Results 161 to 170 of about 2,548,373 (230)

Polarity-dependent ferroelectric modulations in two-dimensional hybrid perovskite heterojunction transistors. [PDF]

open access: yesNat Commun
Li E   +9 more
europepmc   +1 more source

Human‐Guided Bayesian Optimization Enables High‐Throughput Laser Annealing of Mesoporous SiOx Anodes for Lithium‐Ion Batteries

open access: yesAdvanced Science, EarlyView.
An empirical‐aided active learning framework is developed to optimize high‐throughput laser‐induced photothermal annealing of silicon suboxide anodes. By integrating probabilistic machine learning with empirical domain knowledge, this approach achieves optimal electrochemical performance using limited experiments.
Chaeyoung Park   +3 more
wiley   +1 more source

High encoding-sensitivity vision sensor with complementary nonlinear neuromorphic computing. [PDF]

open access: yesNat Commun
Yang Q   +17 more
europepmc   +1 more source

Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy‐Efficient Physical Reservoir Computing

open access: yesAdvanced Science, EarlyView.
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon   +13 more
wiley   +1 more source

Integration of Reconfigurable p‐Bit and 1R Crossbar Array for Memristive Probabilistic Computing

open access: yesAdvanced Science, EarlyView.
A memristive probabilistic computing system is demonstrated by integrating stochastic p‐bits based on volatile memristors with a 1R crossbar array encoding interaction weights. The system performs weighted‐sum operations across the array and updates p‐bits iteratively.
Keunho Soh   +7 more
wiley   +1 more source

Emergent Freestanding Complex Oxide Membranes for Multifunctional Applications. [PDF]

open access: yesAdv Mater
Li B   +6 more
europepmc   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

open access: yesAdvanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim   +6 more
wiley   +1 more source

Reliability and Stability Issues in Bi2O2Se/β-Bi2SeO5 Field-Effect Transistors. [PDF]

open access: yesACS Nano
Bahrami M   +14 more
europepmc   +1 more source

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