Results 141 to 150 of about 2,343 (175)

Crystal growth of orthorhombic BaSi2 by the vertical Bridgman method

Thin Solid Films, 2004
Melt growth of BaSi2 by the vertical Bridgman (VB) growth method was initiated from barium metal (3 N grade) and semiconductor-grade silicon. Because Ba is highly reactive at the growth temperature (≈1500 K), the crucible materials were chosen to avoid chemical reactions and sticking between the crucibles and the molten and vapor Ba.
S Kishino, T Iida, T Kuji, Y Takanashi
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Behavior of arsenic in ZnSe grown by a closed Bridgman method

Materials Letters, 2008
Abstract High-quality and large-size ZnSe single crystals doped with arsenic (As) have been grown by a closed Bridgman method. Photoluminescence (PL) spectra show bound exciton emission related to As acceptors and strong donor acceptor pair (DAP) emissions in all As-doped ZnSe.
Jifeng Wang, Taiki Miyano, Minoru Isshiki   +2 more
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Bulk growth of gallium antimonide crystals by Bridgman method

Bulletin of Materials Science, 1990
Gallium antimonide crystals were grown by the vertical Bridgman technique. Effects of ampoule diameter and dopant impurities (Te, P and In) on growth were studied. Crystal stoichiometry and homogeneity were verified with electron-probe microanalysis.
U N Roy, S Basu
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Growth of bismuth tellurite crystals by vertical Bridgman method

Journal of Crystal Growth, 2005
Abstract The growth of bismuth tellurite crystals by the modified vertical Bridgman method has been reported in this paper. The volatilization of melt is avoided by sealing the double-shell platinum crucibles and the cracking of crystals is decreased under smaller temperature gradients in the Bridgman furnace.
Hongbing Chen, Rongsheng Li, Congxin Ge, Xiang Ge, Wei Xu   +4 more
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Deformational twinning in CdTe crystals grown by the Bridgman method

Materials Science and Engineering: B, 2001
Abstract The results of the crystal growth of cadmium telluride (CdTe) crystals by the Bridgman method are reported in the present work. A stoichiometric ratio of cadmium and tellurium in the melt as well as cadmium- and tellurium-rich melts are used in the different crystal growth experiments by the Bridgman method.
T.I Milenov, M.M Gospodinov
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Impurities in CdZnTe crystal grown by vertical Bridgman method

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2004
Abstract The impurity segregation in CdZnTe grown by vertical Bridgman method and its corresponding effects on the crystal optical and electrical properties have been studied in detail. Inductively coupled plasma mass spectrometry reveals that impurities Al and Ga with segregation coefficient larger than one centralize in the first-to-freeze portion ...
Guoqiang Li, Wanqi Jie, Tao Wang, Ge Yang   +3 more
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Growth of lead sulfide single crystals by the bridgman method

Materials Research Bulletin, 1975
Abstract Large crackfree crystals could be grown by the Bridgman technique using graphite ampoules. Their metallurgical properties are typical for Bridgman crystals. However, a high content of carbon is incorporated into the crystals using this method.
K.-H. Gutknecht, H. Preier, J. Hesse
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ZnSe:Cr????? laser crystals grown by Bridgman method

2018
?????????????? ???????????? ?????????????????????? ?????????????????????? ?????????????????? ZnSe, ?????????????????? ???????????????? Cr?????, ?????? ???????????????????????????? ?????????????? ???????????????????? ???? ?????????????????? (2 ... 3 ??????). ???????????????? ?????????????? ???????????????????????? ???????????????? ?? ?????????????? ?????
Komar, V.K., Nalivaiko, D.P., Sulima, S.V., Zagoruiko, Yu.A., Fedorenko, O.A., Kovalenko, N.O., Chugai, O.N., Terzin, I.S., Gerasimenko, A.S., Dubina, N.G.   +9 more
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Growth of Bi2Sr2CaCu2Oy Single Crystal by a Vertical Bridgman Method

1998
We prepared Bi2Sr2CaCu2Oy (BSCCO) single crystals by a vertical Bridgman method changing the contents of starting materials, the pulling down rates and the temperatures for melting. From the results, we found that the plate-like BSCCO single crystals with the size of 15 × 7mm2 were obtained and were a (2212) single-phase, when the crystal growth was ...
Eiji Hosokawa, Satoru Kishida, Akito Tanaka, Tuyoshi Koike, Heizo Tokutaka   +4 more
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Characterization of CdTe crystals grown by the Vertical Bridgman method

2001 IEEE Nuclear Science Symposium Conference Record (Cat. No.01CH37310), 2002
CdTe crystals had been grown by the Vertical Bridgman method with diameters from 25 mm up to 75 mm. To obtain stable growth conditions the growth rate and temperature gradient had been adjusted by in-situ temperature monitoring. Several modifications had been applied to improve crystallinity.
M. Fiederle, A. Fauler, V. Babentsov, J. Franc, J. Ludwig, K.W. Benz   +5 more
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