Establishment of "Structure-Efficiency" Relationship in Ultra-High Purity Metal Systems: Multi-Scale Analysis of Tellurium as a Prototype. [PDF]
Adv Sci (Weinh)Guo S +7 more
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Evaluation of the Influence of Primary and Secondary Crystal Orientations and Selected Structural Characteristics on Creep Resistance in Single-Crystal Nickel-Based Turbine Blades. [PDF]
Materials (Basel)Gancarczyk K +4 more
europepmc +1 more source
Telehealth Training and Education for Allied Health Professionals: A Scoping Review. [PDF]
Telemed RepAnil K +7 more
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Simulation of Industrial Crystal Growth by the Vertical Bridgman Method [PDF]
, 2003 Single crystals of Cadmium-Zinc-Telluride are used as a substrate material for the production of infrared detectors and are usually grown by the vertical Bridgman method. We present a simulation of the whole growth process in two steps: In the first step, the (stationary) heat transport in the furnace is modeled and calculated for different positions ...
Dziuk, Gerhard +6 more
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Thermoelectric properties of Bi2SexTe3−x prepared by Bridgman method
Journal of Alloys and Compounds, 2011Abstract Bi 2 Se x Te 3− x crystals with various x values were grown by Bridgman method. The electrical conductivity, σ , was found to decrease with increasing Se content. The highest σ of 1.6 × 10 5 S m −1 at room temperature was reached at x = 0.12 with a growth rate of 0.8 mm h −1 .
N. Keawprak +3 more
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Bulk crystal growth of Mg2Si by the vertical Bridgman method
Thin Solid Films, 2004Abstract Mg2Si were grown by the vertical Bridgman (VB) method in crucibles made of chemical vapor deposition (CVD) pyrolytic graphite (PG) in order to minimize the reaction and sticking of molten Mg–Si during growth. Congruent crystallization was derived from a stoichiometric melt of Mg2Si, and incongruent crystallization was derived from ...
M Yoshinaga +4 more
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Growth of birefringent crystal α-BaB2O4 by Bridgman method
Materials Letters, 2003Abstract The growth of novel birefringent crystal α-BaB 2 O 4 by the modified Bridgman method has been reported in this paper. By means of the optimum conditions such as stoichiometric feed materials, sealed platinum crucibles, [001] growth direction, growth rate less than 0.3 mm/h and convex or plane solid–liquid interface with temperature gradient
Hongbing Chen +6 more
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Growth of β-Ga 2 O 3 single crystals using vertical Bridgman method in ambient air [PDF]
Journal of Crystal Growth, 2016 A new approach to beta-Ga2O3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the beta-Ga2O3 melting temperature and investigating the effects of crucible composition and shape.
Miyagawa, C +5 more
exaly +5 more sources
Growth and characterization of large size undoped p -type SnSe single crystal by Horizontal Bridgman method [PDF]
Journal of Alloys and Compounds, 2017 A Horizontal Bridgman (HB) method was employed attempt to grow large size undoped SnSe single crystal. SnSe was crystallized under 2-3 degrees C/cm temperature gradient and cooled to room temperature at a rate of similar to 25 degrees C/h to release ...
Min Jin, Hezhu Shao, Haoyang Hu
exaly +2 more sources
Defects in GaSe grown by Bridgman method
Journal of Microscopy, 2014SummaryOptical quality GaSe crystals have been grown by vertical Bridgman method. The structural properties and micromorphology of a cleaved GaSe(001) surface have been evaluated by RHEED, SEM and AFM. The cleaved GaSe(001) is atomically flat with as low roughness as ∼0.06 nm excepting local hillock type defects.
K A, Kokh +7 more
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