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Optical capacitance-voltage characterization of charge traps in the trapping nitride layer of charge trapped flash memory devices

Applied Physics Letters, 2007
Extracting the trap distribution in charge trapping layers of charge trap flash memory devices, an optical C-V method (OCVM) is proposed. Applying photons with λ=532nm to the oxide-nitride-oxide layer with 50∕60∕23Å in metal-oxide-nitride-oxide-semiconductor charge trap flash devices, the trap density in the charge trapping nitride layer is extracted ...
Jang Uk. Lee   +14 more
openaire   +1 more source

Trapped Charged Particles

2015
no ...
Knoop, Martina   +2 more
openaire   +2 more sources

Investigation of charge trap and loss characteristics for charge trap memory by electrostatic force microscopy

2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding, 2011
In this work, we employ the electrostatic force microscopy (EFM) technique to investigate the charge trapping and loss properties of Hf-based trapping structures by contact potential differences (CPDs) measurement. For different samples, the electron densities after injection and after 2 hours retention time are extracted from the measured CPDs.
Chenxin Zhu   +7 more
openaire   +1 more source

Charge Trapping in Polymers

Journal of The Electrochemical Society, 1973
D. K. Davies, P. J. Lock
openaire   +1 more source

Unraveling the Dynamics of Charge Trapping and De-Trapping in Ferroelectric FETs

IEEE Transactions on Electron Devices, 2022
Nilotpal Choudhury   +2 more
exaly  

Charge‐Carrier Trapping and Radiative Recombination in Metal Halide Perovskite Semiconductors

Advanced Functional Materials, 2020
Henry Snaith   +2 more
exaly  

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