Results 181 to 190 of about 10,194 (252)

Van Der Waals Ferroionic CuInP₂S₆: Emergent Properties and Device Application. [PDF]

Materials (Basel)
Li M, Peng Z, Zhang D, Wang X, Yang W, Liang Z, Jiang X.   +6 more
europepmc   +1 more source

Low power/low voltage techniques for analog CMOS circuits [PDF]

, 2004
Cassia, Marco
core  

All‐Solution‐Processed Perovskite Light‐Emitting Transistors Enabled by a Fully Organic Architecture

Advanced Electronic Materials, EarlyView.
Fully solution‐processed light‐emitting transistors based on CsPbBr3 perovskite nanocrystals (Pe‐LETs) are demonstrated using an all‐organic platform. By optimizing film formation and device integration, the Pe‐LETs achieve bright green emission with excellent color purity and a peak external quantum efficiency of 4.17 × 10−3 %, marking a step forward ...
Kelment Zahoaliaj, Alice Fappani, Francesca Pallini, Valentina Bellotti, Nicolò Quaresima, Margherita Bolognesi, Mario Prosa, Luca Beverina, Stefano Toffanin   +8 more
wiley   +1 more source

γ Radiation Effects on Transition Metal Dichalcogenides: A Review of Defect Mechanisms and Device Implications. [PDF]

ACS Omega
Kreusch D, Araujo-Moreira FM.
europepmc   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Recent advances in CMOS-compatible synthesis and integration of 2D materials. [PDF]

Nano Converg
Katiyar AK, Choi J, Ahn JH.
europepmc   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source

Laser-Induced Photothermal Conversion to Hemispherical MoS₂ Enabling Non-Contact Self-Powering Image Sensor. [PDF]

Adv Sci (Weinh)
Kim CJ, Choi KH, Lim T, Cha S, Lee YH, Song DS, Lee YJ, Hong S, Kim JH, Lee SH, Kang S, Song W, Myung S, Lim J, Lee SS, Ahn KS, Yim S, Hong BH, Park S.   +18 more
europepmc   +1 more source

Toward Stable and High‐Performance Metal Halide Perovskite Field‐Effect Transistors

Advanced Electronic Materials, EarlyView.
This ToC illustrates the evolution from unstable 3D perovskites with ion migration toward advanced 2D, mixed‐halide, and vacancy‐ordered structures, culminating in stable, high‐performance perovskite field‐effect transistors. ABSTRACT There is a critical need for high‐quality perovskite semiconductor films to enable highly stable field‐effect ...
Muhammad Danish Danial bin Zulkifli, Goutham Raj Perumallapelli, Maria Vasilopoulou, Muhammad Nafie bin Jakariah, Muhammad Fazri bin Jasmin, Aliff Muhaimin bin Kamaruzaman, Abd. Rashid bin Mohd Yusoff, Ravindra Naik Bukke   +7 more
wiley   +1 more source

Challenges and prospects of 2D electronics for future monolithic complementary field-effect transistors. [PDF]

Nat Commun
Islam MM, Cho Y, Sen A, Bisht P, Shim J, Oh JO, Park G, Rossi A, Lee H, Jiang L, Coletti C, Park BI, Chae H, Shin S, Park H, Kim S.   +15 more
europepmc   +1 more source