Results 101 to 110 of about 10,343 (214)
2.4 GHz CMOS Power Amplifier with Mode-Locking Structure to Enhance Gain
The Scientific World Journal, 2014 We propose a mode-locking method optimized for the cascode structure of an RF CMOS power amplifier. To maximize the advantage of the typical mode-locking method in the cascode structure, the input of the cross-coupled transistor is modified from that of ...
Changhyun Lee, Changkun Park
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High DC gain self‐cascode structure of OTA design with bandwidth enhancement
Electronics Letters, 2016 A high DC gain self‐cascode structure of operational transconductance amplifier (OTA) design with bandwidth enhancement is proposed. Based on the concept of self‐cascode structure, which provides high output resistance and transconductance, the proposed ...
Daiguo Xu, Lu Liu, Shiliu Xu
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Electronically Tunable Resistorless Mixed Mode Biquad Filters [PDF]
, 2013 This paper presents a new realization of elec¬tronically tunable mixed mode (including transadmittance- and voltage-modes) biquad filter with single input, three outputs or three inputs, single output using voltage differ-encing transconductance ...
Kacar, F., Yesil, A.
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Switching Behavior of Cascode GaN Under Influence of Gate Driver
CSEE Journal of Power and Energy SystemsWith high-frequency, low power dissipation and high-efficiency characteristics, Gallium nitride (GaN) power devices are of significant benefit in designing high-speed motor drives, as they improve performance and reduce weight.
Bin Luo, Guangzhao Luo, Sihai Li
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IEEE Open Journal of Power ElectronicsThe Si/SiC Cascode device has been widely accepted in various applications, however, its reliability issue still remains a major concern and needs to be extensively investigated.
Qiusheng Zhang, Hangzhi Liu, Yuming Zhou
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Pseudo-class-AB telescopic-cascode operational amplifier
Electronics Letters, 2004 A class-AB architecture for single-stage operational amplifiers is presented. The structure employs a switched-capacitor level shifter to apply the signal to both sink and source output transistors to create the class-AB behavior. Using this structure, the current mirror circuit of traditional class-AB structures can be eliminated.
M. Taherzadeh-Sani, R. Lotfi, O. Shoaei
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Progress with PXIE MEBT Chopper [PDF]
, 2013 A capability to provide a large variety of bunch patterns is crucial for the concept of the Project X serving MW-range beam to several experiments simultaneously.
/Fermilab +10 more
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Procedia Technology, 2016 AbstractThis paper presents the performance comparison of two Low Noise Amplifiers (LNA), a basic Cascode and a modified cascode LNA for IEEE 802.11b protocol, WLAN. A modified cascode LNA with dual Common source transistors is designed and the performance parameters are compared with a designed basic cascode stage.
Prameela, B., Daniel, Asha Elizabeth
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Experimental study on 5 MeV proton irradiation of enhancement-mode GaN HEMT devices
He jishuBackgroundGaN-based high electron mobility transistor (HEMT) has been widely used in satellite communication, space station and other fields due to its high thermal conductance, high breakdown voltage and radiation resistance. However, the existence of a
QIU Yiwu +3 more
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Design of Cryogenic SiGe Low-Noise Amplifiers [PDF]
, 2007 This paper describes a method for designing cryogenic silicon-germanium (SiGe) transistor low-noise amplifiers and reports record microwave noise temperature, i.e., 2 K, measured at the module connector interface with a 50-Ω generator.
Bardin, Joseph C. +2 more
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