Results 21 to 30 of about 2,548,373 (230)

31.3 nW, 0.5 V Bulk-Driven OTA for Biosignal Processing

IEEE Access, 2023
This paper presents a new extremely low-voltage low-power bulk-driven (BD) operational transconductance amplifier (OTA) realized for low frequency biosignal processing. The CMOS structure of the OTA utilizes bulk-driven and self-cascode techniques in the
Montree Kumngern, Tomasz Kulej, Fabian Khateb   +2 more
doaj   +1 more source

AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]

, 2011
Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al₂O₃ as a gate dielectric and surface
Wasige, E., S. Taking, E. Wasige, D. MacFarlane, MacFarlane, D., Taking, S.   +5 more
core   +1 more source

IMPROVING BANDWIDTH OF FLIPPED VOLTAGE FOLLOWER USING GATE-BODY DRIVEN TECHNIQUE [PDF]

Journal of Engineering Science and Technology, 2017
In this paper, a new approach to enhance the bandwidth of flipped voltage follower is explored. The proposed approach is based on gate-body driven technique.
VANDANA NIRANJAN, ASHWANI KUMAR, SHAIL BALA JAIN   +2 more
doaj  

0.3-V 36-nW Voltage-Mode First-Order Filter Based on Multiple-Input Operational Transconductance Amplifier

IEEE Access
This paper presents an electronically tunable, voltage-mode first-order filter based on multiple-input operational transconductance amplifiers (MI-OTAs). The filter circuit consists of two MI-OTAs and a single capacitor.
Montree Kumngern, Tomasz Kulej, Fabian Khateb   +2 more
doaj   +1 more source

Low-voltage bulk-driven flipped voltage follower-based transconductance amplifier [PDF]

, 2022
A low voltage high performance design of operational transconductance amplifier is proposed in this paper. The proposed architecture is based on bulk driven quasi-floating gate metal oxide semiconductor field effect transistor (MOSFET) which supports low
Nikhil Raj, Bharti Chourasia, Raj, Nikhil, Rajesh Durgam, Tamil, Subramanian, Subramanian Tami, Rajesh, Durgam, Chourasia, Bharti   +7 more
core   +1 more source

Modelo do descasamento (Mismatch) entre transistores MOS: [tese] [PDF]

, 2008
Tese (Doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-graduação em Engenharia ElétricaDiversos modelos teóricos para o descasamento entre dispositivos na tecnologia MOS foram propostos desde a década de '80, sendo
Klimach, Hamilton
core  

Laser‐Induced Graphene from Waste Almond Shells

Advanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova, Anna Chiara Bressi, Marina Galliani, Attilio Marino, Gianni Ciofani, Eduardo Machado‐Charry, Hilda Gomez Bernal, Alessandra Francini, Luca Sebastiani, Francesco Greco   +9 more
wiley   +1 more source

Low-Voltage Mixed-Mode Analog Filter Using Multiple-Input Multiple-Output Operational Transconductance Amplifiers

IEEE Access
This paper presents a novel mixed-mode, low-power, 1 V analog filter that uses multiple-input multiple-output operational transconductance amplifiers (MIMO-OTAs).
Montree Kumngern, Fabian Khateb, Tomasz Kulej   +2 more
doaj   +1 more source

Um modelo eficiente do transistor MOS para o projeto de circuitos VLSI: [dissertação] [PDF]

, 2007
Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia Elétrica.Neste trabalho é detalhada a implementação do modelo ACM do transistor MOS no simulador elétrico ELDO (Mentor Graphics).
Siebel, Osmar Franca
core  

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source