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Recent progress on field-effect transistor-based biosensors: device perspective. [PDF]

Beilstein J Nanotechnol
Smaani B, Nafa F, Benlatrech MS, Mahdi I, Akroum H, Walid Azizi M, Harrar K, Kanungo S.   +7 more
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Improved digital performance of charge plasma based junctionless C-FinFETs at 10 nm technology node and beyond

AEU - International Journal of Electronics and Communications, 2020
Abstract This paper investigates the digital performance of novel charge plasma based complementary (CPJL) FinFET inverters in terms of low and high noise margins, logic swing LS, DC power consumption PDC, rise tr and fall tf times, and propagations delay at both 10 and 7 nm technology nodes. In addition, their performance is compared with equivalent
Kallolini Banerjee, Abhijit Biswas
openaire   +1 more source

Effects of Fin Height on Digital Performance of Hybrid p-Si/n-InGaAs C-FinFETs at 25 nm Gate Length

2020
We report effects of Fin height on the logic application of hybrid complementary FinFETs (HC-Fins) composed of n-FinFETs and p-FinFETs employing InGaAs and Si channel, respectively, at gate length of 25 nm. Using extensive numerical analysis, we calculate rise time tr and fall time tf of NAND gate based inverter built with HC-Fins.
Kallolini Banerjee, Abhijit Biswas
openaire   +1 more source

Enhanced analog/RF performance of hybrid charge plasma based junctionless C-FinFET amplifiers at 10 nm technology node

Microelectronics Journal, 2023
Kallolini Banerjee, Abhijit Biswas
openaire   +1 more source

Analog and RF Performance Evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET

Silicon, 2021
Bhavya Kumar, Rishu Chaujar
exaly  

High Speed and Large Memory Window Ferroelectric HfZrO₂ FinFET for High-Density Nonvolatile Memory

IEEE Electron Device Letters, 2021
Siao-Cheng Yan, Chen-Han Wu, Yu-Hsien Lin   +2 more
exaly  

FinFET based SRAMs in Sub-10nm domain

Microelectronics Journal, 2021
Mahmood Uddin Mohammed, Liaquat Ali, Masud H Chowdhury   +2 more
exaly  

Key characterization factors of accurate power modeling for FinFET circuits

Science China Information Sciences, 2014
Xiaoxin Cui
exaly  

Performance evaluation of linearity and intermodulation distortion of nanoscale GaN-SOI FinFET for RFIC design

AEU - International Journal of Electronics and Communications, 2020
Ajay Kumar, Neha Gupta, Madan Mohan Tripathi   +2 more
exaly  

Flexible and Transparent Silicon‐on‐Polymer Based Sub‐20 nm Non‐planar 3D FinFET for Brain‐Architecture Inspired Computation

Advanced Materials, 2014
Hossain M Fahad, Rawan Ghanem
exaly