Results 31 to 40 of about 22,416,589 (293)

Resolving the High‐k Paradox in Organic Field‐Effect Transistors Through Rational Dielectric Design

Advanced Electronic Materials
Dielectric materials with high relative permittivity, i.e., high‐k dielectrics, are in great demand for application as gate dielectric for the development of field‐effect transistors operating at low voltages.
Beomjin Jeong, Kamal Asadi
doaj   +1 more source

Clinical Outcomes of SEEG‐Guided Radiofrequency Thermocoagulation in Children With Focal Drug‐Resistant Epilepsy: A Multicenter Real‐World Study

Annals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Objective Stereoelectroencephalography‐guided radiofrequency thermocoagulation (SEEG‐RFTC) has emerged as a safe and effective minimally invasive treatment for children with drug‐resistant focal epilepsy. Although evidence from real‐world studies remains limited, numerous pediatric cases have demonstrated promising outcomes. This retrospective
Weitao Chen, Stéphane Jean, Weihong Liu, Yihai Dai, Xinrong Fang, Xiaoqiang Wei, Shan Chen, Shiwei Song   +7 more
wiley   +1 more source

Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics

, 2004
Gate capacitance of metal-oxide-semiconductor devices with ultra-thin high-K gate-dielectric materials is calculated taking into account the penetration of wave functions into the gate-dielectric.
Haque, A., Hakim, M.M.A.
core   +1 more source

High mobility III-V MOSFETs for RF and digital applications [PDF]

, 2007
Developments over the last 15 years in the areas of materials and devices have finally delivered competitive III-V MOSFETs with high mobility channels. This paper briefly reviews the above developments, discusses properties of the GdGaO/Ga2O3 MOS systems,
Kalna, K., A. Zlotnicka, Moran, D.A.J., D. Macintyre, H. Zhou, O. Hartin, Asenov, A., Zlotnicka, A., Passlack, M., M. Tutt, X. Li, Y.-B. Park, K. Kalna, Droopad, R., Hartin, O., Fejes, P., J. Abrokwah, E. Johnson, Tutt, M., Abrokwah, J., S. Thoms, A. Asenov, Zurcher, P., Rajagopalan, K., Thoms, S., Park, Y-B, Macintyre, D., D.A.J. Moran, M. Passlack, K. Rajagopalan, Li, X., Thayne, I.G., Zhou, H., P. Fejes, P. Zurcher, I.G. Thayne, R. Droopad, Hill, R.J.W., R.J.W. Hill, Johnson, E.   +39 more
core   +1 more source

Mechanochemical Synthesis and Characterization of Nanostructured ErB4 and NdB4 Rare‐Earth Tetraborides

Advanced Engineering Materials, Volume 27, Issue 6, March 2025.
ErB4 and NdB4 nanostructured powders are produced by mechanochemical synthesis. 5 h mechanical alloying and 4 M HCl acid leaching are used in the production. ErB4 and NdB4 powders exhibit maximum magnetization of 0.4726 emu g−1 accompanied with an antiferromagnetic‐to‐paramagnetic phase transition at about TN = 18 K and 0.132 emu g−1 with a maximum at ...
Burçak Boztemur, Faruk Kaya, Bora Derin, Mustafa Lütfi Öveçoğlu, Ju Li, Duygu Ağaoğulları   +5 more
wiley   +1 more source

High mobility ZnO thin film transistors using the novel deposition of high-k dielectrics. [PDF]

, 2011
In order to investigate the performance of ZnO-based thin film transistors (ZnO-TFTs), we fabricate devices using amorphous hafnium dioxide (HfO2) high-k dielectrics.
S. Paul, Milanov, Andrian P., Devi, Anjana, D. K. Ngwashi, Anjana Devi, Andrian P. Milanov, Ngwashi, Divine K., Paul, Shashi, R. B. M. Cross, Cross, R. B. M.   +9 more
core   +1 more source

Enhanced capacitive energy storage of polyetherimide at high temperatures by integration of electrical insulation and thermal conductivity

Advanced Powder Materials
Polymer dielectrics possessing excellent electrical insulation and high thermal conductivity are pivotal for dielectric capacitors at elevated temperatures.
Xiaona Li, Hang Luo, Di Zhai, Yuting Wan, Guanghu He, Deng Hu, Hongshuai Hou, Dou Zhang, Shujun Zhang   +8 more
doaj   +1 more source

Atomic force microscopy data of novel high-k hydrocarbon films synthesized on Si wafers for gate dielectric applications

Data in Brief, 2020
This article presents data obtained from the atomic force microscopy (AFM) images of ultrathin high-k hydrocarbon (HC) films. The high-k HC films were synthesized on Si(100) wafers at various growth temperatures by using inductively-coupled plasma ...
Jihwan Kwon, Dong-Ok Kim, Sangyeob Lee, Eui-Tae Kim   +3 more
doaj   +1 more source

Air‐Pressure–Actuated Vibroacoustic Metamaterial With Tunable Bandgap: Design, Modeling, and Characterization

Advanced Engineering Materials, EarlyView.
This article presents the design, modeling, and characterization of air‐pressure–actuated programmable vibroacoustic metamaterials (PVAMM). The study focuses on leveraging air pressure to dynamically tune resonance frequencies for effective noise attenuation.
William Kaal, Michael M. Becker, Sarah C. L. Fischer   +2 more
wiley   +1 more source

Gate Capacitance of deep submicron MOSFETS with high-K gate dielectrics

, 2002
We study gate capacitance of deep submicron MOSFETs with high-K gate dielectrics. Schrödinger’s equation is solved by applying an open boundary condition at silicon-gate dielectric interface.
Haque, A, Hakim, MMA
core   +1 more source