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Recent Advances in Ferrite‐Based Materials for Biomedical Applications: A Comprehensive Review

open access: yesAdvanced Materials, EarlyView.
Ferrite nanoplatforms are presented as tunable biomedical materials in which synthesis control, cation engineering, defect/morphology regulation, and surface functionalization govern structure–property–bioactivity relationships. These design strategies enable multifunctional applications including MRI contrast, magnetic hyperthermia, targeted drug ...
Pramod D. Mhase   +6 more
wiley   +1 more source
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Charge Trapping Non Volatile Memory

ECS Transactions, 2009
The memory market is currently being evolving towards innovative device concepts which include the use of new materials and/or new structures. In this scenario, charge trapping represents one the most promising revolutionary concept in the frame of nonvolatile memory. Charge trapping-based devices feature quantum wells instead of metallic floating gate
LORENZI, PAOLO   +4 more
openaire   +2 more sources

Study on charge trap layer in nanocrystal charge trap MOSFET

2006 IEEE Nanotechnology Materials and Devices Conference, 2006
In this study, we have investigated the performance two types of nonvolatile MOSFET devices in terms of the performance and reliability. Either SRO (Silicon Rich Oxide) or SRON (Silicon Rich OxyNitride) trap layer was used as a charge trap layer. The trap layers were deposited using ALD (Atomic Layer Deposition) method.
null Seung Su Cho   +3 more
openaire   +1 more source

Effect of trapped charge accumulation on the retention of charge trapping memory

Journal of Semiconductors, 2010
The accumulation process of trapped charges in a TANOS cell during P/E cycling is investigated via numerical simulation. The recombination process between trapped charges is an important issue on the retention of charge trapping memory. Our results show that accumulated trapped holes during P/E cycling can have an influence on retention, and the ...
Rui Jin   +4 more
openaire   +1 more source

Charge Trapping in Dielectrics

Microscopy and Microanalysis, 2004
When a dielectric is irradiated by electrons with energy E of several kiloelectron volts, a large number of processes take place: backscattering of incident electrons, excitation and ionization of the electrons in the dielectric with binding energies lower than E, creation of excitons, radiative and nonradiative decays of the excited and ionized ...
openaire   +2 more sources

Charge Trapping in SiO2

AIP Conference Proceedings, 1984
Avalanche injection techniques are extensively used to inject electrons and holes from silicon into the thin SiO2 layer of the type used in MOS transistors. This makes it possible to evaluate the electron and hole trapping kinetics in this material using only simple MOS devices.
openaire   +1 more source

Trapping a Charged Atom

ACS Nano, 2015
Engineering of supramolecular assemblies on surfaces is an emerging field of research impacting chemistry, electronics, and biology. Among supramolecular assemblies, metal-containing structures provide rich properties and enable robust nanostructured designs. In this issue of ACS Nano, Feng et al.
openaire   +2 more sources

Traps and Charges

EDFA Technical Articles, 2017
Abstract This article explains how oxide traps and mobile ions can lead to timing and function failures in ICs and provides insights and advice on how to identify and deal with potential problems.
openaire   +1 more source

Charge Trapping Sites in Spherulitic Polypropylene

Japanese Journal of Applied Physics, 1999
Charged areas of spherulitic polypropylene (PP) samples were visualized by a simple technique of attaching oppositely charged fine dye particles. A combination of this visualization technique and thermally stimulated current (TSC) spectroscopy was applied to identify the regions where shallow and deep charge traps exist densely in ...
K. Ikezaki, A. Yagishita, H. Yamanouchi
openaire   +1 more source

Detailed balance in single-charge traps

Physical Review B, 1993
We propose a model to explain recent experimental results concerning the charge trapping in a system of ultrasmall tunnel junctions. Degradation processes in the system are assumed to generate the strange single-electron jumps observed. The model predicts many spectacular features of charge trapping so that it can easily be verified.
Bauernschmitt, R., Nazarov, Yuli
openaire   +2 more sources

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