Results 151 to 160 of about 6,570 (187)
Polycrystalline MAPbI<sub>3</sub> AC-bias direct x-ray detectors for 3D reconstruction. [PDF]
Sci AdvZhu Z +7 more
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Optically induced switching in CdZnTe [PDF]
IEEE Photonics Technology Letters, 2000 Summary form only given. Bulk CdTe has interesting optical properties around /spl lambda/=1.5 /spl mu/m, namely efficient photorefractivity and high electro-optic coefficient. The aim of this communication is to demonstrate that the activation time can be limited to the nanosecond range and long term polarization effects can be avoided by the use of a ...
Andrea Zappettini +4 more
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Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure
SPIE Proceedings, 1988The liquid phase epitaxial technique is used to grow Hgl_x Cdx Te (x = .23) from a Te - rich solution onto a Cdl_y ZnyTe (y = .04) buffer layer grown from a Te-rich solution onto a Cdi_yZnyTe bulk substrate in an open tube multibin horizontal slider apparatus.Growth conditions and physical characterizations of both the buffer layer and the CdHgTe layer
B Pelliciari +3 more
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2001
Abstract (Cd,Zn)Te single crystals fabricated in our laboratory by Vertical Gradient Freeze Method were subjected to two types of experiments. In the first experiment, samples were annealed at temperatures 600–900°C under different Cd overpressures. They were quenched after annealing to room temperature and Hall effect and conductivity measurements ...
L. Turjanska +5 more
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Abstract (Cd,Zn)Te single crystals fabricated in our laboratory by Vertical Gradient Freeze Method were subjected to two types of experiments. In the first experiment, samples were annealed at temperatures 600–900°C under different Cd overpressures. They were quenched after annealing to room temperature and Hall effect and conductivity measurements ...
L. Turjanska +5 more
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Homogeneity of CdZnTe detectors
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1998Abstract We describe the current state of nuclear radiation detectors produced from single crystals of Cd1−xZnxTe(CZT), with 0 ...
H Hermon +11 more
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Applied Physics Letters, 2001
The electrical properties of CdTe and Cd1−xZnxTe crystals grown under excess tellurium by a modified Bridgman technique are critically dependent on the zinc content. Below an x value of 0.07, the as-grown CdZnTe crystals are n type while, above this value, CdZnTe crystals are p type. The origin of the shallow donor level at 0.01 eV below the conduction
Muren Chu +5 more
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The electrical properties of CdTe and Cd1−xZnxTe crystals grown under excess tellurium by a modified Bridgman technique are critically dependent on the zinc content. Below an x value of 0.07, the as-grown CdZnTe crystals are n type while, above this value, CdZnTe crystals are p type. The origin of the shallow donor level at 0.01 eV below the conduction
Muren Chu +5 more
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Pixellated CdZnTe detector arrays
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994Abstract This paper reports the first high spatial resolution room-temperature semiconductor gamma detector arrays. Results of wafer-scale fabrication of 48 by 48 element CdZnTe (CZT) arrays with 125 μm element pitch are presented. Performance characteristics are presented, including pulse height spectra using charge-sensitive preamplifier readout ...
F.P. Doty +6 more
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Pixelated CdZnTe drift detectors
IEEE Transactions on Nuclear Science, 2005A technique, the so-called Drift Strip Method (DSM), for improving the CdZnTe detector energy response to hard X-rays and gamma-rays was applied as a pixel geometry. First tests have confirmed that this detector type provides excellent energy resolution and imaging performance. We specifically report on the performance of 3 mm thick prototype CZT drift
I. Kuvvetli, C. Budtz-Jorgensen
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Journal of Crystal Growth, 1999
The spectrometer characteristics of the room-temperature CdZnTe detectors, which were manufactured from the crystals grown by VPG, were determined. The energy resolution of the best samples were 6% (FWHM) for E γ = 59.6 keV and 5% (FWHM) for E γ = 662 keV.
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The spectrometer characteristics of the room-temperature CdZnTe detectors, which were manufactured from the crystals grown by VPG, were determined. The energy resolution of the best samples were 6% (FWHM) for E γ = 59.6 keV and 5% (FWHM) for E γ = 662 keV.
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Position-sensitive single carrier CdZnTe detectors
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1997Single polarity charge sensing on room temperature semiconductor gamma-ray detectors can be achieved by using the coplanar electrode readout technique. This method can eliminate the hole trapping problem of the wide bandgap semiconductors which are currently available. Previous results on 5 mm cube CZT detectors confirmed that the energy resolution can
Z. He +3 more
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