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Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers
Journal of Telecommunications and Information Technology, 2023 The transition regions of GdSiO/SiOx and HfO2/SiOx interfaces have been studied with the high-k layers deposited on silicon substrates. The existence of transition regions was verified by medium energy ion scattering (MEIS) data and transmission ...
Olof Engström +8 more
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The impact of multi-layered dielectrics on the electrical performance of ZnO thin-film transistors
Scientific African, 2023 The electrical performance of ZnO thin film transistors (TFTs) fabricated on three different dielectric layers is investigated using an inverted staggered bottom gate thin film transistor structure.
Divine Khan Ngwashi, Thomas Attia Mih
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Review and perspective of high-k dielectrics on silicon
Journal of Telecommunications and Information Technology, 2023 The paper reviews recent work in the area of high-k dielectrics for application as the gate oxide in advanced MOSFETs. Following a review of relevant dielectric physics, we discuss challenges and issues relating to characterization of the dielectrics ...
Stephe Hall +4 more
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Dielectric relaxation of high-k oxides [PDF]
Nanoscale Research Letters, 2013 Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion.
Zhao, Chun +4 more
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Journal of Telecommunications and Information Technology, 2001 Numerical simulations of the gate leakage current in metal-insulator-semiconductor (MIS) structures based on the transfer matrix approach were carried out.
Tomasz Janik +2 more
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Dual-Point Technique for Multi-Trap RTN Signal Extraction
IEEE Access, 2020 Random telegraph noise (RTN), as one dominant variation source in the ultra-scaled devices, has been attracting much more attention, and its analysis is of great importance to understand the fundamental physical mechanisms.
Xuepeng Zhan +5 more
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Peculiarities of the interface between high-permittivity dielectrics and semiconductors
Frontiers in Materials, 2014 Replacement of the silicon dioxide thin films in metal-oxide-semiconductor structures for microelectronics with high permittivity dielectrics (high-k) is a crucial step in the further down-scaling of microelectronic devices.
Nenad eNovkovski
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Results in Physics, 2022 This paper investigates the double dielectrics enhancement LDMOS (DDE LDMOS) with high-k field dielectric and low-k buried dielectric. The analytical models of the potential and electric field, optimal breakdown voltage and drift doping concentration are
Jiafei Yao +8 more
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High K Low Loss Dielectrics Co-Fireable with LTCC
Active and Passive Electronic Components, 2002 Rapid growth in the application of LTCC technology for RF wireless is clearly driven by the trend of miniaturization and mobile communication systems. This technology provides the possibility of integration of passive components in a cost effective way ...
Christina Modes +2 more
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IET Nanodielectrics, 2023 Recently, demands for high‐performance polymer film capacitors at elevated temperatures have become more urgent. High dielectric constant is essential for dielectric materials to achieve substantial energy density at relatively low electric fields, which
Sang Cheng +5 more
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