Results 171 to 180 of about 3,896 (209)
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High yield, single crystal ice via the Bridgman method
Review of Scientific Instruments, 2016The surface chemistry of ice and of water is an important topic of study, especially given the role of ice and water in shaping the environment. Although snow, granular, and polycrystalline ice are often used in research, there are applications where large surface areas of a known crystallographic plane are required.
Patrick Bisson +3 more
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Vertical Bridgman Growth Method
2020The vertical Bridgman (VB) technique developed for β-Ga2O3 crystals will be introduced including specific details on the VB crucible material determined by the measurement of the melting temperature of β-Ga2O3 and the VB growth processes of β-Ga2O3 in ambient air.
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Characterization of CdTe crystals grown by the Vertical Bridgman method
2001 IEEE Nuclear Science Symposium Conference Record (Cat. No.01CH37310), 2002CdTe crystals had been grown by the Vertical Bridgman method with diameters from 25 mm up to 75 mm. To obtain stable growth conditions the growth rate and temperature gradient had been adjusted by in-situ temperature monitoring. Several modifications had been applied to improve crystallinity.
M. Fiederle +5 more
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Characterization of CdTe crystals grown by the Vertical Bridgman method
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2003Abstract CdTe crystals have been grown by the Vertical Bridgman method with diameters of 25, 45 and 75 mm. Improvements of the crystallinity could be achieved by reduction of twins and growth of large single crystalline grains up to 40×40 mm2. CdTe:Ge has been grown with resistivities up to 2×1010 Ω cm .
Fiederle, Michael +7 more
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Full encapsulated CdZnTe crystals by the vertical Bridgman method
Journal of Crystal Growth, 2008CdZnTe crystals were grown by the vertical Bridgman technique using boron oxide for preventing material decomposition. The experiments show that a boron oxide layer completely encapsulates the crystal during growth, so that the crystal grows without direct contact with the crucible. The origins of this effect are investigated.
Zha M +5 more
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Growth of bismuth tellurite crystals by vertical Bridgman method
Journal of Crystal Growth, 2005Abstract The growth of bismuth tellurite crystals by the modified vertical Bridgman method has been reported in this paper. The volatilization of melt is avoided by sealing the double-shell platinum crucibles and the cracking of crystals is decreased under smaller temperature gradients in the Bridgman furnace.
Hongbing Chen +4 more
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Deformational twinning in CdTe crystals grown by the Bridgman method
Materials Science and Engineering: B, 2001Abstract The results of the crystal growth of cadmium telluride (CdTe) crystals by the Bridgman method are reported in the present work. A stoichiometric ratio of cadmium and tellurium in the melt as well as cadmium- and tellurium-rich melts are used in the different crystal growth experiments by the Bridgman method.
T.I Milenov, M.M Gospodinov
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Characterization of HgMnTe crystals grown by vertical Bridgman method
Journal of Crystal Growth, 2007Abstract Single crystals of Hg 0.89 Mn 0.11 Te have been successfully grown by vertical Bridgman method at the optimized growth conditions. The X-ray rocking curve shows that the as-grown Hg 1− x Mn x Te possesses high perfection. Hall measurement data suggest that the electronic properties of as-grown wafers satisfy the requirement of detector ...
Zewen Wang +3 more
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Bulk growth of gallium antimonide crystals by Bridgman method
Bulletin of Materials Science, 1990Gallium antimonide crystals were grown by the vertical Bridgman technique. Effects of ampoule diameter and dopant impurities (Te, P and In) on growth were studied. Crystal stoichiometry and homogeneity were verified with electron-probe microanalysis.
U N Roy, S Basu
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Behavior of arsenic in ZnSe grown by a closed Bridgman method
Materials Letters, 2008Abstract High-quality and large-size ZnSe single crystals doped with arsenic (As) have been grown by a closed Bridgman method. Photoluminescence (PL) spectra show bound exciton emission related to As acceptors and strong donor acceptor pair (DAP) emissions in all As-doped ZnSe.
Jifeng Wang +2 more
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