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2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding, 2011
In this work, we employ the electrostatic force microscopy (EFM) technique to investigate the charge trapping and loss properties of Hf-based trapping structures by contact potential differences (CPDs) measurement. For different samples, the electron densities after injection and after 2 hours retention time are extracted from the measured CPDs.
Chenxin Zhu +7 more
openaire +1 more source
In this work, we employ the electrostatic force microscopy (EFM) technique to investigate the charge trapping and loss properties of Hf-based trapping structures by contact potential differences (CPDs) measurement. For different samples, the electron densities after injection and after 2 hours retention time are extracted from the measured CPDs.
Chenxin Zhu +7 more
openaire +1 more source
Overview of charge trapping memory devices—charge trapping layer engineering
2020Ammar Nayfeh, Nazek El-Atab
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Unraveling the Dynamics of Charge Trapping and De-Trapping in Ferroelectric FETs
IEEE Transactions on Electron Devices, 2022Nilotpal Choudhury, Ravi Tiwari, Kai Ni
exaly
Charge-trapping-blocking layer for enhanced triboelectric nanogenerators
Nano Energy, 2020Zhen Wen, Qingbao Guan, Xuhui Sun
exaly
Charge Trapping at the Dielectric of Organic Transistors Visualized in Real Time and Space
Advanced Materials, 2008Peter A Bobbert +2 more
exaly