Results 191 to 200 of about 10,194 (252)

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

Advanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source

Memristor Emulator Circuits: Recent Advances in Design Methodologies, Healthcare Applications, and Future Prospects. [PDF]

Micromachines (Basel)
Neifar A, Barraj I, Mestiri H, Masmoudi M.   +3 more
europepmc   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Pressure-dependent current transport in vertical BP/MoS₂ heterostructures. [PDF]

Heliyon
Durante O, De Stefano S, Mazzotti A, Viscardi L, Giubileo F, Kharsah O, Daniel L, Sleziona S, Schleberger M, Di Bartolomeo A.   +9 more
europepmc   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

1 V Electronically Tunable Differential Difference Current Conveyors Using Multiple-Input Operational Transconductance Amplifiers. [PDF]

Sensors (Basel)
Kumngern M, Khateb F, Kulej T, Langhammer L.   +3 more
europepmc   +1 more source

Aging and Electrical Stability of DNTT Honey‐Gated OFETs

Advanced Electronic Materials, EarlyView.
DNTT honey‐gated organic transistors were fabricated and evaluated to assess short‐ and long‐term stability under electrical stress and aging. Short‐term transfer measurements (five days, 40 sweeps/day) showed minimal parameter shift, while extended measurements revealed gradual degradation over weeks.
Douglas H. Vieira, Ana C. de Paula, José D. F. Dias, Maria H. L. O. Fung, Rafael Furlan de Oliveira, Gabriel L. Nogueira, Keli F. Seidel, José P. M. Serbena, Neri Alves   +8 more
wiley   +1 more source

Polyoxometalates (POMs) Memristors/Neuromorphic Devices: From Structure Engineering to Material and Function Integration. [PDF]

Nanomaterials (Basel)
Hu J, Xu S, Meng Y.
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Scalable transition metal dichalcogenide memtransistor arrays with Schottky-barrier control for energy-efficient artificial neural networks. [PDF]

Nat Commun
Hou X, Zhang W, Duan S, Jin T, Geng X, Lin M, Cai Y, Mao J, Luo Y, Zhu J, Lin J, Chen W.   +11 more
europepmc   +1 more source