) impregnated aged pressboard under positive lightning impulse voltages.
Yee Von Thien +5 more
doaj +1 more source
Micromachines, 2022 This study investigates the operational characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by applying a slant-gate structure and drain-side extended field-plate (FP) for improved breakdown voltage.
Jun-Ho Lee +7 more
doaj +1 more source
Non-equilibrium electronic transport in a one-dimensional Mott insulator [PDF]
, 2010 We calculate the non-equilibrium electronic transport properties of a one-dimensional interacting chain at half filling, coupled to non-interacting leads.
A. Branschädel +7 more
core +2 more sources
Applied Sciences, 2023 With 45# transformer oil as the base fluid, different concentrations of TiO2 nanomodified transformer oil were prepared via the thermal oscillation method.
Chunxu Qin +5 more
doaj +1 more source
4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability
Japanese Journal of Applied Physics, 2019 In order to avoid sudden catastrophic hard breakdown in high breakdown voltage vertical GaN p–n junction diodes, punch-through induced breakdown structures have been newly considered.
H. Ohta +5 more
semanticscholar +1 more source
Simulation, design and fabrication of large area implanted silicon two-dimensional position sensitive radiation detectors [PDF]
, 1991 The fabrication process of a two-dimensional position sensitive radiation detector (2-D PSD) with a 4 cm2 active area is presented. Critical steps in the fabrication are emphasised.
Aïte, K. +3 more
core +2 more sources
IEEE Transactions on Electron Devices, 2018 We make a 2-D analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high- ${k}$ passivation layer, and the results are compared with those having a normal SiN passivation layer.
T. Kabemura +3 more
semanticscholar +1 more source