Results 181 to 190 of about 2,722,885 (226)

Functional MXene Inks for Printed Electronics: Chemistry, Rheology, and Devices

Advanced Science, EarlyView.
Functional MXene inks are emerging as building blocks for MXetronics, connecting MXene synthesis, surface functionalization, ink formulation, and advanced printing with device‐level applications. This review maps how composition, stability, rheology, and processability govern printed structures and enable high‐performance sensors, energy‐storage ...
Shahzaib Ali, Faisal Shahzad, Hamza Hussain, Muhammad Abbas, Dae‐Hyun Cho, Doyoung Byun, Hassan A. Arafat   +6 more
wiley   +1 more source

Emergent Freestanding Complex Oxide Membranes for Multifunctional Applications. [PDF]

Adv Mater
Li B, Liu Y, Liu J, See JSY, Xing K, Qi DC, Renshaw Wang X.   +6 more
europepmc   +1 more source

Solvent‐Desorption‐Induced Formation of a Long‐Period Polymorph Yielding a High‐Performance Porphyrin‐Based Organic Semiconductor

Advanced Science, EarlyView.
Solvent‐desorption‐induced structural transformation of 5,15‐bisphenyl‐tetrabenzoporphyrin generates a long‐period polymorph, in which the π‐stacking direction rotates by 90° between adjacent layers within the crystal while largely retaining crystallographic integrity.
Kazuya Miyazaki, Keitaro Yamamoto, Mitsuaki Yamauchi, Yoshiyuki Mizuhata, Hiroshi Matsuda, Nobutaka Shioya, Takeshi Hasegawa, Hiroko Yamada   +7 more
wiley   +1 more source

Overview of the Properties and Formation Process of Interface Traps in MOS and Linear Bipolar Devices. [PDF]

Micromachines (Basel)
Ren Y, Zhu M, Dai X, Li L, Liu M.
europepmc   +1 more source

Ultralow‐Energy Analog Reservoir Computing via Reconfigurable 2‐Transistor Memory

Advanced Science, EarlyView.
This work presents a reconfigurable reservoir‐computing platform based on an oxide InSnZnO two‐transistor cell in which a hold bias selects volatile relaxation for the reservoir or quasi‐non‐volatile multilevel storage for the readout. Multi‐level hold‐bias kernel tune relaxation currents to generate diverse time constants, enriching reservoir states ...
Jeong‐Min Park, Yeong‐In Kim, Jeong Hyun Yoon, Sein Lee, Wooho Ham, Dongyun Lee, Junseo Lee, Dongwook Shin, Kyung Jun Park, Seok Daniel Namgung, Min‐Kyu Song, Jang‐Yeon Kwon   +11 more
wiley   +1 more source

Reliability and Stability Issues in Bi2O2Se/β-Bi2SeO5 Field-Effect Transistors. [PDF]

ACS Nano
Bahrami M, Davoudi MR, Verdianu A, Khakbaz P, Waldhoer D, Wilhelmer C, Tang J, Tan C, Nazir A, Zheng Y, Liu C, Peng H, Knobloch T, Waltl M, Grasser T.   +14 more
europepmc   +1 more source

Highly Stable and Non‐Volatile Optoelectronic Synapses for Sensing, Memory, and Computing Enabled by a Deep‐Potential Floating Gate

Advanced Science, EarlyView.
A deep‐potential metal floating gate integrates electrical programming, optical partial erasure, and synaptic weight modulation in a MoS2/h‐BN/Au transistor. The device provides a 97.6 V memory window, retention beyond 3000 s, endurance over 1600 cycles, and reproducible operation after 200 days of ambient storage.
Shuo Lei, Shichen Zhang, Zhipeng Zheng, Miao Cai, Shun Tang, Xuguang Guo, Yiming Zhu   +6 more
wiley   +1 more source

Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution. [PDF]

Nanomicro Lett
Lee JH, Kim JY, Lee HJ, Choi SJ, Lee YJ, Jang HW.   +5 more
europepmc   +1 more source

Hardware Acceleration of Stochastic Neural Networks Enabled by Bit‐Cell Level Co‐Design of Magnetic Tunnel Junctions

Advanced Science, EarlyView.
An MTJ‐based probabilistic processing‐in‐memory architecture unites nonvolatile storage, local entropy generation, and stochastic computation within each memory cell. Stored multi‐bit weights are converted directly into programmable stochastic bitstreams, enabling neural‐network inference, adaptive Ising optimization, and uncertainty‐aware Bayesian ...
Qiuyuan Wang, Dooyong Koh, Brooke McGoldrick, Tudor Mocioi, Yabin Fan, Marc Baldo, Luqiao Liu   +6 more
wiley   +1 more source