Results 121 to 130 of about 18,840,038 (173)
Recent progress on field-effect transistor-based biosensors: device perspective. [PDF]
Beilstein J NanotechnolSmaani B +7 more
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An energy efficient processor array and memory controller for accurate processing of convolutional neural network-based inference engines. [PDF]
Sci RepDeepika S, Arunachalam V.
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Recent advances in ferroelectric materials, devices, and in-memory computing applications. [PDF]
Nano ConvergHwang H, Youn S, Kim H.
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An Eight-Core 1.44-GHz RISC-V Vector Processor in 16-nm FinFET
IEEE Journal of Solid-State Circuits, 2022This work presents a RISC-V system-on-chip (SoC) with eight application cores containing programmable-precision vector accelerators. The SoC is built by using a generator-based design methodology, which enables the integration of open-source and project ...
Colin Schmidt +12 more
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2.2 A 5G Mobile Gaming-Centric SoC with High-Performance Thermal Management in 4nm FinFET
IEEE International Solid-State Circuits Conference, 2023In recent years, mobile gaming has grown rapidly to overtake both console and PC gaming markets globally. Thus far, modern smartphones have been powerful enough to support gaming requirements.
Bo-Jr Huang +15 more
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AEU - International Journal of Electronics and Communications, 2020
Abstract This paper investigates the digital performance of novel charge plasma based complementary (CPJL) FinFET inverters in terms of low and high noise margins, logic swing LS, DC power consumption PDC, rise tr and fall tf times, and propagations delay at both 10 and 7 nm technology nodes. In addition, their performance is compared with equivalent
Kallolini Banerjee, Abhijit Biswas
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Abstract This paper investigates the digital performance of novel charge plasma based complementary (CPJL) FinFET inverters in terms of low and high noise margins, logic swing LS, DC power consumption PDC, rise tr and fall tf times, and propagations delay at both 10 and 7 nm technology nodes. In addition, their performance is compared with equivalent
Kallolini Banerjee, Abhijit Biswas
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Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing
European Solid-State Circuits Conference, 2021This study presents the first in depth characterization of deep cryogenic electrical behavior of a commercial 16 nm CMOS FinFET technology. This technology is well suited for a broad range of applications, including quantum computing, quantum sensing ...
Hung-Chi Han +5 more
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1-Transistor 1-Source/Channel/Drain-Diode (1T1D) One-Time-Programmable Memory in 14-nm FinFET
IEEE Electron Device Letters, 2023We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programm- able (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-
E. Hsieh +8 more
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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022
A new advanced CMOS FinFET technology, Intel 4, is introduced that extends Moore’s law by offering 2X area scaling of the high performance logic library and greater than 20% performance gain at iso-power over Intel 7.
B. Sell +82 more
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A new advanced CMOS FinFET technology, Intel 4, is introduced that extends Moore’s law by offering 2X area scaling of the high performance logic library and greater than 20% performance gain at iso-power over Intel 7.
B. Sell +82 more
semanticscholar +1 more source