Results 171 to 180 of about 527 (196)

Laser-Induced Photothermal Conversion to Hemispherical MoS₂ Enabling Non-Contact Self-Powering Image Sensor. [PDF]

Adv Sci (Weinh)
Kim CJ, Choi KH, Lim T, Cha S, Lee YH, Song DS, Lee YJ, Hong S, Kim JH, Lee SH, Kang S, Song W, Myung S, Lim J, Lee SS, Ahn KS, Yim S, Hong BH, Park S.   +18 more
europepmc   +1 more source

γ Radiation Effects on Transition Metal Dichalcogenides: A Review of Defect Mechanisms and Device Implications. [PDF]

ACS Omega
Kreusch D, Araujo-Moreira FM.
europepmc   +1 more source

The electrical characteristics of Nanosheet FET within the quasi-ballistic transport: Role of scattering and temperature variation. [PDF]

PLoS One
Shubham, Pandey RK.
europepmc   +1 more source

Pressure-dependent current transport in vertical BP/MoS₂ heterostructures. [PDF]

Heliyon
Durante O, De Stefano S, Mazzotti A, Viscardi L, Giubileo F, Kharsah O, Daniel L, Sleziona S, Schleberger M, Di Bartolomeo A.   +9 more
europepmc   +1 more source

Fast prototyping of memristors for ReRAMs and neuromorphic computing.

Nanoscale
Marraccini G, Strangio S, Dimaggio E, Sargeni R, Pieri F, Sozen Y, Castellanos-Gomez A, Fiori G.   +7 more
europepmc   +1 more source

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The experimental results of the bulk-driven quasi-floating-gate MOS transistor

AEU - International Journal of Electronics and Communications, 2015
Abstract This brief presents the experimental results of the new principle technique named bulk-driven quasi-floating-gate (BD-QFG) (Khateb and Khatib, 2013 [27] ) MOS transistor (MOST) that was presented in AEU – International Journal of Electronics and Communications in year 2014.
Fabian Khateb
exaly   +4 more sources

Multiple-Input Bulk-Driven MOS Transistor for Low-Voltage Low-Frequency Applications

Circuits, Systems, and Signal Processing, 2018
This brief presents the principle and the first experimental results of the multiple-input bulk-driven (MIBD) MOS transistor (MOST) suitable for extremely low-voltage low-power integrated circuits. The MIBD MOST offers significant reduction in circuit complexity, power consumption and extension of the input common-mode range (ICMR).
Costas Psychalinos, Montree Kumngern, Tomasz Kulej   +2 more
exaly   +2 more sources

Low-voltage bulk-driven QFG-regulated self-cascode super MOS transistor

2016 13th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2016
A bulk-driven super MOS transistor (BD-SMT) for low voltage operation is presented. The proposed transistor achieves a high effective transconductance (G m(eff) ), high effective drain impedance (R D(eff) ) and low effective source impedance (R S(eff) ). BD-SMT is designed based on regulated self-cascode and negative feedback techniques. The transistor
Varakorn Kasemsuwan, Apirak Suadet
exaly   +2 more sources

1.2-V fully differential OTA-C lowpass filter based on bulk-driven MOS transistors

2011 20th European Conference on Circuit Theory and Design (ECCTD), 2011
An OTA-C filter implementation suited to low-voltage operation is presented. An operational transconductance amplifier (OTA) based on a bulk-driven input stage with enhanced DC gain and bandwidth was designed and included in a 1.2-V tunable fully differential second-order OTA-C lowpass filter.
Juan M. Carrillo, Miguel Angel Domínguez, J. Francisco Duque-Carrillo, Guido Torelli   +3 more
openaire   +1 more source