Results 21 to 30 of about 527 (196)

Laser‐Induced Graphene from Waste Almond Shells

open access: yesAdvanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova   +9 more
wiley   +1 more source

Low-Voltage Mixed-Mode Analog Filter Using Multiple-Input Multiple-Output Operational Transconductance Amplifiers

open access: yesIEEE Access
This paper presents a novel mixed-mode, low-power, 1 V analog filter that uses multiple-input multiple-output operational transconductance amplifiers (MIMO-OTAs).
Montree Kumngern   +2 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

A 0.3 V Current Differencing Buffered Amplifier and Its Application in Current-Mode Third-Order Low-Pass Filters

open access: yesApplied Sciences
This paper introduces an innovative low-voltage, low-power current differencing buffered amplifier (CDBA). The proposed CDBA utilizes a bulk-driven MOS transistor operating in the subthreshold region, allowing it to function effectively at low supply ...
Fabian Khateb   +2 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

1-V Mixed-Mode Universal Filter Using Differential Difference Current Conveyor Transconductance Amplifiers

open access: yesApplied Sciences
This paper presents a mixed-mode universal filter using differential difference current conveyor transconductance amplifiers (DDCCTA). Despite using a minimum number of MOS differential pairs, the proposed DDCCTA is a multiple-input, multiple-output ...
Montree Kumngern   +2 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Design of Shadow Filter Using Low-Voltage Multiple-Input Operational Transconductance Amplifiers

open access: yesApplied Sciences
This paper introduces shadow filters that employ multiple-input operational transconductance amplifiers (MI-OTAs) as the active component. Two configurations of shadow filters are proposed.
Montree Kumngern   +3 more
doaj   +1 more source

Chemical State Detection and Charge Transfer in Complex Oxide Heterostructures via In Situ Auger Electron Spectroscopy

open access: yesAdvanced Functional Materials, EarlyView.
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian   +1 more
wiley   +1 more source

A 328 nW, 0.45 V Current Differencing Transconductance Amplifier and Its Application in a Current-Mode Universal Filter

open access: yesApplied Sciences
This paper presents a low-voltage, low-power current differencing transconductance amplifier (CDTA) utilizing the bulk-driven MOS transistor technique in the subthreshold region for reduced voltage and power consumption.
Fabian Khateb   +3 more
doaj   +1 more source

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