High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications. [PDF]
Tajalli A +12 more
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Effect of Metal Oxide Nanoparticles on the Breakdown Voltage of Transformer Oil Containing Cellulose Particles. [PDF]
Negm TS, Mansour DA, Hossam-Eldin AA.
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Demonstration of TFTs 3D monolithically integrated on GaN HEMTs using cascode configuration with high breakdown voltage (> 1900 V). [PDF]
Wu TL +5 more
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High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage. [PDF]
Zhang Y +9 more
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Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]
Omar A, Loan SA.
europepmc +1 more source
A Three-Terminal Si-Ge Avalanche Photodiode with a Breakdown Voltage of 6.8 V and a Gain Bandwidth Product of 1377 GHz. [PDF]
Cheng C, Xue J, Yu X, Mu J, Wang B.
europepmc +1 more source
Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics. [PDF]
Wang P +10 more
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Deep Learning Method for Breakdown Voltage and Forward <i>I-V</i> Characteristic Prediction of Silicon Carbide Schottky Barrier Diodes. [PDF]
Zhou H +7 more
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Study on the influence of TiO2 nanoparticles on the breakdown voltage of transformer oil under severe cold conditions. [PDF]
Qin C +5 more
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Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage. [PDF]
Peng Z, Liu H, Yu H, Li L, Chang KC.
europepmc +1 more source

