Results 251 to 260 of about 217,231 (301)
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Charge trapping in corona-charge polyethylene films

Journal of Physics D: Applied Physics, 1980
A model for the process of surface potential decay of insulating films following charging by corona ions is developed. Account is taken of charge trapping and release at sites both in the surface and in the bulk where trapping can reduce the mobility significantly.
R Toomer, T J Lewis
openaire   +1 more source

Charge Trapping in Imidazolium Ionic Liquids

The Journal of Physical Chemistry B, 2009
Room-temperature ionic liquids (ILs) are a promising class of solvents for applications ranging from photovoltaics to solvent extractions. Some of these applications involve the exposure of the ILs to ionizing radiation, which stimulates interest in their radiation and photo- chemistry.
Ilya A, Shkrob, James F, Wishart
openaire   +2 more sources

Traps and Charges

EDFA Technical Articles, 2017
Abstract This article explains how oxide traps and mobile ions can lead to timing and function failures in ICs and provides insights and advice on how to identify and deal with potential problems.
openaire   +1 more source

Trapping Noise in Charge Coupled Devices

Physica Status Solidi (a), 1979
The interface trapping noise of surface channel charge coupled devices (SCCd's) is calculated numerically taking fully into account the non-stationary character of the charge transfer. The formula previously given for trapping noise takes into account only the emission of carriers from the traps.
K. Hess, J. F. Detry, C. T. Sah
openaire   +1 more source

Effect of trapped charge accumulation on the retention of charge trapping memory

Journal of Semiconductors, 2010
The accumulation process of trapped charges in a TANOS cell during P/E cycling is investigated via numerical simulation. The recombination process between trapped charges is an important issue on the retention of charge trapping memory. Our results show that accumulated trapped holes during P/E cycling can have an influence on retention, and the ...
Rui Jin   +4 more
openaire   +1 more source

Charge-Trapping-Type Flash Memory Device With Stacked High-$k$ Charge-Trapping Layer

IEEE Electron Device Letters, 2009
Operating properties of charge-trapping-type Flash memory devices with single or stacked structures on trapping layer are investigated in this letter. Improved operation and reliability characteristics can be achieved by adapting the stacked high-k films as charge-trapping layer due to the modification in the trap density and the energy level of traps,
null Ping-Hung Tsai   +7 more
openaire   +1 more source

Charge Mobility and Charge Traps in Conjugated Polymers

Macromolecular Rapid Communications, 2007
AbstractCharge mobility and charge traps are two important factors that affect performances of semiconductor devices. Here, the measurement techniques and correlation with polymer structures is reviewed. Common traps, such as oxygen, aggregates, long conjugation length subchains, and impurities are found to appear in conjugated polymers and their ...
Ching‐Yang Liu, Show‐An Chen
openaire   +1 more source

Instrumentation for charged particle traps

Review of Scientific Instruments, 1997
This article reports the design and its special features for various grid biases for a retarding potential analyzer instrument aboard Indian satellite SROSS-C2 to ensure trouble free functioning of electron and ion traps. The polarities of the various grid biases, identify the difference between ion traps and electron traps. A new concept of generating
S. S. Rajput, S. C. Garg
openaire   +1 more source

Trapped Charges on Dielectrics

Nature, 1964
IT has been proposed1 that the charge produced on a dielectric surface by electrical discharges is the result of trapping of electrons at impurity or defect sites in the material. Although numerous experiments on surface charges have been reported2,3 no direct evidence for a trapping process has been obtained.
openaire   +1 more source

Charge trapping in polymer diodes

Optical Materials, 1998
Abstract We report studies focusing on the nature of trap states present in single layer ITO/poly(phenylene vinylene)/Al light emitting diodes. At high applied bias the IV characteristics from 11 to 290 K can be successfully modelled by space charge limited current (SCLC) theory with an exponential trap distribution, giving a trap density H t of
Alasdair J. Campbell   +2 more
openaire   +1 more source

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