Results 21 to 30 of about 2,722,885 (226)

31.3 nW, 0.5 V Bulk-Driven OTA for Biosignal Processing

IEEE Access, 2023
This paper presents a new extremely low-voltage low-power bulk-driven (BD) operational transconductance amplifier (OTA) realized for low frequency biosignal processing. The CMOS structure of the OTA utilizes bulk-driven and self-cascode techniques in the
Montree Kumngern, Tomasz Kulej, Fabian Khateb   +2 more
doaj   +1 more source

Identifications of Monolayer Molybdenum Disulfide Flakes for Transistor Devices

, 2013
This thesis covers useful methods for the identification of atomically thin molybdenum disulfide (MoS₂) flakes, outlines fabrication steps for transistors from identified monolayer MoS₂ samples, and details several potential measurements from such ...
Curley, Sheridan Sharer
core   +5 more sources

Poole–Frenkel (PF)-MOS: A Proposal for the Ultimate Scale of an MOS Transistor

, 2023
This work reports, for the first time, the phenomenon of lateral Poole–Frenkel current conduction along the dielectric/Si interface of a silicon nanowire metal-oxide semiconductor (MOS) transistor.
Kuniyuki Kakushima, Hei Wong, Wong, Hei, Kakushima, Kuniyuki   +3 more
core   +1 more source

A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor [PDF]

, 2020
In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5μm CMOS ...
Míguez, Matías, Gak Szollosy, Joel, Arnaud Maceira, Alfredo, Costa, Diego   +3 more
core   +1 more source

0.3-V 36-nW Voltage-Mode First-Order Filter Based on Multiple-Input Operational Transconductance Amplifier

IEEE Access
This paper presents an electronically tunable, voltage-mode first-order filter based on multiple-input operational transconductance amplifiers (MI-OTAs). The filter circuit consists of two MI-OTAs and a single capacitor.
Montree Kumngern, Tomasz Kulej, Fabian Khateb   +2 more
doaj   +1 more source

AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]

, 2011
Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al₂O₃ as a gate dielectric and surface
Wasige, E., S. Taking, E. Wasige, D. MacFarlane, MacFarlane, D., Taking, S.   +5 more
core   +1 more source

0.5 V Multiple-Input Fully Differential Operational Transconductance Amplifier and Its Application to a Fifth-Order Chebyshev Low-Pass Filter for Bio-Signal Processing

Sensors
This paper presents a multiple-input fully differential operational transconductance amplifier (MI-FD OTA) with very low power consumption. To obtain a differential MOS pair with minimum supply voltage and minimum power consumption, the multiple-input ...
Tomasz Kulej, Fabian Khateb, Montree Kumngern   +2 more
doaj   +1 more source

Laser‐Induced Graphene from Waste Almond Shells

Advanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova, Anna Chiara Bressi, Marina Galliani, Attilio Marino, Gianni Ciofani, Eduardo Machado‐Charry, Hilda Gomez Bernal, Alessandra Francini, Luca Sebastiani, Francesco Greco   +9 more
wiley   +1 more source

Low-Voltage Mixed-Mode Analog Filter Using Multiple-Input Multiple-Output Operational Transconductance Amplifiers

IEEE Access
This paper presents a novel mixed-mode, low-power, 1 V analog filter that uses multiple-input multiple-output operational transconductance amplifiers (MIMO-OTAs).
Montree Kumngern, Fabian Khateb, Tomasz Kulej   +2 more
doaj   +1 more source

Modelo do descasamento (Mismatch) entre transistores MOS: [tese] [PDF]

, 2008
Tese (Doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-graduação em Engenharia ElétricaDiversos modelos teóricos para o descasamento entre dispositivos na tecnologia MOS foram propostos desde a década de '80, sendo
Klimach, Hamilton
core