Results 181 to 190 of about 527 (196)
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Signals, Circuits and Systems, 2003. SCS 2003. International Symposium on, 2003
A new CMOS differential amplifier using MOS transistors in weak inversion is presented. Because of the exponential characteristic of a MOS transistor in the subthreshold region, an original linearization technique based on a parallel connection of two differential stages opposite excited and different polarized is implemented.
C. Popa, D. Coada
openaire +1 more source
A new CMOS differential amplifier using MOS transistors in weak inversion is presented. Because of the exponential characteristic of a MOS transistor in the subthreshold region, an original linearization technique based on a parallel connection of two differential stages opposite excited and different polarized is implemented.
C. Popa, D. Coada
openaire +1 more source
0.4 V fully differential current conveyor using multiple-input bulk-driven MOST technique
Microelectronics Journal, 2019Montree Kumngern
exaly
Cryogenic MOS Transistor Model
IEEE Transactions on Electron Devices, 2018Farzan Jazaeri +2 more
exaly
Low-voltage bulk-driven rectifier for biomedical applications
Microelectronics Journal, 2013Fabian Khateb, Spyridon Vlassis
exaly
Gate controlled bulk-barrier mechanism in an MOS power transistor
IEE Proceedings I: Solid State and Electron Devices, 1987A Mccowen, K Board
exaly
Compact Modeling of Drain-Extended MOS Transistor Using BSIM-BULK Model
Communications in Computer and Information Science, 2019R C Gurjar, Shivendra Singh Parihar
exaly
Radiation dosimeter based on floating gate MOS transistor
Radiation Effects and Defects in Solids, 1991N Nedev, J Kassabov
exaly