Results 201 to 210 of about 2,722,885 (226)

Strain-engineered Ge-source double-gate TFET with Si/SiGe/Si channel for low-power and THz frequency applications. [PDF]

Sci Rep
Prakash EB, Ray A, Bordoloi S.
europepmc   +1 more source

Gated MoS₂/SiN nanochannel for tunable ion transport and protein translocation. [PDF]

J Nanobiotechnology
Weng S, Douaki A, Tsutsui M, Lanzavecchia G, Sapunova A, Iannetti L, Giacomello A, Krahne R, Garoli D.   +8 more
europepmc   +1 more source

MOSFET-Based Voltage Reference Circuits in the Last Decade: A Review. [PDF]

Micromachines (Basel)
Moisello E, Bonizzoni E, Malcovati P.
europepmc   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS. [PDF]

Adv Mater
Cho H, Huang J, Yang S, Im S, Park S, Yeo J, Kim S, Do G, Zhu W, Shin S, Lee J, Shin Y, Lee DS, Jeong HY, Park TE, Kang J, Ko K, Suh J.   +17 more
europepmc   +1 more source

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The Experimental Results of the Bulk-Driven Quasi-Floating-Gate MOS Transistor

AEU - International Journal of Electronics and Communications, 2015
Abstract This brief presents the experimental results of the new principle technique named bulk-driven quasi-floating-gate (BD-QFG) (Khateb and Khatib, 2013 [27] ) MOS transistor (MOST) that was presented in AEU – International Journal of Electronics and Communications in year 2014.
Fabian Khateb
exaly   +3 more sources

Low-Voltage Bulk-Driven QFG-Regulated Self-Cascode Super MOS Transistor

2016 13th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2016
A bulk-driven super MOS transistor (BD-SMT) for low voltage operation is presented. The proposed transistor achieves a high effective transconductance (G m(eff) ), high effective drain impedance (R D(eff) ) and low effective source impedance (R S(eff) ). BD-SMT is designed based on regulated self-cascode and negative feedback techniques. The transistor
Varakorn Kasemsuwan, Apirak Suadet
exaly   +2 more sources

1.2-V Fully Differential OTA-C Lowpass Filter Based on Bulk-Driven MOS Transistors

2011 20th European Conference on Circuit Theory and Design (ECCTD), 2011
An OTA-C filter implementation suited to low-voltage operation is presented. An operational transconductance amplifier (OTA) based on a bulk-driven input stage with enhanced DC gain and bandwidth was designed and included in a 1.2-V tunable fully differential second-order OTA-C lowpass filter.
Juan M Carrillo, Guido Torelli, J F Duque-Carrillo   +2 more
exaly   +2 more sources