Results 161 to 170 of about 10,194 (252)

Laser-driven proton sources for efficient radiation testing. [PDF]

open access: yesSci Rep
D'Orsi B   +20 more
europepmc   +1 more source

Thermoelectric Gating Organic Electrochemical Transistors Enabled by Printable Ionogels With n‐p Convertible Thermopower

open access: yesAdvanced Science, EarlyView.
A type of thermoelectric ionogels with convertible n‐p thermopowers are demonstrated with Seebeck coefficients ranging from ‐3.61 to +9.74 mV K−1. Thus, thermoelectric gating organic electrochemical transistor is achieved by employing ionogel as thermoelectric modules and ionic dielectrics simultaneously, paving the road to self‐powered, highly ...
Xingyu Hu   +8 more
wiley   +1 more source

Molecular electronic devices based on atomic manufacturing methods. [PDF]

open access: yesMicrosyst Nanoeng
Yao C   +8 more
europepmc   +1 more source

Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing

open access: yesAdvanced Science, EarlyView.
A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee   +9 more
wiley   +1 more source

Memristive Physical Reservoir Computing

open access: yesAdvanced Science, EarlyView.
Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao   +9 more
wiley   +1 more source

Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors

open access: yesAdvanced Science, EarlyView.
 . ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton   +4 more
wiley   +1 more source

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

open access: yesAdvanced Science, EarlyView.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen   +8 more
wiley   +1 more source

Dry-Transferred MoS2 Films on PET with Plasma Patterning for Full-Bridge Strain-Gauge Sensors. [PDF]

open access: yesSensors (Basel)
Kim J   +9 more
europepmc   +1 more source

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