Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor Field-Effect Transistors. [PDF]
Bao M, Wang Y, Yang J, Li X.
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Time‐resolved mixed‐mode technology computer aided design simulations reveal that the transient ionization response of deep boron acceptors fundamentally modifies the charge‐sharing mechanism in diamond TMBS rectifiers. Consequently, the optimum trench geometry under dynamic reverse‐bias conditions differs significantly from conventional quasi‐static ...
Martin Kah +8 more
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Investigation of Channel Mobility Enhancement Techniques Using Si/SiGe/GeSn Materials in Orthogonally Oriented Selective Buried Triple Gate Vertical Power MOSFET: Design and Performance Analysis. [PDF]
Lodhi MEA +4 more
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High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy. [PDF]
Zhou H +25 more
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Study on Electrical and Temperature Characteristics of β-Ga2O3-Based Diodes Controlled by Varying Anode Work Function. [PDF]
He Y +12 more
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Effects of cold plasma generated ozone on development of Galleria mellonella induced alterations in hemolymph protein and biochemistry of beeswax. [PDF]
Abotaleb AO +4 more
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A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Q<sub>gd</sub> and R<sub>on</sub>. [PDF]
Cui W, Guo J, Xu H, Zhang DW.
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Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs. [PDF]
Cui W +6 more
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Structural Optimization and Trap Effects on the Output Performance of 4H-SiC Betavoltaic Cell. [PDF]
Kim KM, Kang IM, Seo JH, Yoon YJ, Kim K.
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High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area. [PDF]
Oh K +8 more
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