Results 241 to 250 of about 217,231 (301)

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Unravelling the Secret of Sulfur Confinement and High Sulfur Utilization in Hybrid Sulfur‐Carbons

Advanced Materials, EarlyView.
Thermal condensation of inverse vulcanized sulfur‐carbon hybrids enables a bottom‐up sulfur confinement strategy, in which a protective carbon phase is progressively constructed around sulfur species. The resulting carbon nanodomains covalently tether sulfur chains and stabilize radical intermediates. This integrated architecture effectively suppresses
Tim Horner, Enis Oğuzhan Eren, Elif Begüm Yılmaz, Jiyong Kim, Ernesto Scoppola, Alexandros Vasileiadis, Nadezda V. Tarakina, Markus Antonietti, Paolo Giusto, Evgeny Senokos   +9 more
wiley   +1 more source

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Charge Trapping Non Volatile Memory

ECS Transactions, 2009
The memory market is currently being evolving towards innovative device concepts which include the use of new materials and/or new structures. In this scenario, charge trapping represents one the most promising revolutionary concept in the frame of nonvolatile memory. Charge trapping-based devices feature quantum wells instead of metallic floating gate
LORENZI, PAOLO, RAO, ROSARIO, PALMA, Fabrizio, G. Ghidini, IRRERA, Fernanda   +4 more
openaire   +2 more sources

Study on charge trap layer in nanocrystal charge trap MOSFET

2006 IEEE Nanotechnology Materials and Devices Conference, 2006
In this study, we have investigated the performance two types of nonvolatile MOSFET devices in terms of the performance and reliability. Either SRO (Silicon Rich Oxide) or SRON (Silicon Rich OxyNitride) trap layer was used as a charge trap layer. The trap layers were deposited using ALD (Atomic Layer Deposition) method.
null Seung Su Cho, null Kyong Hee Joo, null In-Seok Yeo, null IlSub Chung   +3 more
openaire   +1 more source

Charge Trapping in Dielectrics

Microscopy and Microanalysis, 2004
When a dielectric is irradiated by electrons with energy E of several kiloelectron volts, a large number of processes take place: backscattering of incident electrons, excitation and ionization of the electrons in the dielectric with binding energies lower than E, creation of excitons, radiative and nonradiative decays of the excited and ionized ...
openaire   +2 more sources

Trapping a Charged Atom

ACS Nano, 2015
Engineering of supramolecular assemblies on surfaces is an emerging field of research impacting chemistry, electronics, and biology. Among supramolecular assemblies, metal-containing structures provide rich properties and enable robust nanostructured designs. In this issue of ACS Nano, Feng et al.
openaire   +2 more sources

Induced-charge electroosmotic trapping of particles

Lab on a Chip, 2015
We present a novel position-controllable particle trapping method by the adjustable ICEO technique known as AC-flow field effect transistor.
Yukun, Ren, Weiyu, Liu, Yankai, Jia, Ye, Tao, Jinyou, Shao, Yucheng, Ding, Hongyuan, Jiang   +6 more
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Charge Trapping in SiO2

AIP Conference Proceedings, 1984
Avalanche injection techniques are extensively used to inject electrons and holes from silicon into the thin SiO2 layer of the type used in MOS transistors. This makes it possible to evaluate the electron and hole trapping kinetics in this material using only simple MOS devices.
openaire   +1 more source

Charge Trapping Sites in Spherulitic Polypropylene

Japanese Journal of Applied Physics, 1999
Charged areas of spherulitic polypropylene (PP) samples were visualized by a simple technique of attaching oppositely charged fine dye particles. A combination of this visualization technique and thermally stimulated current (TSC) spectroscopy was applied to identify the regions where shallow and deep charge traps exist densely in ...
K. Ikezaki, A. Yagishita, H. Yamanouchi
openaire   +1 more source

Detailed balance in single-charge traps

Physical Review B, 1993
We propose a model to explain recent experimental results concerning the charge trapping in a system of ultrasmall tunnel junctions. Degradation processes in the system are assumed to generate the strange single-electron jumps observed. The model predicts many spectacular features of charge trapping so that it can easily be verified.
Bauernschmitt, R., Nazarov, Yuli
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