Results 241 to 250 of about 2,260 (262)

Demonstration of Integrated Quasi-Vertical DMOS Compatible with the Bipolar-CMOS-DMOS Process Achieving Ultralow R_ON,sp. [PDF]

Nanomaterials (Basel)
Lin F, Wu T, Wang W, Wang Z, Zhang Y, Li S, Ye R, Zhang L, Wei J, Liu S, Sun W.   +10 more
europepmc   +1 more source

PFAS properties and destruction methods: A focus on enzymatic degradation

Journal of Chemical Technology &Biotechnology, Volume 101, Issue 6, Page 1126-1152, June 2026.
Abstract Per‐ and polyfluoroalkyl substances (PFAS) are known as ‘forever’ chemicals and have lasting detrimental impact on the environment and living organisms. To understand PFAS molecules better, this review begins with an overview of PFAS definition, classifications and applications, and then provides a comprehensive summary and critical analysis ...
Guobin Liang, Hua Zhao
wiley   +1 more source

An immunoregenerative approach to mitigate post-traumatic osteoarthritis after intra-articular fracture. [PDF]

Bone Joint Res
Valerio MS, Edwards JB, Clark AR, Motherwell JM, Potter BK, Dearth CL, Goldman SM.   +6 more
europepmc   +1 more source

Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing. [PDF]

Micromachines (Basel)
Quddus MT, Latorre-Rey AD, Ramezani Z, Mudholkar M.   +3 more
europepmc   +1 more source

The Barrier Inhomogeneity and the Electrical Characteristics of W/Au <i>β</i>-Ga₂O₃ Schottky Barrier Diodes. [PDF]

Micromachines (Basel)
Xie L, Zhang T, Xu S, Su H, Tao H, Gao Y, Liu X, Zhang J, Hao Y.   +8 more
europepmc   +1 more source

Fermented <i>Lactobacillus plantarum</i> GKD7 prevents osteoarthritis pain and progression in a preclinical <i>in vivo</i> model. [PDF]

Int J Med Sci
Hsu CJ, Lee KT, Chen LC, Tsai YS, Chen YP, Chen YL, Chen CC, Lin YY, Chang TC, Tang CH.   +9 more
europepmc   +1 more source

Effect of Multiplication and Charge Layers on the Gain in InGaAsSb/AlGaAs Avalanche Photodiodes at Room Temperature. [PDF]

Sensors (Basel)
Manyk T, Rutkowski J, Kłos K, Gajowski N, Krishna S, Martyniuk P.   +5 more
europepmc   +1 more source

1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance. [PDF]

Micromachines (Basel)
Li M, Qiu Z, Li T, Kang Y, Lu S, Hu X.
europepmc   +1 more source

Poster Sessions

HemaSphere, Volume 10, Issue S1, June 2026.
wiley   +1 more source

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High breakdown voltage InGaAs/InP double heterojunction bipolar transistors withf_max= 256 GHz and BV_CEO= 8.3 V

Journal of Semiconductors, 2012
An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1 × 15 μm2 exhibits a current cutoff frequency ft = 170 GHz and a maximum oscillation frequency fmax = 256 GHz.
Wei Cheng, Yan Zhao, Hanchao Gao, Chen Chen, Naibin Yang   +4 more
openaire   +1 more source