Results 1 to 10 of about 57,323 (293)

High-K dielectric sulfur-selenium alloys. [PDF]

Science Advances, 2019
Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers).
Ajayan, Pulickel M, Apte, Amey, Babu, Ganguli, Calderon, Hector A, Dai, Pengcheng, Hachtel, Jordan A, Hilario, Martin S, Idrobo, Juan Carlos, Jawdat, BenMaan I, Lerma, Albert, Li, Tong, Lou, Jun, Lupini, Andrew R, Owuor, Peter Samora, Puthirath, Anand B, Robles Hernandez, Francisco C, Susarla, Sandhya, Tam, David W, Tiwary, Chandra Sekhar, Tsafack, Thierry, Wei, Bingqing   +20 more
core   +6 more sources

Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics [PDF]

Nanoscale Research Letters, 2011
In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties ...
Lanza Mario, Iglesias Vanessa, Porti Marc, Nafria Montse, Aymerich Xavier   +4 more
doaj   +2 more sources

Performance optimization of InSe-FETs using high-k dielectric materials for analog/RF applications [PDF]

Scientific Reports
This study investigates the performance of Indium Selenide (InSe)-based field-effect transistors (FETs) incorporating high-k dielectric materials, using atomistic simulations based on the non-equilibrium Green’s function formalism.
Md Akram Ahmad, Muzaffar Imam, Bhubon Chandra Mech, V. Bharath Sreenivasulu   +3 more
doaj   +2 more sources

Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers

Journal of Telecommunications and Information Technology, 2023
The transition regions of GdSiO/SiOx and HfO2/SiOx interfaces have been studied with the high-k layers deposited on silicon substrates. The existence of transition regions was verified by medium energy ion scattering (MEIS) data and transmission ...
Olof Engström, Bahman Raeissi, Johan Piscator, Ivona Z. Mitrovic, Stephen Hall, Heinrich D. B. Gottlob, Mathias Szmidt, Paul K. Hurley, Karim Cherkaoui   +8 more
doaj   +3 more sources

The impact of multi-layered dielectrics on the electrical performance of ZnO thin-film transistors

Scientific African, 2023
The electrical performance of ZnO thin film transistors (TFTs) fabricated on three different dielectric layers is investigated using an inverted staggered bottom gate thin film transistor structure.
Divine Khan Ngwashi, Thomas Attia Mih
doaj   +1 more source

Review and perspective of high-k dielectrics on silicon

Journal of Telecommunications and Information Technology, 2023
The paper reviews recent work in the area of high-k dielectrics for application as the gate oxide in advanced MOSFETs. Following a review of relevant dielectric physics, we discuss challenges and issues relating to characterization of the dielectrics ...
Stephe Hall, Octavian Buiu, Ivona Z. Mitrovic, Yi Lu, William M. Davey   +4 more
doaj   +1 more source

Dielectric relaxation of high-k oxides [PDF]

Nanoscale Research Letters, 2013
Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion.
Zhao, Chun, Zhao, Ce, Werner, Matthew, Taylor, Steve, Chalker, Paul   +4 more
openaire   +2 more sources

Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectrics

Journal of Telecommunications and Information Technology, 2001
Numerical simulations of the gate leakage current in metal-insulator-semiconductor (MIS) structures based on the transfer matrix approach were carried out.
Tomasz Janik, Bogdan Majkusiak, Michał Korwin-Pawłowski   +2 more
doaj   +1 more source

Dual-Point Technique for Multi-Trap RTN Signal Extraction

IEEE Access, 2020
Random telegraph noise (RTN), as one dominant variation source in the ultra-scaled devices, has been attracting much more attention, and its analysis is of great importance to understand the fundamental physical mechanisms.
Xuepeng Zhan, Yifang Xi, Qianwen Wang, Weiqiang Zhang, Zhigang Ji, Jiezhi Chen   +5 more
doaj   +1 more source

Hf-based high-k dielectrics for p-Ge MOS gate stacks [PDF]

, 2013
The physical and electrical properties of the gate stack high-k/Al2O3/GeO2/p-Ge were studied in detail, where the high-k is either HfO2 or alloyed HfO2 (HfZrOy, HfGdOx, or HfAlOx).
Caymax, Matty, Eizenberg, Moshe, Fadida, Sivan, Lin, Dennis, Nyns, Laura, Palumbo, Félix Roberto Mario, Van Elshocht, Sven   +6 more
core   +1 more source