Results 201 to 210 of about 19,099,873 (241)

Modeling of Diamond Trench Metal Oxide Semiconductor Barrier Schottky Rectifier Based on Dynamic Reverse Bias Simulation Framework

open access: yesphysica status solidi (a), Volume 223, Issue 17, 9 September 2026.
Time‐resolved mixed‐mode technology computer aided design simulations reveal that the transient ionization response of deep boron acceptors fundamentally modifies the charge‐sharing mechanism in diamond TMBS rectifiers. Consequently, the optimum trench geometry under dynamic reverse‐bias conditions differs significantly from conventional quasi‐static ...
Martin Kah   +8 more
wiley   +1 more source

High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy. [PDF]

open access: yesNat Commun
Zhou H   +25 more
europepmc   +1 more source

Study on Electrical and Temperature Characteristics of β-Ga2O3-Based Diodes Controlled by Varying Anode Work Function. [PDF]

open access: yesNanomaterials (Basel)
He Y   +12 more
europepmc   +1 more source

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