Results 211 to 220 of about 2,548,373 (230)
Some of the next articles are maybe not open access.
The experimental results of the bulk-driven quasi-floating-gate MOS transistor
AEU - International Journal of Electronics and Communications, 2015Abstract This brief presents the experimental results of the new principle technique named bulk-driven quasi-floating-gate (BD-QFG) (Khateb and Khatib, 2013 [27] ) MOS transistor (MOST) that was presented in AEU – International Journal of Electronics and Communications in year 2014.
Fabian Khateb
exaly +4 more sources
Multiple-Input Bulk-Driven MOS Transistor for Low-Voltage Low-Frequency Applications
Circuits, Systems, and Signal Processing, 2018This brief presents the principle and the first experimental results of the multiple-input bulk-driven (MIBD) MOS transistor (MOST) suitable for extremely low-voltage low-power integrated circuits. The MIBD MOST offers significant reduction in circuit complexity, power consumption and extension of the input common-mode range (ICMR).
Costas Psychalinos +2 more
exaly +2 more sources
Low-voltage bulk-driven QFG-regulated self-cascode super MOS transistor
2016 13th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2016A bulk-driven super MOS transistor (BD-SMT) for low voltage operation is presented. The proposed transistor achieves a high effective transconductance (G m(eff) ), high effective drain impedance (R D(eff) ) and low effective source impedance (R S(eff) ). BD-SMT is designed based on regulated self-cascode and negative feedback techniques. The transistor
Varakorn Kasemsuwan, Apirak Suadet
exaly +2 more sources
1.2-V fully differential OTA-C lowpass filter based on bulk-driven MOS transistors
2011 20th European Conference on Circuit Theory and Design (ECCTD), 2011An OTA-C filter implementation suited to low-voltage operation is presented. An operational transconductance amplifier (OTA) based on a bulk-driven input stage with enhanced DC gain and bandwidth was designed and included in a 1.2-V tunable fully differential second-order OTA-C lowpass filter.
Juan M. Carrillo +3 more
openaire +1 more source
Signals, Circuits and Systems, 2003. SCS 2003. International Symposium on, 2003
A new CMOS differential amplifier using MOS transistors in weak inversion is presented. Because of the exponential characteristic of a MOS transistor in the subthreshold region, an original linearization technique based on a parallel connection of two differential stages opposite excited and different polarized is implemented.
C. Popa, D. Coada
openaire +1 more source
A new CMOS differential amplifier using MOS transistors in weak inversion is presented. Because of the exponential characteristic of a MOS transistor in the subthreshold region, an original linearization technique based on a parallel connection of two differential stages opposite excited and different polarized is implemented.
C. Popa, D. Coada
openaire +1 more source
0.4 V fully differential current conveyor using multiple-input bulk-driven MOST technique
Microelectronics Journal, 2019Montree Kumngern
exaly
Radiation dosimeter based on floating gate MOS transistor
Radiation Effects and Defects in Solids, 1991N Nedev, J Kassabov
exaly
Compact Modeling of Drain-Extended MOS Transistor Using BSIM-BULK Model
Communications in Computer and Information Science, 2019R C Gurjar, Shivendra Singh Parihar
exaly
Low-voltage bulk-driven rectifier for biomedical applications
Microelectronics Journal, 2013Fabian Khateb, Spyridon Vlassis
exaly

