Results 111 to 120 of about 18,840,038 (173)

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology. [PDF]

Nanomaterials (Basel)
Radamson HH, Miao Y, Zhou Z, Wu Z, Kong Z, Gao J, Yang H, Ren Y, Zhang Y, Shi J, Xiang J, Cui H, Lu B, Li J, Liu J, Lin H, Xu H, Li M, Cao J, He C, Duan X, Zhao X, Su J, Du Y, Yu J, Wu Y, Jiang M, Liang D, Li B, Dong Y, Wang G.   +30 more
europepmc   +1 more source

Two-Dimensional Materials, the Ultimate Solution for Future Electronics and Very-Large-Scale Integrated Circuits. [PDF]

Nanomicro Lett
Qin L, Wang L.
europepmc   +1 more source

A Review of Tunnel Field-Effect Transistors: Materials, Structures, and Applications. [PDF]

Micromachines (Basel)
Chen S, An Y, Wang S, Liu H.
europepmc   +1 more source

New structure transistors for advanced technology node CMOS ICs. [PDF]

Natl Sci Rev
Zhang Q, Zhang Y, Luo Y, Yin H.
europepmc   +1 more source

High-density via RRAM cell with multi-level setting by current compliance circuits. [PDF]

Discov Nano
Hsieh YC, Lin YC, Huang YH, Chih YD, Chang J, Lin CJ, King YC.   +6 more
europepmc   +1 more source

Remote Plasma Selective Silicon Etching Enabled Tunable Sub-Fin Process for Improved Parasitic Bottom Channel Control in Gate-All-Around Nanosheet Field-Effect Transistors. [PDF]

Nanomaterials (Basel)
Li J, Gao Y, Zhang DW.
europepmc   +1 more source

Advancing 2D CMOS electronics with high-performance p-type transistors. [PDF]

Nat Commun
Jiang J, Zheng X, Liu Y, Li LJ, Xu L, Kong J, Peng LM.   +6 more
europepmc   +1 more source

Chern networks: reconciling fundamental physics and device engineering. [PDF]

Nat Commun
Gilbert MJ.
europepmc   +1 more source

Integrated 2D multi-fin field-effect transistors. [PDF]

Nat Commun
Yu M, Tan C, Yin Y, Tang J, Gao X, Liu H, Ding F, Peng H.   +7 more
europepmc   +1 more source

Semiconductor Nanomaterials for Optoelectronic Applications. [PDF]

Nanomaterials (Basel)
Lo I.
europepmc   +1 more source