Results 211 to 220 of about 10,194 (252)
Recent advances in ferroelectric materials, devices, and in-memory computing applications. [PDF]
Nano ConvergHwang H, Youn S, Kim H.
europepmc +1 more source
Some of the next articles are maybe not open access.
Related searches:
Related searches:
The experimental results of the bulk-driven quasi-floating-gate MOS transistor
AEU - International Journal of Electronics and Communications, 2015Abstract This brief presents the experimental results of the new principle technique named bulk-driven quasi-floating-gate (BD-QFG) (Khateb and Khatib, 2013 [27] ) MOS transistor (MOST) that was presented in AEU – International Journal of Electronics and Communications in year 2014.
Fabian Khateb
exaly +4 more sources
Multiple-Input Bulk-Driven MOS Transistor for Low-Voltage Low-Frequency Applications
Circuits, Systems, and Signal Processing, 2018This brief presents the principle and the first experimental results of the multiple-input bulk-driven (MIBD) MOS transistor (MOST) suitable for extremely low-voltage low-power integrated circuits. The MIBD MOST offers significant reduction in circuit complexity, power consumption and extension of the input common-mode range (ICMR).
Fabian Khateb +2 more
exaly +3 more sources
Low-voltage bulk-driven QFG-regulated self-cascode super MOS transistor
2016 13th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2016A bulk-driven super MOS transistor (BD-SMT) for low voltage operation is presented. The proposed transistor achieves a high effective transconductance (G m(eff) ), high effective drain impedance (R D(eff) ) and low effective source impedance (R S(eff) ). BD-SMT is designed based on regulated self-cascode and negative feedback techniques. The transistor
Varakorn Kasemsuwan
exaly +3 more sources
Signals, Circuits and Systems, 2003. SCS 2003. International Symposium on, 2003
A new CMOS differential amplifier using MOS transistors in weak inversion is presented. Because of the exponential characteristic of a MOS transistor in the subthreshold region, an original linearization technique based on a parallel connection of two differential stages opposite excited and different polarized is implemented.
C. Popa, D. Coada
openaire +2 more sources
A new CMOS differential amplifier using MOS transistors in weak inversion is presented. Because of the exponential characteristic of a MOS transistor in the subthreshold region, an original linearization technique based on a parallel connection of two differential stages opposite excited and different polarized is implemented.
C. Popa, D. Coada
openaire +2 more sources
AEU - International Journal of Electronics and Communications, 2019
This brief presents the first experimental results of the multiple-input bulk-driven quasi-floating-gate (MI-BD-QFG) MOS transistor (MOST) which is suitable for low-voltage (LV) low-power (LP) integrated circuits design.
Fabian Khateb +2 more
exaly +2 more sources
This brief presents the first experimental results of the multiple-input bulk-driven quasi-floating-gate (MI-BD-QFG) MOS transistor (MOST) which is suitable for low-voltage (LV) low-power (LP) integrated circuits design.
Fabian Khateb +2 more
exaly +2 more sources
IoT Gateway Bulk Driven Quasi Floating PLL Logic In 5G Wireless Communication
2023 4th International Conference on Data Analytics for Business and Industry (ICDABI), 2023Modern radio communication equipment makes significant use of Phase Locked Loop (PLL) frequency synthesizers. Users can choose from a set of frequencies to generate a set of frequencies based on one reference. We use conventional PLLs using complementary
T.Kalavathidevi +6 more
semanticscholar +1 more source
Bulk-driven inverter configuration and its application for implementing ring oscillator
2023 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS), 2023A digital inverter based on CMOS design is implemented using the bulk-driven (BD) technique for both floating gate (FG) and quasi floating gate (QFG) MOS.
Mohd. Javed +2 more
semanticscholar +1 more source
Design of Low Power High Gain Structure of Bulk Driven OTA
2022 2nd International Conference on Emerging Frontiers in Electrical and Electronic Technologies (ICEFEET), 2022In this paper, a non-conventional design is proposed to increase the gain by boosting the impedance at the output stage of a bulk-driven based OTA.
Astha Dadheech, N. Raj, Divyang Rawal
semanticscholar +1 more source