Results 101 to 110 of about 19,628,440 (150)

The electrical characteristics of Nanosheet FET within the quasi-ballistic transport: Role of scattering and temperature variation. [PDF]

PLoS One
Shubham, Pandey RK.
europepmc   +1 more source

From Field Effect Transistors to Spin Qubits: Focus on Group IV Materials, Architectures and Fabrications. [PDF]

Nanomaterials (Basel)
Petkov N, Fagas G.
europepmc   +1 more source

Post-Moore two-dimensional integrated electronics for angstrom-nodes. [PDF]

Natl Sci Rev
Shen Z, Zheng Y, Peng F, Wang Y, Peng LM, Qiu C.   +5 more
europepmc   +1 more source

Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. [PDF]

Sci Rep
Severin B, Lennon DT, Camenzind LC, Vigneau F, Fedele F, Jirovec D, Ballabio A, Chrastina D, Isella G, de Kruijf M, Carballido MJ, Svab S, Kuhlmann AV, Geyer S, Froning FNM, Moon H, Osborne MA, Sejdinovic D, Katsaros G, Zumbühl DM, Briggs GAD, Ares N.   +21 more
europepmc   +2 more sources

High-voltage FinFET with floating poly and high-k material for enhanced intrinsic gain and safe operating area. [PDF]

Sci Rep
Oh K, Kim H, Kim Y, Yoo H, Choi M, Maeng W, Kim S, Lee HJ, Baek CK.   +8 more
europepmc   +1 more source

Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel. [PDF]

Micromachines (Basel)
Yugender P, Dhar RS, Nanda S, Kumar K, Sakthivel P, Thirumurugan A.   +5 more
europepmc   +1 more source

Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications. [PDF]

Micromachines (Basel)
Karimi K, Fardoost A, Javanmard M.
europepmc   +1 more source

Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal Effects. [PDF]

Nanomaterials (Basel)
Yugender P, Singh S, Kumar K, Dhar RS, Seteikin AY, Banerjee A, Samusev IG.   +6 more
europepmc   +1 more source

Dual-directional CIM-based non-volatile SRAM for instant-on/off energy-constrained edge AI devices. [PDF]

Sci Rep
Hemmasi SP, Moaiyeri MH, Eslami N, Ebrahimi B.   +3 more
europepmc   +1 more source

Remarkably High Effective Mobility of 301 cm²/V·s in 3 nm Ultra-Thin-Body SnO₂ Transistor by UV Annealing. [PDF]

Nanomaterials (Basel)
Shih AC, Zhan YH, Chin A.
europepmc   +1 more source