Results 121 to 130 of about 2,343 (175)

Thermoelectric properties of Bi2SexTe3−x prepared by Bridgman method

Journal of Alloys and Compounds, 2011
Abstract Bi 2 Se x Te 3− x crystals with various x values were grown by Bridgman method. The electrical conductivity, σ , was found to decrease with increasing Se content. The highest σ of 1.6 × 10 5  S m −1 at room temperature was reached at x  = 0.12 with a growth rate of 0.8 mm h −1 .
Z M Sun
exaly   +2 more sources

Multi-Physical Field Simulation of Cracking during Crystal Growth by Bridgman Method [PDF]

Materials, 2023
Chao Xie
exaly   +2 more sources

Bulk crystal growth of Mg2Si by the vertical Bridgman method

Thin Solid Films, 2004
Abstract Mg2Si were grown by the vertical Bridgman (VB) method in crucibles made of chemical vapor deposition (CVD) pyrolytic graphite (PG) in order to minimize the reaction and sticking of molten Mg–Si during growth. Congruent crystallization was derived from a stoichiometric melt of Mg2Si, and incongruent crystallization was derived from ...
Y Takanashi
exaly   +2 more sources

Growth of birefringent crystal α-BaB2O4 by Bridgman method

Materials Letters, 2003
Abstract The growth of novel birefringent crystal α-BaB 2 O 4 by the modified Bridgman method has been reported in this paper. By means of the optimum conditions such as stoichiometric feed materials, sealed platinum crucibles, [001] growth direction, growth rate less than 0.3 mm/h and convex or plane solid–liquid interface with temperature gradient
Xinmin Zhang, Haiping X, Hongbing Chen   +2 more
exaly   +2 more sources

Defects in GaSe grown by Bridgman method

Journal of Microscopy, 2014
SummaryOptical quality GaSe crystals have been grown by vertical Bridgman method. The structural properties and micromorphology of a cleaved GaSe(001) surface have been evaluated by RHEED, SEM and AFM. The cleaved GaSe(001) is atomically flat with as low roughness as ∼0.06 nm excepting local hillock type defects.
K A, Kokh, V V, Atuchin, T A, Gavrilova, A, Kozhukhov, E A, Maximovskiy, L D, Pokrovsky, A R, Tsygankova, A I, Saprykin   +7 more
openaire   +2 more sources

Growth of CdZnTe by the detached Bridgman method

SPIE Proceedings, 2012
ABSTRACT We have developed the detached Bridgman process for growth of CdZnTe crystals. Detachment of the solidification interface from the growth ampoule results in a low density of dislocations in the grown material and large single crystal grains.
Shariar Motakef, Piotr Becla, Stacy Swider, Krzysztof Becla, John Fiala, Matthew R. Overholt   +5 more
openaire   +1 more source

Growth of LiNbO3 crystals by the Bridgman method

Journal of Crystal Growth, 2003
Abstract The growth of LiNbO 3 crystals by the modified Bridgman method has been reported. The feed material with accurate congruent melt composition is suitable to grow the crystals. Composition change of the melt during growth can be avoided by sealing platinum crucibles. Using the optimum conditions such as growth rate of 1–3 mm/h and temperature
Hongbing Chen, Haiping Xia, Jinhao Wang, Jianli Zhang, Jiayue Xu, Shiji Fan   +5 more
openaire   +1 more source

Full encapsulated CdZnTe crystals by the vertical Bridgman method

Journal of Crystal Growth, 2008
CdZnTe crystals were grown by the vertical Bridgman technique using boron oxide for preventing material decomposition. The experiments show that a boron oxide layer completely encapsulates the crystal during growth, so that the crystal grows without direct contact with the crucible. The origins of this effect are investigated.
Zha M, Zappettini A, Calestani D, Marchini L, Zanotti L, Paorici C   +5 more
openaire   +3 more sources

The texture of GaSb ingots grown by the bridgman method

Crystal Research and Technology, 1983
AbstractCrystallographic features of GaSb grown by the Bridgman procedure were investigated by scanning electron microscopy. Chemical etching and the electron channelling method were used to determine the position and crystallographic orientation of crystallites.
F. Koltai, M. Hársy, E. Lendvay
openaire   +1 more source