Results 191 to 200 of about 2,722,885 (226)

Analytical Modeling on Investigating the Electric Field Shift Behavior of GaN Vertical FinFETs. [PDF]

ACS Omega
Michel A, Syamsul M, Arun Samuel TS, Anand IV, George NM, Nirmal D.   +5 more
europepmc   +1 more source

Modifying Electrochemical Doping in Light‐Emitting Electrochemical Cells With Gold Nanoparticles

Advanced Science, EarlyView.
This study shows that gold nanoparticles placed at an electrode can control how electrochemical doping occurs in organic electronic devices. Particularly, in light‐emitting electrochemical cells, by shifting the light‐emitting region, device efficiency is improved without altering the emissive material. This approach provides a simple and effective way
Ajay K. Poonia, Anton Kirch, Joan Ràfols‐Ribé, Lucrezia Catanzaro, Anish Rao, Karol Kołątaj, Vittorio Scardaci, Giuseppe Compagnini, Guillermo P. Acuna, Ludvig Edman, Nicolò Maccaferri   +10 more
wiley   +1 more source

Recrystallization-Driven Formation of Single-Crystalline MoS₂ by Metal-Organic Chemical Vapor Epitaxy. [PDF]

Small Methods
Kandybka I, Kumar P, Silva HM, Groven B, Mehta AN, Shi Y, Smets Q, Schram T, Singh DP, Banerjee S, Lockhart de la Rosa CJ, Kar GS, Morin P, Delabie A.   +13 more
europepmc   +1 more source

Molecular Rectification: Mechanisms, Modulation Strategies, and Device Realization

Advanced Science, EarlyView.
This review focuses on molecular rectification, from its fundamental mechanisms and modulation strategies to device realization. It summarizes the theoretical framework, modulation strategies, fabrication techniques, characterization methods, and modeling and simulation of molecular rectifiers, while discussing challenges and future directions for ...
Junnan Guo, Shufan Song, Wenhui Fang, Jifeng Tang, Wenhao Li, Weikang Wu, Shishen Yan, Hui Li, Lishu Zhang   +8 more
wiley   +1 more source

Impact of the Schottky Barrier and Contact-Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS₂ Transistors. [PDF]

Small Sci
Panasci SE, Schilirò E, Greco G, Fiorenza P, Vivona M, Di Franco S, Roccaforte F, Esposito F, Bosi M, Attolini G, Píš I, Bondino F, Pedio M, Madonia A, Cannas M, Agnello S, Seravalli L, Giannazzo F.   +17 more
europepmc   +1 more source

Magnetoelectric Multiferroics for the Next‐Generation Ultralow‐Power Electronics

Advanced Science, EarlyView.
Magnetoelectric coupling provides a unifying route from electric‐field control of magnetic order to non‐volatile MeRAM, MESO logic, and emerging antiferromagnetic and magnonic devices. By connecting switching physics with device benchmarks, material platforms, and integration strategies, distinctive technological opportunities are identified alongside ...
Yang Liu, Yunlong Sun, Hao Luo, Duoduo Zhao, Yuhan Zeng, Xuzihan Zhang, Zhewei Liu, Hao Peng, Zhijing Zhang, Jack Yang, Ji Zhang, Danyang Wang, Junjie Shi, Sean Li   +13 more
wiley   +1 more source

Buried Unstrained Germanium Channels: A Lattice-Matched Platform for Quantum Technology. [PDF]

Adv Sci (Weinh)
Costa D, Del Vecchio P, Hudson K, Stehouwer LEA, Tosato A, Degli Esposti D, Calvi V, Moreschini L, Lodari M, Bosco S, Scappucci G.   +10 more
europepmc   +1 more source

Interfacial Polarization Dynamics of Nitrile Dipoles in Organic Synaptic Transistors for Acoustic Reservoir Computing

Advanced Science, EarlyView.
Interfacial nitrile dipoles unlock tunable memory in organic synaptic transistors through competing polarization and relaxation. Their finite time dynamics are directly harnessed for acoustic reservoir computing, delivering 97.17% spoken digit recognition, reliable speech emotion and snoring recognition, and an ultralow event energy of only 50 aJ ...
Yutian Liu, Jiale Huang, Haoran Fang, Jichen Zhao, Fan Ye, Bo Huang, Ruibin Liang, Jintao Xu, Fanqi Wang, Mingjun Huang, Zhiming Lin, Shuguang Zhang, Linfeng Lan, Junbiao Peng   +13 more
wiley   +1 more source

Fe-doped MoS₂ monolayers for CO, H₂S, and NO₂ detection: towards advanced environmental sensors. [PDF]

RSC Adv
Hoang NV, Trieu TQ.
europepmc   +1 more source

Multifunctional Vertical Bulk‐Heterojunction Transistors With Amorphous GaOx for Neuromorphic Perception‐to‐Decision

Advanced Science, EarlyView.
A multifunctional vertical bulk‐heterojunction transistor (MVBT) with amorphous GaOx integrates four functionalities within a single neuromorphic device. Gate‐source operation enables 254 nm deep‐ultraviolet sensing and threshold neuronal firing, whereas three‐terminal operation supports broadband UV–vis‐NIR synaptic functions and bias‐controlled ...
Jinkui Si, Qiong Zhuang, Rengjian Yu, Junling Zhou, Lan Yang, Changjie Zhou, Huili Zhu, Minshuai Wang, Xiaomei Cai, Qiubao Lin, Wangying Xu, Shuqiong Lan, Huipeng Chen   +12 more
wiley   +1 more source