Results 41 to 50 of about 2,722,885 (226)

A 328 nW, 0.45 V Current Differencing Transconductance Amplifier and Its Application in a Current-Mode Universal Filter

Applied Sciences
This paper presents a low-voltage, low-power current differencing transconductance amplifier (CDTA) utilizing the bulk-driven MOS transistor technique in the subthreshold region for reduced voltage and power consumption.
Fabian Khateb, Montree Kumngern, Tomasz Kulej, Jiri Vavra   +3 more
doaj   +1 more source

Le transistor-thyristor métal-oxyde-semiconducteur (T2 MOS)

, 1985
A new MOS gate-controlled planar device is proposed. It's electrical characteristics could be either : i) MOS transistor like, ii) MOS thyristor like or iii) a combination of the two previous devices. This device is called the « MOS transistor-thyristor »
Rossel, P., Sanchez, Jean-Louis, Charitat, G., P. Rossel, J.L. Sanchez, H. Tranduc, M. Gharbi, G. Charitat, Tranduc, Henri, Gharbi, Mohamed   +9 more
core   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source

0.5-V High-Order Universal Filter for Bio-Signal Processing Applications

Applied Sciences
In this paper, a novel multiple-input operational transconductance amplifier (MI-OTA) is proposed. The MI-OTA can be obtained by using the multiple-input bulk-driven MOS transistor (MIBD MOST) technique.
Montree Kumngern, Fabian Khateb, Tomasz Kulej, Somkiat Lerkvaranyu   +3 more
doaj   +1 more source

Efeitos da saturação de velocidade em aplicações de alta frequência do Mosfet [PDF]

, 2003
Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia ElétricaEste trabalho apresenta análise dos efeitos da saturação da velocidade dos portadores e do campo elétrico transversal na ...
Bork, Briam Cavalca
core  

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Modelo compacto de não-linearidades em transistores MOS: [dissertação] [PDF]

, 2006
Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia Elétrica.Neste trabalho, é proposto um modelo compacto para não-linearidades em transistores MOS desenvolvido com base nas ...
Silva, Pablo Dutra da
core  

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Tracking Battery Microstructural Degradation Through Directional Thermal Transport Signatures

Advanced Functional Materials, EarlyView.
In lithium‐ion batteries, heat conduction varies between the through‐plane and in‐plane directions because of the cell's layered structure. Therefore, cell degradation influences thermal conductivity in each direction uniquely due to detailed microstructural and compositional changes.
Mohammad Shoghi Tekmedash, Rituparna Mohanty, Jack Leber, David Nageb, Mirella Richard, Sharan Singh, Amin Reihani   +6 more
wiley   +1 more source

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS₂ Memory Transistor. [PDF]

Adv Sci (Weinh)
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Jeong Y, Wang H, Tordi P, Hu YC, Tamayo A, Wu B, Ahn HS, Sofer Z, Jung JH, Bonini M, Samorì P.   +10 more
europepmc   +2 more sources