Results 251 to 260 of about 2,592,786 (293)
Some of the next articles are maybe not open access.
2011 IEEE International Symposium of Circuits and Systems (ISCAS), 2011
A new CMOS DC level shifter that can be programmed at a level less than the threshold voltage of a MOSFET is proposed. This design technique utilizes a bulk-driven MOSFET, which is biased with a constant reverse voltage, to shift the input. Furthermore since the proposed block is in a class-AB super source follower form, it is power-efficient.
Yasutaka Haga, Izzet Kale
openaire +1 more source
A new CMOS DC level shifter that can be programmed at a level less than the threshold voltage of a MOSFET is proposed. This design technique utilizes a bulk-driven MOSFET, which is biased with a constant reverse voltage, to shift the input. Furthermore since the proposed block is in a class-AB super source follower form, it is power-efficient.
Yasutaka Haga, Izzet Kale
openaire +1 more source
Bulk-viscosity-driven inflationary model
Physical Review D, 1986Bulk viscosity associated with the production of heavy particles during the grand-unified-theory phase transition can lead to exponential or ''generalized'' inflation. The condition of inflation proposed is independent of the details of the phase transition and remains unaltered in the presence of a cosmological constant.
, Waga, , Falcão, , Chanda
openaire +2 more sources
Comparison of gate-driven and bulk-driven current mirror topologies
2016 IEEE 19th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2016In this paper, different topologies of gate-driven and bulk-driven current mirrors designed in 90 nm CMOS technology are presented. Since the conventional MOS transistors can work as a bulk-driven device, there is no need for any modification of the existing MOSFET structure or technology process.
Matej Rakus +2 more
openaire +2 more sources
Surface-Driven Bulk Reorganization of Gold Nanorods
Nano Letters, 2005Molecular dynamic simulations are used to study the structural stability of gold nanorods upon heating. We show that the global stability of the rod is governed by the free energetics of its surface. In particular, an instability of surface facets nucleates a bulk instability that leads to both surface and bulk reorganization of the rod.
Wang, Yaping +2 more
openaire +2 more sources
Scaling the bulk-driven MOSFET
2009 International Conference on Microelectronics - ICM, 2009This paper investigates the impact of device scaling on the bulk-driven MOSFET. In particular, the behavior of g mb is observed across process technology and it is shown that the g mb /g m ratio falls from 0.38 to 0.12 between IBM's 0.25 μm and 65 nm bulk CMOS processes via simulation.
Christopher Urban +2 more
openaire +1 more source
Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS processes
Microelectronics Reliability, 2011Abstract This paper examines the implications of scaling an n -type bulk-driven MOSFET into the 90 nm node in an effort to make the device suitable for analog designs operating at 0.7 V, the minimum supply voltage predicted for the end of bulk CMOS. Observations will suggest that process scaling has caused the g mb / g m ratio to degrade from 0 ...
Christopher Urban +2 more
openaire +1 more source
Transconductance enhancement in bulk-driven input stages
2008 15th IEEE International Conference on Electronics, Circuits and Systems, 2008This paper presents two different circuit techniques which rely on partial positive feedback to enhance the effective transconductance of a CMOS bulk-driven input stage, thus leading to improved values for the DC gain and the gain-bandwidth product. The first approach modifies the conductance of the active load, while the second solution acts directly ...
Juan Manuel Carrillo +2 more
openaire +2 more sources
0.5‐V bulk‐driven differential amplifier
International Journal of Circuit Theory and Applications, 2012SUMMARYA new 0.5‐V fully differential amplifier is proposed in this article. The structure incorporates a differential bulk‐driven voltage follower with conventional gate‐driven amplification stages. The bulk‐driven voltage follower presents differential gain equal to unity while suppressing the input common‐mode voltage.
George Raikos, Spyridon Vlassis
openaire +2 more sources
0.8V bulk-driven variable gain amplifier
2010 17th IEEE International Conference on Electronics, Circuits and Systems, 2010A low-voltage variable gain amplifier based on PMOS bulk-driven input stage is presented in this paper. The gain of the proposed amplifier has a linear in-dB gain dependency since it utilizes the conventional pseudo exponential approximation function (1+x)/(1−x). The master-slave technique is used in order to control the voltage gain.
George Raikos, Spiridon Vlassis
openaire +1 more source
Bulk-driven differential voltage follower
Electronics Letters, 2009 A new differential voltage follower based on bulk-driven transistors is presented. The constant differential gain with value close to unity, input common-mode suppression and rail-to-rail operation are the most important advantages of the proposed structure.
S. Vlassis, G. Raikos
exaly +2 more sources