Results 151 to 160 of about 3,896 (209)

Temperature Dependence of the Band Gap and Exciton Photoreflectance in Layered Gallium Telluride. [PDF]

ACS Appl Mater Interfaces
Sta Maria CC, Wu PH, Pratama Hasibuan D, Sinta Saragih C, Giap H, Nguyen DH, Chen YR, Phan GT, Pham DV, Shen JL, Lai CC, Wu MK, Ma YR.   +12 more
europepmc   +1 more source

Modelling freckles and spurious grain formation in directionally solidified superalloy castings. [PDF]

Commun Mater
Zhang H, Zhao Y, Xiong W, Ma D, Ludwig A, Kharicha A, Wu M.   +6 more
europepmc   +1 more source

Ten Recommendations for Improving Research on Stroke Motor Rehabilitation: A Unified Perspective. [PDF]

Restor Neurol Neurosci
Krishnan C, Augenstein TE, Ranganathan R.   +2 more
europepmc   +1 more source

Evaluation of the Influence of Primary and Secondary Crystal Orientations and Selected Structural Characteristics on Creep Resistance in Single-Crystal Nickel-Based Turbine Blades. [PDF]

Materials (Basel)
Gancarczyk K, Albrecht R, Sułkowicz P, Szala M, Walczak M.   +4 more
europepmc   +1 more source

Telehealth Training and Education for Allied Health Professionals: A Scoping Review. [PDF]

Telemed Rep
Anil K, Bird A, Bridgman K, Erickson S, Freeman J, McKinstry C, Robinson C, Abey S.   +7 more
europepmc   +1 more source

Stoichiometric effect on the defect states and optical properties of LiInSe₂ single crystals. [PDF]

Sci Rep
Zheng Z, Yu H, Zhu M, Zhang Z, Gao Z, Xu M, Zhang R, Xu Y.   +7 more
europepmc   +1 more source

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Thermoelectric properties of Bi2SexTe3−x prepared by Bridgman method

Journal of Alloys and Compounds, 2011
Abstract Bi 2 Se x Te 3− x crystals with various x values were grown by Bridgman method. The electrical conductivity, σ , was found to decrease with increasing Se content. The highest σ of 1.6 × 10 5  S m −1 at room temperature was reached at x  = 0.12 with a growth rate of 0.8 mm h −1 .
N. Keawprak, S. Lao-ubol, C. Eamchotchawalit, Z.M. Sun   +3 more
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Bulk crystal growth of Mg2Si by the vertical Bridgman method

Thin Solid Films, 2004
Abstract Mg2Si were grown by the vertical Bridgman (VB) method in crucibles made of chemical vapor deposition (CVD) pyrolytic graphite (PG) in order to minimize the reaction and sticking of molten Mg–Si during growth. Congruent crystallization was derived from a stoichiometric melt of Mg2Si, and incongruent crystallization was derived from ...
M Yoshinaga, T Iida, M Noda, T Endo, Y Takanashi   +4 more
openaire   +3 more sources

Growth of birefringent crystal α-BaB2O4 by Bridgman method

Materials Letters, 2003
Abstract The growth of novel birefringent crystal α-BaB 2 O 4 by the modified Bridgman method has been reported in this paper. By means of the optimum conditions such as stoichiometric feed materials, sealed platinum crucibles, [001] growth direction, growth rate less than 0.3 mm/h and convex or plane solid–liquid interface with temperature gradient
Hongbing Chen, Haiping Xia, Jinhao Wang, Jianli Zhang, Xinmin Zhang, Jiayue Xu, Shiji Fan   +6 more
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Defects in GaSe grown by Bridgman method

Journal of Microscopy, 2014
SummaryOptical quality GaSe crystals have been grown by vertical Bridgman method. The structural properties and micromorphology of a cleaved GaSe(001) surface have been evaluated by RHEED, SEM and AFM. The cleaved GaSe(001) is atomically flat with as low roughness as ∼0.06 nm excepting local hillock type defects.
K A, Kokh, V V, Atuchin, T A, Gavrilova, A, Kozhukhov, E A, Maximovskiy, L D, Pokrovsky, A R, Tsygankova, A I, Saprykin   +7 more
openaire   +2 more sources